
DS21902 Rev. D-3 1 of 2 BS250
BS250
P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR
·High Input Impedance
·Fast Switching Speed
·CMOS Logic Compatible Input
·No Thermal Runaway or Secondary Breakdown
·Case: TO-92, Plastic
·Leads: Solderable per MIL-STD-202,
Method 208
·Pin Connection: See Diagram
·Approx Weight: 0.18 grams
Mechanical Data
Features
Characteristic Symbol Value Unit
Drain-Source Voltage –VDSS 60 V
Drain-Gate Voltage –VDGS 60 V
Gate-Source-Voltage (pulsed) VGS ±20 V
Drain Current (continuous) –ID250 mA
Power Dissipation @TC= 25°C (Note 1) Pd830 mW
Operating and Storage Temperature Range Tj, TSTG -55 +150 °C
Characteristic Symbol Value Unit
Maximum Forward Current (continuous) IF0.15 A
Forward Voltage Drop (Typ.) @ VGS = 0, IF= 0.15A, Tj= 25°C VF0.85 V
Maximum Ratings @ TA= 25°C unless otherwise specified
Inverse Diode @ TA= 25°C unless otherwise specified
Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 2mm from case.
D
SGD
HH
BOTTOM
VIEW
EA
B
C
G
TO-92
Dim Min Max
A4.45 4.70
B4.46 4.70
C12.7 —
D0.41 0.63
E3.43 3.68
G2.42 2.67
H1.14 1.40
All Dimensions in mm
Electrical Characteristics @ TA= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Drain-Source Breakdown Voltage -V(BR)DSS 60 70 — V ID= 100µA, VGS = 0
Gate Threshold Voltage -VGS(th) — 1.0 3.0 V VGS =V
DS, –ID= 1.0mA
Gate-Body Leakage Current -IGSS — — 20 nA -VGS = 15V, VDS = 0
Drain-Source Cutoff Current -IDSS — — 0.5 µA -VDS = 25V, VGS = 0
Drain-Source ON Resistance rDS (ON) — 3.5 5.0 W-VGS = 10V, –ID= 0.2A
Thermal Resistance, Junction to Ambient Air RqJA — — 150 K/W Note 1
Forward Transconductance gFS — 150 — mS -VDS = 10V, –ID= 0.2A,
f = 1.0MHz
Input Capacitance Ciss —60—pF
-VDS = 10V, VGS = 0,
f = 1.0MHz
Switching Times
Turn On Time
Turn Off Time
ton
toff
—
—
5
25
—
—
ns
-VGS = 10V, –VDS = 10V,
RD= 100W