IAUT200N08S5N023
OptiMOS™-5 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
IDTC=25°C, VGS=10V1) 200 A
TC=100 °C,
VGS=10 V2)
148
Pulsed drain current2) ID,pulse TC=25 °C 800
Avalanche energy, single pulse2) EAS ID=100 A 330 mJ
Avalanche current, single pulse IAS -200 A
Gate source voltage
VGS - ±20 V
Power dissipation
Ptot TC=25 °C 200 W
Operating and storage temperature
Tj, Tstg - -55 ... +175 °C
IEC climatic category; DIN IEC 68-1 -
-55/175/56
Value
VDS
80
V
RDS(on)
2.3
ID
200
A
Product Summary
Type
Package
Marking
IAUT200N08S5N023
P/G-HSOF-8-1
5N08023
Gate
pin 1
Drain
Tab
Source
pin 2 - 8
H-PSOF-8-1
8
1
1 8
Tab
Tab
Rev. 1.0 page 1 2017-12-15
IAUT200N08S5N023
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics2)
Thermal resistance, junction - case
RthJC - - - 0.7 K/W
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage2) V(BR)DSS VGS=0 V,
ID=1 mA 80 - - V
Gate threshold voltage
VGS(th) VDS=VGS, ID=130 µA 2.2 33.8
Zero gate voltage drain current2) IDSS
VDS=80 V, VGS=0 V,
Tj=25 °C
-0.1 1µA
VDS=40 V, VGS=0 V,
Tj=85 °C2)
- 1 20
Gate-source leakage current
IGSS VGS=20 V, VDS=0 V - - 100 nA
Drain-source on-state resistance
RDS(on) VGS=6 V, ID=50 A -2.7 3.7 mΩ
VGS=10 V, ID=100 A -1.8 2.3
Values
Rev. 1.0 page 2 2017-12-15
IAUT200N08S5N023
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics2)
Input capacitance
Ciss -5900 7670 pF
Output capacitance
Coss -980 1274
Reverse transfer capacitance
Crss -45 68
Turn-on delay time
td(on) -16 -ns
Rise time
tr-11 -
Turn-off delay time
td(off) -30 -
Fall time
tf-32 -
Gate Charge Characteristics2)
Gate to source charge
Qgs -28 36 nC
Gate to drain charge
Qgd -18 28
Gate charge total
Qg-85 110
Gate plateau voltage
Vplateau -4.8 - V
Reverse Diode
Diode continous forward current2) IS- - 200 A
Diode pulse current2) IS,pulse - - 800
Diode forward voltage
VSD
VGS=0 V, IF=100 A,
Tj=25 °C
-0.9 1.2 V
Reverse recovery time2) trr -65 -ns
Reverse recovery charge2) Qrr -110 -nC
Values
VGS=0 V, VDS=40 V,
f=1 MHz
VDD=40 V, VGS=10 V,
ID=100 A, RG=3.5 W
VDD=40 V, ID=100 A,
VGS=0 to 10 V
2) Defined by design. Not subject to production test.
1) Current is limited by bondwire; with an RthJC = 0.7 K/W the chip is able to carry 216A at 25°C.
VR=40 V, IF=50A,
diF/dt=100 A/µs
TC=25 °C
Rev. 1.0 page 3 2017-12-15
IAUT200N08S5N023
1 Power dissipation 2 Drain current
Ptot = f(TC); VGS ≥ 6 V ID = f(TC); VGS ≥ 6 V
3 Safe operating area 4 Max. transient thermal impedance
ID = f(VDS); TC = 25 °C; D = 0 ZthJC = f(tp)
parameter: tpparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
1
10
100
1000
0.1 1 10 100
ID [A]
VDS [V]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
ZthJC [K/W]
tp [s]
0
50
100
150
200
050 100 150 200
Ptot [W]
TC [°C]
0
50
100
150
200
050 100 150 200
ID [A]
TC [°C]
Rev. 1.0 page 4 2017-12-15
IAUT200N08S5N023
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
ID = f(VDS); Tj = 25 °C RDS(on) = f(ID); Tj = 25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance
ID = f(VGS); VDS = 6V RDS(on) = f(Tj); ID = 80 A; VGS = 10 V
parameter: Tj
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
RDS(on) [mW]
Tj [°C]
-55 °C
25 °C
175 °C
0
175
350
525
700
2 4 6 8
ID [A]
VGS [V]
4.5 V
5 V
5.5 V
6 V
6.5 V
10 V
0
175
350
525
700
0 1 2 3 4 5 6 7
ID [A]
VDS [V]
4.5 V
5 V
5.5 V
6 V
6.5 V
0
2
4
6
8
10
12
050 100 150
RDS(on) [mW]
ID [A]
10 V
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IAUT200N08S5N023
9 Typ. gate threshold voltage 10 Typ. capacitances
VGS(th) = f(Tj); VGS = VDS C= f(VDS); VGS = 0 V; f = 1 MHz
parameter: ID
11 Typical forward diode characteristics 12 Typ. avalanche characteristics
IF = f(VSD)IAS = f(tAV)
parameter: Tjparameter: Tj(start)
25 °C
175 °C
100
101
102
103
0 0.2 0.4 0.6 0.8 1 1.2 1.4
IF [A]
VSD [V]
25 °C
100 °C
150 °C
1
10
100
1000
110 100 1000
IAV [A]
tAV [µs]
Ciss
Coss
Crss
102
103
104
010 20 30 40 50 60 70 80
C [pF]
VDS [V]
130 µA
1300 µA
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
VGS(th) [V]
Tj [°C]
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IAUT200N08S5N023
13 Typical avalanche energy 14 Drain-source breakdown voltage
EAS = f(Tj)VBR(DSS) = f(Tj); ID_typ = 1 mA
parameter: ID
15 Typ. gate charge 16 Gate charge waveforms
VGS = f(Qgate); ID = 100 A pulsed
parameter: VDD
76
78
80
82
84
86
88
-60 -20 20 60 100 140 180
VBR(DSS) [V]
Tj [°C]
16 V
40 V
0
1
2
3
4
5
6
7
8
9
10
025 50 75
VGS [V]
Qgate [nC]
64 V
200 A
100 A
50 A
0
300
600
25 75 125 175
EAS [mJ]
Tj [°C]
VGS
Qgate
Qgs Qgd
Qg
VGS
Qgate
Qgs Qgd
Qg
Rev. 1.0 page 7 2017-12-15
IAUT200N08S5N023
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2017
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0 page 8 2017-12-15
IAUT200N08S5N023
Revision History
Version
Version 1.0
Changes
Final Data Sheet
Date
15.12.2017
Rev. 1.0 page 9 2017-12-15