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FDS86242 N-Channel PowerTrench(R) MOSFET 150 V, 4.1 A, 67 m Features General Description Max rDS(on) = 67 m at VGS = 10 V, ID = 4.1 A This N-Channel MOSFET is produced using Fairchild Semiconductor`s advanced Power Trench(R) process that has Max rDS(on) = 98 m at VGS = 6 V, ID = 3.3 A been optimized for rDS(on), switching performance and High performance trench technology for extremely low rDS(on) ruggedness. High power and current handling capability in a widely used surface mount package Applications DC/DC converters and Off-Line UPS 100% UIL Tested Distributed Power Architectures and VRMs RoHS Compliant Primary Switch for 24V and 48V Systems High Voltage Synchronous Rectifier D D D D G D 5 4 D 6 3 S D 7 2 S D 8 1 S G SO-8 S S Pin 1 S MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol VDS Drain to Source Voltage Ratings 150 Units V VGS Gate to Source Voltage 20 V Drain Current -Continuous 4.1 ID Parameter -Pulsed 20 Single Pulse Avalanche Energy EAS PD TJ, TSTG (Note 3) 40 Power Dissipation TC = 25 C (Note 1) 5.0 Power Dissipation TA = 25 C (Note 1a) 2.5 Operating and Storage Junction Temperature Range -55 to +150 A mJ W C Thermal Characteristics RJC Thermal Resistance, Junction to Case RJA Thermal Resistance, Junction to Ambient (Note 1) 25 (Note 1a) 50 C/W Package Marking and Ordering Information Device Marking FDS86242 Device FDS86242 (c)2010 Fairchild Semiconductor Corporation FDS86242 Rev. C Package SO-8 1 Reel Size 13 '' Tape Width 12 mm Quantity 2500 units www.fairchildsemi.com FDS86242 N-Channel PowerTrench(R) MOSFET August 2010 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 A, VGS = 0 V BVDSS TJ Breakdown Voltage Temperatur Coefficient ID = 250 A, referenced to 25 C IDSS Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V 1 A IGSS Gate to Source Leakage Current VGS = 20 V, VDS = 0 V 100 nA 4 V 150 V 104 mV/C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 A VGS(th) TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 A, referenced to 25 C -10 VGS = 10 V, ID = 4.1 A 56.3 rDS(on) Static Drain to Source On Resistance VGS = 6 V, ID = 3.3 A 73.8 98 VGS = 10 V, ID = 4.1 A, TJ = 125 C 107 126 gFS Forward Transconductance 2 VDS = 10 V, ID = 4.1 A 3.5 mV/C 67 11 m S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 75 V, VGS = 0 V, f = 1MHz 570 760 pF 64 85 pF 2.9 5 pF 0.5 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time VDD = 75 V, ID = 4.1 A, VGS = 10 V, RGEN = 6 Qg(TOT) Total Gate Charge VGS = 0 V to 10 V Qg(TOT) Total Gate Charge VGS = 0 V to 5 V Qgs Gate to Source Charge Qgd Gate to Drain "Miller" Charge VDD = 75 V, ID = 4.1 A 7.9 16 ns 1.5 10 ns 13 23 ns 2.8 10 ns 8.9 13 nC 4.9 7 nC 3.0 nC 2.0 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 4.1 A (Note 2) 0.81 1.3 VGS = 0 V, IS = 2 A (Note 2) 0.77 1.2 IF = 4.1 A, di/dt = 100 A/s V 61 98 ns 71 114 nC NOTES: 1. RJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. b) 125 C/W when mounted on a minimum pad. a) 50 C/W when mounted on a 1 in2 pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3. Starting TJ = 25 C, L = 1 mH, IAS = 9 A, VDD = 135 V, VGS = 10 V. (c)2010 Fairchild Semiconductor Corporation FDS86242 Rev. C 2 www.fairchildsemi.com FDS86242 N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted 20 5 ID, DRAIN CURRENT (A) VGS = 7 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V VGS = 6 V 15 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 10 VGS = 5.5 V 5 VGS = 5 V 0 0 1 2 3 4 VGS = 5 V 4 VGS = 6 V 3 2 VGS = 7 V 1 0 5 0 5 2.0 rDS(on), DRAIN TO 1.8 1.6 1.4 1.2 1.0 0.8 0.6 SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 300 ID = 4.1 A VGS = 10 V 20 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 250 ID = 4.1 A 200 150 TJ = 125 oC 100 TJ = 25 oC 50 0 4 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 20 IS, REVERSE DRAIN CURRENT (A) 30 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) 15 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.4 -50 10 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics 0.4 -75 VGS = 10 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VDS, DRAIN TO SOURCE VOLTAGE (V) 2.2 VGS = 5.5 V 15 VDS = 5 V 10 TJ = 25 oC TJ = 150 oC 5 TJ = -55 oC 0 2 3 4 5 6 10 TJ = 150 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 7 VGS = 0 V 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current (c)2010 Fairchild Semiconductor Corporation FDS86242 Rev. C 3 1.2 www.fairchildsemi.com FDS86242 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 1000 ID = 4.1 A Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 75 V VDD = 50 V 6 VDD = 100 V 4 100 Coss Crss 10 2 f = 1 MHz VGS = 0 V 0 0 2 4 6 8 1 0.1 10 1 Figure 7. Gate Charge Characteristics 5 20 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 100 Figure 8. Capacitance vs Drain to Source Voltage 30 TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 4 3 VGS = 10 V 2 VGS = 6 V 1 o RJA = 50 C/W 1 0.001 0.01 0.1 1 0 25 10 50 100us 1 1 ms P(PK), PEAK TRANSIENT POWER (W) 10 10 ms 100 ms SINGLE PULSE TJ = MAX RATED RJA = 125 C/W 1s 10 s TA = 25 oC DC o 0.01 0.001 0.01 0.1 1 10 100 800 VDS, DRAIN to SOURCE VOLTAGE (V) 150 2000 1000 100 10 SINGLE PULSE RJA = 125 oC/W 1 0.5 -4 10 TA = 25 oC -3 10 -2 10 -1 10 1 100 10 1000 t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area (c)2010 Fairchild Semiconductor Corporation FDS86242 Rev. C 125 Figure 10. Maximum Continuous Drain Current vs Ambient Temperature THIS AREA IS LIMITED BY rDS(on) 0.1 100 o Figure 9. Unclamped Inductive Switching Capability 100 75 TC, Ambient TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDS86242 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA o RJA = 125 C/W 0.001 0.0005 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve (c)2010 Fairchild Semiconductor Corporation FDS86242 Rev. C 5 www.fairchildsemi.com FDS86242 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I48 (c)2010 Fairchild Semiconductor Corporation FDS86242 Rev. C 6 www.fairchildsemi.com FDS86242 N-Channel PowerTrench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Power-SPMTM AccuPowerTM F-PFSTM (R)* PowerTrench(R) Auto-SPMTM FRFET(R) SM Global Power Resource PowerXSTM Build it NowTM The Power Franchise(R) (R) Programmable Active DroopTM Green FPSTM CorePLUSTM QFET(R) Green FPSTM e-SeriesTM CorePOWERTM GmaxTM QSTM CROSSVOLTTM TinyBoostTM GTOTM Quiet SeriesTM CTLTM TinyBuckTM IntelliMAXTM RapidConfigureTM Current Transfer LogicTM TinyCalcTM ISOPLANARTM DEUXPEED(R) TM TinyLogic(R) MegaBuckTM Dual CoolTM TINYOPTOTM (R) MICROCOUPLERTM Saving our world, 1mW/W/kW at a timeTM EcoSPARK TinyPowerTM EfficentMaxTM MicroFETTM SignalWiseTM TinyPWMTM ESBCTM MicroPakTM SmartMaxTM TinyWireTM MicroPak2TM SMART STARTTM (R) TriFault DetectTM MillerDriveTM SPM(R) TRUECURRENTTM* (R) STEALTHTM MotionMaxTM Fairchild SerDesTM (R) SuperFETTM Motion-SPMTM Fairchild Semiconductor SuperSOTTM-3 OptiHiTTM FACT Quiet SeriesTM SuperSOTTM-6 OPTOLOGIC(R) FACT(R) UHC(R) (R) OPTOPLANAR(R) SuperSOTTM-8 FAST (R) Ultra FRFETTM SupreMOSTM FastvCoreTM UniFETTM SyncFETTM FETBenchTM VCXTM Sync-LockTM FlashWriter(R) * PDP SPMTM VisualMaxTM FPSTM XSTM ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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