SIEMENS FEATURES Alternate Source to TLP621-2/-4 and TLP621GB-2/-4 Current Transfer Ratio (CTR) at I-r= 5 mA ILD/Q621: 50% Min. ILD/Q621GB: 100% Min. * Saturated Current Transfer Ratio (CTReaz) at I-F=1 mA ILD/Q621: 60% Typ. ILD/Q621GB: 30% Min. High Collector-Emitier Voltage, BVcEQ=70 V Dual and Quad Packages Feature: - Reduced Board Space - Lower Pin and Parts Count - Better Channel to Channel CTR Match - Improved Common Mode Rejection * Field-Effect Stable by TRIOS (TRansparent 1On Shield) * Isolation Test Voltage from Double Molded Package, 5300 VACrns Underwriters Lab File #E52744 VDE 0884 Available with Option 1 Maximum Ratings (Each Channel) Emitter Reverse VOItaGe 0... eeeeeeeeeeeeerteeeenneeeeeeeeenaeees 6V Forward Current oo... eeeceesseeeeenneeeeeeeeenneeeees 60 mA SUG CUrTONt oo... eeeeeeeeeeeeeneeeeenaeeeeeneeeeneeees 15A Power Dissipation............:ceesceesseeesneeeeees 100 mw Derate from 25C oe eeeeeceettteeeeeeereeiees 1.33 mwrc Detector Collector-Emitter Reverse Voltage .............. 70V Collector Current 0.0... ee eeeseeeeeeeeeeeeeesnreeeeees 50 mA Collector Current (t <1 MS)... eee 100 mA Power Dissipation............:ceesceesseeesneeeeees 150 mw Derate from 25C oe eceeeceeeeeeeeeeneeeneeeens 2 mW Package Isolation Test Voltage (t=1 SOC.) oo eececeeeseeeecsetseereetnernees 7500 VACpx (t= 1 MIN.) oe eect eee eeteeene teens 5300 VACams Package Dissipation ILD620/GB............... 400 mW Derate frOM 25C 0... eeeee teeter 5.33 mW/C Package Dissipation ILQ620/GB .............. 500 mW Derate from 25C 0... eeeeeeeeeeeeeee 6.67 mW/C ClECD AGS 0. eeeeeecesneeeeeneeeeenaeereneeeeeeeeee 7mm min. CIOAPANCE eee eeeeeeeeeeeneeeeeneeeeseeeeeeeeeee 7 min min. Isolation Resistance Vig=500 V, Ta=25C veccecsecsesseessesseesesseeees 2101 a Vig=500 V, Ta= 100C voecceeccsseesesseesesseeees >10'T a Storage Temperature... 65C to + 150C Operating Temperature.............. 55C to + 100C Junction Temperature... eeceesseeeeeeeeseeeeees 100C Soldering Temperature (2 mm from case bottom)... eee 260C DUAL CHANNEL ILD621/621GB QUAD CHANNEL ILQ621/621GB MULTI-CHANNEL PHOTOTRANSISTOR OPTOCOUPLER Dimensions in inches (mm) wi] fie sel fia en'e q 268 (6.81) Anode Li 8 J Emitt 288 6.40) node nee miter Cathode E& [7] Collector ts] eS tz] Igo Cathode ork Ke .390 (9.91) ~~ / 379 (0.63) Anode Cf 5] Emitter el e045 (1.14) .305 typ. .030 (.76) (7.75) typ. T f | a | | | J} 450 (3.81) f I iT 199 6.90) \ I IF I te 13.82) 4 40 fF 040 (1.02) | Typ. ~~] 030 (.76 ) Typ. 022 (.56 L388" a4 __t 018 (.46 .012 (.30)_,| (48) .100 (2.54) ~ .008 (.20) Ve Typ. cy rh aia rh ny ie rata rh Pin One |.D. Anode oy Ee Emitter / Cathode GI 15) Collector q Cathode BJ [14] Collector 268 (6.81 E KI 255 (6.48 Anode GT ~.. T3) Emitter Anode ery 2] Emitter TUES TS] omen ce -790 (20.07) Cathode LZ 10] Collector 779 (19.77 ) athode Cra KE Anode & [3] Emitter eo} e045 (1.14) .305 typ. .080 (.76) (7.75) typ. qT ls] || || | asd 381) { -130 (3.30) \ .135 (3.43) 4+ 445 (2.92) F.040 (1.02) wo | 080 (76) TYP. Sap o2 (90) Pa .008 (.20) | t 4 Typ. 022 (56 018 (aor DESCRIPTION The ILD/Q621 and ILD/Q621GB are multi-channel phototransistor optocou- plers that use GaAs IRLED emitters and high gain NPN silicon phototransis- tors. These devices are constructed using over/under leadframe optical coupling and double molded insulation technology. This assembly process offers a withstand test voltage of 7500 VDC. The ILD/Q621GB is well suited for CMOS interfacing given the CTReggat of 30% minimum at Ip of 1 mA. High gain linear operation is guaranteed by a minimum CTRe of 100% at 5 mA. The ILD/Q621 has a guaranteed CTRe of 50% minimum at 5 mA. The TRansparent |On Shield insures stable DC gain in applications such as power supply feedback circuits, where constant DC Vio voltages are present.Characteristics Symbol Min. Typ. Max. Unit Condition Emitter Forward Voltage Ve 1 1.15 1.3 Vv |-=10 mA Reverse Current IR 0.01 10 HA VpR=6 V Capacitance Co 40 pF V-=0 V, f=1 MHz Thermal Resistance, Junction to Lead RH 750 C/W Detector Capacitance Coe 6.8 pF Vog=5 V, f= 1 MHz Collector-Emitter Leakage Current IcEO 10 100 nA Vop=24V Collector-Emitter Leakage Current IcEO 2 50 HA Ta=85C, Vop=24 V Thermal Resistance, Junction to Lead RH 500 C/W Package Transfer Characteristics Channel/Channel CTR Match CTRX/CTRY 1to1 3 to 1 Ilp=5 mA, Vop=5 V ILD/Q621 Saturated Current Transfer Ratio CTReesat 60 % lp=1 mA, Veg=0.4 V Current Transfer Ratio CTRee 50 80 600 % l-=5 mA, Vog=5 V Collector-Emitter Saturation Voltage VoEsat 0.4 Vv [p=8 mA, Icg=2.4 mA ILD/Q621GB Saturated Current Transfer Ratio CTReesat 30 % lp=1 mA, Veg=0.4 V en Transfer Ratio (Collector-Emit- CTRee 100 200 600 % l-=5 mA, Vog=5 V ter Collector-Emitter Saturation Voltage VoEsat 0.4 Vv lp=8 mA, Icg=0.2 mA Isolation and Insulation Common Mode Rejection, Output High | CMH 5000 Vius Vom=50 Vp_p, R_=1 kQ, =O mA Common Mode Rejection, Output Low CML 5000 Vius Vowr80 Vpp, R_=1 kQ, I-=10 m Common Mode Coupling Capacitance Com 0.01 pF Package Capacitance Cl-O 0.8 pF Vio=0 V, f=1 MHz Insulation Resistance Rg 10' Q Vi9o=500 V, Ta=25C Channel to Channel Insulation 500 VAC Switching Times Figure 1. Non-saturated switching timing Figure 2. Non-saturated switching timing lp Voc=5 V I=10 MAY A Vo F=10 KHz, R,.=75 Q _ DF=50 % ~ toy - Characteristic Symbol Typ. Unit Test VoL tpiy 1 Condition ts \ On Time Ton 3.0 us lp=+10 mA 50% Rise Time tr 20 ps Voec=5 V Off Time torr 2.3 us R= 75Q ofa te to tr Fall Time te 2.0 us 50% of Vpp Propagation H-L tee 1.1 us Propagation L-H teLH 2.5 us ILD/Q621/GBFigure 3. Saturated switching timing Figure 6. Maximum LED power dissipation 200 IF LC = L E 150F 5 L tp 5 L e L ta 100 F N Vo _ aA ) tPLH JF fm 50 FE Ni _ VaH=1.5/V oO L eel toy, bk-to+t tp | 0 C4 1 1 1 1 1 1 1 -60 -40 -200 0 20 40 60 80 100 Ta - Ambient Temperature - C Figure 4. Saturated switching timing F=10 KHz, Voc=5 V Figure 7. Forward voltage versus forward current DF=50% 1.4 RL > 1.3 a = -55C rae Vo o m 1.2 I-10 mA = Ta = 25C o (1.1 = > Bz 1.0 3 Characteristic Symbol Typ. Unit Test 5 0.9 Condition rig ' 0.8 On Time Ton 43 us [=+10 mA S 07 Rise Time tr 2.8 us Voo=5 V 1 1 10 100 IF - Forward Current - mA Off Time torr 25 us R.=1 Q Fall Time te 1 us VyH=1.5 V Figure 8. Collector-emitter current versus temperature Propagation H-L tee 2.6 us and LED current Propagation L-H teLH 7.2 us 35 <q rs 30 Figure 5. Maximum LED current versus ambient = 25 temperature 2 20 3 < 120 o 15 E a 1 100 = 40 e L 2 o = 5 80 8 3 FE 1 9 ty 5 go 40 20. 380 40~450 60 2 oF TJ (MAX)= 100C \ E 40 . IF- LED Current-mA EF \ 20 = _ LL 0 1 1 1 1 1 1 1 1 ~ 60 -40 -20 0 20 40 60 80 100 Ta - Ambient Temperature - C ILD/Q621/GBFigure 9. Collector-emitter leakage versus temperature Figure 13. Normalization factor for non-saturated and saturated CTR T,=50C versus If 5 < 10 2.0 10 4 : Normalized to: | _ f Voe = 10V; IF = 5mA, Ta = 25C LO f= 10 8 15 CTRee(sat) Vce = 0.4V wi | & 102 = 2 2 NCTRoef 3 10! 10 2 6 E oN 10 2 r NCTRee(sat) 1 uw 0.5 1071 z= r oO Ta = 50C 3 5 a 1020 0 20 40 60 80 100 0.0 | ey 40 +00 Ta- Ambient Temperature - C IF - LED Current - mA Figure 10. Propagation delay versus collector load Figure 14. Normalization factor for non-saturated and resistor saturated CTR T,=70C versus lf = 4000 3 2.0 ' EF Ta= 25C, IF = 425 1 r Normalized to: ~ rE 10mA 7 > 5 F&F Vee = 10V, IF = 5mA, Ta = 25C a b Vec=5V,Vth=15 Ze < 2, 5 [ CTRee(sat) Vee = 0.4V Lo a Vv 4 2 1.5} 5 100 E ra 120 5 6 & rc 1 3 By NCTRce / a r 7 E So & 10-7 115 8 : Linea : Fo tpLH ; : 0-5 a C : = 5 ZA Ta =70C a 1., 2 1 Bo a ba eee 1.0 _ - 4 1 10 100 1 10 100 RL - Collector Load Resistor - KQ IF - LED Current - mA Figure 11. Maximum detector power dissipation Figure 15. Normalization factor for non-saturated and 200 saturated CTR T,=100C versus If 2.0 z r Normalized to: Vce = 10V, IF = 5mA, Ta = 25C 2 150 5, 5[ CT Ree(sat) Vee = 0.4V o ol. 5 \ et oa ce fT 5B 100 \ 3, of 8 \ ar NCTRce & a S 50 N OS Zo im zh A NCTRee(sat) a 5 | a Ta = 100C 0 i 60 -40 -20 0 2 40 60 80 100 0.0 2 tt 2 Ta - Ambient Temperature - C 4 | 10 100 IF - LED Current - mA Figure 12. Maximum collector current versus collector voltage Figure 16. Peak LED current versus pulse duration, Tau 4000 40000 Se Duty Factor < i | = 100 .005 E = 1000 f t >} 2 o .02 S 5 5 10 o ft 6 a Pe Ww 2 Beercovsay 2 = ma i 100f 5 =e o 1 a o on ' x g $ 4 10 a 1 10 100 wo 10? 0% 0% Jo% to! 10% 401 Vce - Collector-Emitter Voltage - V t- LED Pulse Duration - s ILD/Q621/GB 5-4