AUIRGP4063D/E
www.irf.com © 2013 International Rectifier July 12, 2013
2
Thermal Resistance
Parameter Min. Typ. Max. Units
RJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.45 °C/W
RJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 0.92
RCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
RJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 80 –––
Notes:
VCC = 80% (VCES), VGE = 20V, L = 200μH, RG = 10.
This is only applied to TO-247AC package.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig
V(BR)CES
Col l ector -to- E mi tter B r eak down V ol tage
600——VV
GE = 0V, IC = 150μA
f
CT 6
V(BR)CES /
TJT emperature Coeff. of B reakdown Voltage —0.30—V/°CV
GE = 0V, IC = 1mA (25°C-175°C) CT 6
—1.61.9 I
C = 48A, VGE = 15V, TJ = 25°C 5,6 ,7
VCE(on) Collector-to-Emitter Saturation Voltage — 1.9 — V IC = 48A, VGE = 15V, TJ = 150°C 9,10,11
—2.0— I
C = 48A, VGE = 15V, TJ = 175°C
VGE (th ) Gate Threshold Voltage 4.0 — 6.5 V VCE = VGE , IC = 1.4mA 9, 10,
VGE ( t h ) /
TJ Threshold Voltage temp. coefficient — -21 —
VCE = VGE, IC = 1.0mA (25°C - 175°C) 11, 12
gfe Forward Transconductance — 32 — S VCE = 50V, IC = 48A, PW = 80μs
ICES Collector-to-Emitter Leakage Current — 1.0 150 μAV
GE = 0V, VCE = 600V
— 450 1000 VGE = 0V, VCE = 600V, TJ = 175°C
VFM Diode Forward Voltage Drop — 1.95 2.91 V IF = 48A 8
—1.45— I
F = 48A, TJ = 175°C
IGE S Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Ref.Fig
QgTotal Gate Charge (turn-on) — 95 140 IC = 48A 24
Qge Gate-to-Emitter Charge (turn-on) — 28 42 nC VGE = 15V CT 1
Qgc Gate-to-Collector Charge (turn-on) — 35 53 VCC = 400V
Eon Turn-On Switching Loss — 625 1141 IC = 48A, VCC = 400V, VGE = 15V CT 4
Eoff Turn-Off Switching Loss — 1275 1481 μJR
G = 10, L = 200μH, LS = 150nH, TJ = 25°C
Etotal Total Switching Loss — 1900 2622 E nergy los s es include tai l & dio de revers e recovery
td(on) Turn-On delay time — 60 78 IC = 48A, VCC = 400V, VGE = 15V CT 4
trRise time — 40 56 ns RG = 10, L = 200μH, LS = 150nH, TJ = 25°C
td(off) Turn-Off delay time — 145 176
tfFall time — 35 46
Eon Turn-On Switching Loss — 1625 — IC = 48A, VCC = 400V, VGE =15V 13 , 15
Eoff Turn-Off Switching Loss — 1585 — μJR
G=10, L=200μH, LS=150nH, TJ = 175°C
f
CT 4
Etotal Total Switching Loss — 3210 — E nergy los s es include tai l & dio de rever s e recovery
td(on) Turn-On delay time — 55 — IC = 48A, VCC = 400V, VGE = 15V 14 , 16
trRise time — 45 — ns RG = 10, L = 200μH, LS = 150nH CT 4
td(off) Turn-Off delay time — 165 — TJ = 175°C WF1
tfFall time — 45 — WF2
Cies Input Capacitance — 3025 — pF VGE = 0V 23
Coes Output Capacitance — 245 — VCC = 30V
Cres Reverse Transfer Capacitance — 90 — f = 1.0Mhz
TJ = 175°C, IC = 192A 4
RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp =600V CT 2
Rg = 10, VGE = +15V to 0V
SCSOA Short Circuit Safe Operating Area 5 — — μsV
CC = 400V, Vp =600V 22, CT 3
Rg = 10, VGE = +15V to 0V WF4
Erec Reverse Recovery Energy of the Diode — 845 — μJT
J = 175°C 17 , 18 , 19
trr Diode Reverse Recovery Time — 115 — ns VCC = 400V, IF = 48A 20, 21
Irr Peak Reverse Recovery Current — 40 — A VGE = 15V, Rg = 10, L =200μH, Ls = 150nH WF 3
Conditions