DS21902 Rev. D-3 1 of 2 BS250
BS250
P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR
·High Input Impedance
·Fast Switching Speed
·CMOS Logic Compatible Input
·No Thermal Runaway or Secondary Breakdown
·Case: TO-92, Plastic
·Leads: Solderable per MIL-STD-202,
Method 208
·Pin Connection: See Diagram
·Approx Weight: 0.18 grams
Mechanical Data
Features
Characteristic Symbol Value Unit
Drain-Source Voltage –VDSS 60 V
Drain-Gate Voltage –VDGS 60 V
Gate-Source-Voltage (pulsed) VGS ±20 V
Drain Current (continuous) –ID250 mA
Power Dissipation @TC= 25°C (Note 1) Pd830 mW
Operating and Storage Temperature Range Tj, TSTG -55 +150 °C
Characteristic Symbol Value Unit
Maximum Forward Current (continuous) IF0.15 A
Forward Voltage Drop (Typ.) @ VGS = 0, IF= 0.15A, Tj= 25°C VF0.85 V
Maximum Ratings @ TA= 25°C unless otherwise specified
Inverse Diode @ TA= 25°C unless otherwise specified
Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 2mm from case.
D
SGD
HH
BOTTOM
VIEW
EA
B
C
G
TO-92
Dim Min Max
A4.45 4.70
B4.46 4.70
C12.7
D0.41 0.63
E3.43 3.68
G2.42 2.67
H1.14 1.40
All Dimensions in mm
Electrical Characteristics @ TA= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Drain-Source Breakdown Voltage -V(BR)DSS 60 70 V ID= 100µA, VGS = 0
Gate Threshold Voltage -VGS(th) 1.0 3.0 V VGS =V
DS, –ID= 1.0mA
Gate-Body Leakage Current -IGSS 20 nA -VGS = 15V, VDS = 0
Drain-Source Cutoff Current -IDSS 0.5 µA -VDS = 25V, VGS = 0
Drain-Source ON Resistance rDS (ON) 3.5 5.0 W-VGS = 10V, –ID= 0.2A
Thermal Resistance, Junction to Ambient Air RqJA 150 K/W Note 1
Forward Transconductance gFS 150 mS -VDS = 10V, –ID= 0.2A,
f = 1.0MHz
Input Capacitance Ciss —60—pF
-VDS = 10V, VGS = 0,
f = 1.0MHz
Switching Times
Turn On Time
Turn Off Time
ton
toff
5
25
ns
-VGS = 10V, –VDS = 10V,
RD= 100W
DS21902 Rev. D-3 2 of 2 BS250
0500
I , DRAIN CURRENT, (mA)
Fi
g
. 6, Transconductance vs. Drain Current
D
g , FORWARD TRANSCONDUCTANCE (mm)
fs
0
100
200
300
400
5
00
200 300
100 400
Pulse test width 80µs;
pulse duty factor 1%
-V = 10V
DS
0 100 200
T , AMBIENT TEMPERATURE (ºC)
Fi
g
. 1, Power Deratin
g
Curve
A
P , POWER DISSIPATION (W)
d
0
0.2
0.4
0.6
0.8
1
(See Note 1)
010
V , GATE-SOURCE VOLTAGE (V)
Fi
g
. 5, Transconductance vs Gate-Source Volta
g
e
GS
g , FORWARD TRANSCONDUCTANCE (mm)
fs
100
200
300
400
5
00
46
28
0
Pulse test width 80µs;
pulse duty factor 1%
-V = 10V
DS
0100
-V , DRAIN-SOURCE VOLTAGE (V)
Fi
g
. 2, Output Characteristics
DS
-I (ON) DRAIN SOURCE ON CURRENT (A)
D,
0
100
200
300
400
5
00
40 60
20 80
-V = 5.5V
GS
5.0V
3.0V
4.0V
7V
T = 25°C
A
Pulse test width 80µs;
pulse duty factor 1%
4.5V
6V
010
-V , DRAIN-SOURCE VOLTAGE (V)
Fi
g
. 4, Drain Current vs Gate-Source Volta
g
e
GS
-I DRAIN CURRENT (A)
D,
0
0.2
0.4
0.6
0.8
1.0
46
28
T = 25°C
A
Pulse test width 80µs;
pulse duty factor 1%
-V = 10V
DS
010
-V , DRAIN-SOURCE VOLTAGE (V)
Fi
g
. 3, Saturation Characteristics
DS
-I (ON) DRAIN SOURCE ON-CURRENT (mA)
D,
0
100
200
300
400
500
46
28
-V = 5V
GS
3.5V
3.0V
T = 25°C
A
4.0V
Pulse test width 80µs;
pulse duty factor 1%
4.5V