NEC / NPN SILICON POWER TRANSISTOR 2SD882 DESCRIPTION The 2SD882 is NPN silicon transistor suited for the output stage of 3 watts audio amplifier, voltage regulator, DC-DC con- verter and relay driver. FEATURES @ Low saturation voltage. Veet) 0.5 V (@ 1c =2 A, Ig = 0.2 A) Excellent hee linearity and high hre. hee : GO to 400 (@ Voge = 2 V, Io =1 A) @ Less cramping space. required due to small and thin package and reducing the trouble for attachment to a radiator. No insulator bushing required. ABSOLUTE MAXIMUM RATINGS Maximum Temperatures Storage Temperature ..........--. 55 to +150 C Junction Temperature ........... 150 C Maximum Maximum Power Dissipations Total Power Dissipation (Tg= 25C) ......... 1.0W Total Power Dissipation (Te = 25C) ....... "...10W Maximum Voltages and Currents (Tg = 25 C) Vcso Collector to Base Voltage ....... 40 V Vceo Collector to Emitter Voltage..... 30 V Vespo Emitter to Base Voltage ........ 5.0 V Icipc) Collector Current (D.C) ........ 3.0 A Iciputse) Collector Current (pulse) .....-. 7.0 A *Pulse Test PW S 350 us, Duty Cycle S2 % ELECTRICAL CHARACTERISTICS (Ta = 25 C) PACKAGE DIMENSIONS in millimeters (inches) 8.5 MAX. (0.334 MAX) $3.2 20.2( 60.126) | 2.8 MAX. (0.110 MAX.) 3.840.2 (0.149) np a Ww Lo MAX. (0.472 MAX.) (0.512 MIN.) +0.08 0.823:38 (0.031) 2.3/2.3 (0.090)] (0.090) 1. Emitter 2. Collector connected to mounting plane 3. Base SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNIT TEST CONDITIONS hee1 DC Current Gain 30 150 VcE = 2.0 V, Ic = 20 mA** hee? DC Current Gain 60 160 400 Vce = 2.0 V, Ic = 1.0 A** fr Gain Bandwidth Product 90 MHz VcE=5.0V, IC =01A Cob Output Capacitance 45 pF Veg =10V, 1g =0,f=1.0 MHz 'cBo _ Collector Cutoff Current 1.0 HA Vcp= 30V,le=0 lego Emitter Cutoff Current 1.0 uA Veg =3.0V, Io= 0 VcE(sat) ~ Collector Saturation Voltage 0.3 0.5 v Ic = 2.0 A, lg = 0.2 A** VBE(sat) Base Saturation Voltage 1.0 2.0 v I = 2.0 A, Ip = 0.2 A** **Pulse Test : PW S350 ys, Duty Cycle 22 % Classification of hee Rank R Q P a Range 60 to 120 | 100 to 200 | 160 to 320 | 200 to 400 Test Conditions : Vcg = 2.0 V, Ic =1.0A 432 NEC 2SD882 Base Saturation VoltageV VBE(sat) Collector Saturation VoltageV TYPICAL CHARACTERISTICS (Tg = 25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE = NOTE | 1. Aluminum heat sink 10 of 10 mm thickness. = 2. With no insulator film. a 3. With silicon compound. 3 8 2 4 5 5, 6 Ge, oO a4 (00 . 3 Poe Ne NE 2 2 oe 0 50 100 150 Tz ~Ambient TemperatureC SAFE OPERATING AREAS pulse) MAX. S10 ms Ss Me | -| Pans 2. Ly w 2, &, Se) o A Collector CurrentA NOTE 1. Te =25 C 2. Curves must be derated linearly with increase ot temperature and Duty Cycle. o!lc Oo 1 VoeCollector to Emitter VoltageV BASE AND COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT ' jo=10-1B 3 Pulse Test i 0 0 0. 0 0. 0 s S& 0001 0.003 003 0.1 03 1 10 & Ic Collector Current A DERATING CURVES FOR ALL TYPES & a I t c | ' 100 5 = 80l- ~S% |. 2 i Ling, if = i bey ,' oS i leg. ro ' Q. ~ 60 +N i oe oD CG, oo 40 2 g By | 5 pe a Sy 2 20}- Q a i 5 oO 50 100 150 T,Case Temperature"C COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE Pulse Test e - we 2 & Callector Current -A S Ip=1 mA 0 4 8 12 16 20 Voe- Collector to Emitter Voitage-V GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT VcoeE=5.0 V Forced air cooling (with heat sink} aw Oo - oa e o w - f>Gain Bandwidth Product -MHz o 2 I Collector Current -~A CibInput CapacitancepF THERMAL RESISTANCE vs. PULSE WIOTH Voe=10 Vv Ic=lOA Duty=0.001 w _ 4Rif Thermal Resistance~C/W o w& = 3 1 PW Pulse Widthms DC CURRENT GAIN, BASE TO EMITTER VOLTAGE vs. COLLECTOR CURRENT Vce=2.0V] 7 Pulse Test o & < 8 Oo 3, g = 60 3 5 = c & o 81 1 * | a 6 6 w @ a = 3 | Ww ix 1 0.001 0.003 001 0603 0.1 03 1 3 ICollector Current -A o INPUT AND OUTPUT CAPACITANCE vs. REVERSE VOLTAGE f=10 MHz le =O(Cob) I =0(Cip) rary w o wo Ao Cop Output Capacitance pF 1 6 1 VcopCollector to Base Voltage-V VegEmitter to Base VoltageV 433