Data Sheet Shottky barrier diode RB706D-40 Dimensions (Unit : mm) Applications Low current rectification Land size figure (Unit : mm) 2.90.2 Each lead has same dimension 0.4 0.1 0.05 Features 1) Small mold type. (SMD3) 2) Low IR 3) High reliability. 1.0MIN. 0.2 2.80.2 1.60.1 (2) (1) 0.95 0.80.1 0.95 0.30.6 00.1 Construction Silicon epitaxial planar 0.2 1.10.2 1.1 0.1 0.01 1.90.2 0.95 0.1 0.15 0.06 (3) 2.4 1.9 0.8MIN. SMD3 Structure ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59 week code Taping specifications(Unit : mm) 1.50.1 0 2.00.05 0.30.1 3.20.1 5.50.2 3.50.05 Limits 45 40 30 200 125 40 to 125 Symbol VRM VR Io IFSM Tj Tstg 00.5 3.20.1 Absolute maximum ratings(Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward voltage (*1) Forward current surge peak (60Hz1cyc) (*1) Junction temperature Storage temperature 1.05MIN 4.00.1 3.20.1 8.00.2 1.750.1 4.00.1 1.350.1 Unit V V mA mA C C (*1) Rating of per diode : lo/2 Electrical characteristics (Ta=25C) Parameter Forward voltage Reverse current Capacitance between terminals www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. Symbol VF1 IR1 Min. - Typ. - Max. 0.37 1 Unit V A Ct1 - 2.0 - pF 1/3 Conditions IF=1mA VR=10V VR=1V , f=1MHz 2011.03 - Rev.C Data Sheet RB706D-40 Ta=125 10 Ta=75 1 Ta=-25 0.1 Ta=25 Ta=75 10 Ta=25 1 0.1 Ta=-25 0.01 0.001 0.01 0 0 100 200 300 400 500 600 700 800 900 1000 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 0.1 30 0 280 270 260 0.8 0.6 0.5 0.4 0.3 AVE:0.083uA 0.2 0.1 Ta=25 f=1MHz VR=1V n=10pcs 8 7 6 5 4 AVE:2.00pF 3 2 1 0 0 VF DIPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 20 10 Ifsm 15 15 8.3ms 10 PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 20 8.3ms 8.3ms 1cyc 10 5 AVE:7.30A 30 9 0.7 AVE:267.4mV 20 10 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 290 10 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS Ta=25 VR=10V n=30pcs 0.9 250 5 9 Ifsm 8 t 7 6 5 4 3 2 1 0 0 1 IFSM DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.003 0.04 1000 100 Rth(j-c) Mounted on epoxy board 10 IM=1mA 1ms IF=10mA FORWARD POWER DISSIPATION:Pf(W) Rth(j-a) D=1/2 0.03 REVERSE POWER DISSIPATION:PR (W) PEAK SURGE FORWARD CURRENT:IFSM(A) 20 1 Ta=25 IF=1mA n=30pcs REVERSE CURRENT:IR(nA) FORWARD VOLTAGE:VF(mV) 10 1 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 300 TRANSIENT THAERMAL IMPEDANCE:Rth (/W) f=1MHz 100 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) 10 1000 100 Sin(180) 0.02 DC 0.01 0.002 D=1/2 DC 0.001 Sin(180) time 300us 1 0.001 0.00 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 0 0.00 0.01 0.02 0.03 0.04 AVERAGE RECTIFIED FORWARD CURRENT Io(A) Io-Pf CHARACTERISTICS 2/3 0.05 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 2011.03 - Rev.C Data Sheet RB706D-40 0.1 0.1 0A 0V 0.08 0.06 DC 0.04 D=1/2 0.02 Sin(180) Io t T VR D=t/T VR=20V Tj=125 Per chip AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Per chip 0A 0V 0.08 0.06 Io t DC T VR D=t/T VR=20V Tj=125 D=1/2 0.04 0.02 Sin(180) 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 125 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) 3/3 2011.03 - Rev.C Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. R1120A