April 2017
DocID9565 Rev 7
1/29
This is information on a product in full production.
www.st.com
STD3NK80Z-1, STD3NK80ZT4,
STF3NK80Z, STP3NK80Z
N-channel 800 V, 3.8 Ω typ., 2.5 A SuperMESH™
Power MOSFETs in IPAK, DPAK, TO-220FP, TO-220 packages
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS
RDS(on) max.
ID
STD3NK80Z-1
800 V
4.5 Ω
2.5 A
STD3NK80ZT4
800 V
4.5 Ω
2.5 A
STF3NK80Z
800 V
4.5 Ω
2.5 A
STP3NK80Z
800 V
4.5 Ω
2.5 A
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Zener-protected
Applications
Switching applications
Description
These high voltage devices are Zener-protected
N-channel Power MOSFETs developed using the
SuperMESH™ technology by
STMicroelectronics, an optimization of the
well-established PowerMESH™. In addition to a
significant reduction in on-resistance, these
devices are designed to ensure a high level of
dv/dt capability for the most demanding
applications. Such series complements ST's full
range of high voltage MOSFETs including the
revolutionary MDmesh™ products.
Table 1: Device summary
Order code
Marking
Package
Packaging
STD3NK80Z-1
D3NK80Z
IPAK
Tube
STD3NK80ZT4
D3NK80Z
DPAK
Tape and reel
STF3NK80Z
F3NK80Z
TO-220FP
Tube
STP3NK80Z
P3NK80Z
TO-220
Tube
Contents
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z,
STP3NK80Z
2/29
DocID9565 Rev 7
Contents
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 9
4 Package information ..................................................................... 10
4.1 IPAK (TO-251) type A package information .................................... 10
4.2 DPAK package information ............................................................. 12
4.2.1 DPAK (TO-252) type A package information ................................... 12
4.2.2 DPAK (TO-252) type C2 package information ................................. 15
4.2.3 DPAK (TO-252) type E package information ................................... 18
4.2.4 DPAK (TO-252) packing information ................................................ 20
4.3 TO-220FP package information ...................................................... 22
4.4 TO-220 package information ........................................................... 24
4.4.1 TO-220 type A package information ................................................. 24
4.4.2 TO-220 type H package information ................................................ 26
5 Revision history ............................................................................ 28
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z,
STP3NK80Z
Electrical ratings
DocID9565 Rev 7
3/29
1 Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220,
DPAK,
IPAK
TO-220FP
VDS
Drain-source voltage
800
V
VGS
Gate-source voltage
±30
V
ID
Drain current (continuous) at TC = 25 °C
2.5
2.5(1)
A
Drain current (continuous) at TC = 100 °C
1.57
1.57(1)
A
IDM(2)
Drain current (pulsed)
10
10(1)
A
PTOT
Total dissipation at TC = 25 °C
70
25
W
ESD
Gate-source, human body model,
R = 1.5 kΩ, C = 100 pF
2
kV
dv/dt(3)
Peak diode recovery voltage slope
4.5
V/ns
VISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t = 1 s, TC = 25 °C)
2.5
kV
Tstg
Storage temperature range
-55 to 150
°C
Tj
Operation junction temperature range
Notes:
(1)This value is limited by package.
(2)Pulse width is limited by safe operating area.
(3)ISD ≤ 2.5 A, di/dt ≤ 200 A/μs, VDS(peak) < V(BR)DSS, VDD = 640 V
Table 3: Thermal data
Symbol
Parameter
Value
Unit
TO-220
TO-220FP
DPAK
IPAK
Rthj-case
Thermal resistance junction-case
1.78
5
1.78
°C/W
Rthj-amb
Thermal resistance junction-ambient
62.5
100
°C/W
Rthj-pcb(1)
Thermal resistance junction-pcb
50
°C/W
Notes:
(1)When mounted on FR-4 board of 1 inch², 2 oz Cu.
Table 4: Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or non-repetitive
(pulse width limited by TJ max)
2.5
A
EAS
Single pulse avalanche energy (starting TJ =25 °C, ID = IAR, VDD= 50 V)
170
mJ
Electrical characteristics
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z,
STP3NK80Z
4/29
DocID9565 Rev 7
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5: On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
800
V
IDSS
Zero gate voltage drain
current
VGS = 0 V, VDS = 800 V
1
µA
VGS = 0 V, VDS = 800 V,
TC = 125 °C(1)
50
µA
IGSS
Gate-body leakage current
VDS = 0 V, VGS = ±20 V
±10
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 50 µA
3
3.75
4.5
V
RDS(on)
Static drain-source
on- resistance
VGS = 10 V, ID = 1.25 A
3.8
4.5
Ω
Notes:
(1)Defined by design, not subject to production test.
Table 6: Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VGS = 0 V, VDS = 25 V,
f = 1 MHz
-
485
-
pF
Coss
Output capacitance
-
57
-
pF
Crss
Reverse transfer capacitance
-
11
-
pF
Coss eq(1)
Equivalent output capacitance
VGS = 0 V, VDS = 0 to 640 V
-
22
-
pF
Qg
Total gate charge
VDD = 640 V, ID = 2.5 A,
VGS = 0 to 10 V
(see Figure 17: "Test circuit
for gate charge behavior")
-
19
-
nC
Qgs
Gate-source charge
-
3.2
-
nC
Qgd
Gate-drain charge
-
10.8
-
nC
Notes:
(1)Coss eq is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80%
Table 7: Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD = 400 V, ID = 1.25 A, RG = 4.7
Ω, VGS =10 V
(see Figure 16: "Test circuit for
resistive load switching times" and
Figure 21: "Switching time
waveform")
-
17
-
ns
tr
Rise time
-
27
-
ns
td(off)
Turn-off delay time
-
36
-
ns
tf
Fall time
-
40
-
ns
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z,
STP3NK80Z
Electrical characteristics
DocID9565 Rev 7
5/29
Table 8: Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
2.5
A
ISDM(1)
Source-drain current
(pulsed)
-
10
A
VSD(2)
Forward on voltage
ISD = 2.5 A, VGS = 0 V
-
1.6
V
trr
Reverse recovery time
ISD = 2.5 A, di/dt = 100 A/µs
VDD = 50 V
(see Figure 18: "Test circuit
for inductive load switching
and diode recovery times")
-
384
ns
Qrr
Reverse recovery charge
-
1.6
μC
IRRM
Reverse recovery current
-
8.4
A
trr
Reverse recovery time
ISD = 2.5 A, di/dt = 100 A/µs,
VDD = 50 V , TJ = 150 °C
(see Figure 18: "Test circuit
for inductive load switching
and diode recovery times")
-
474
ns
Qrr
Reverse recovery charge
-
2.1
μC
IRRM
Reverse recovery current
-
8.8
A
Notes:
(1)Pulsed: pulse duration = 300 μs, duty cycle 1.5%.
(2)Pulse width is limited by safe operating area.
Table 9: Gate-source Zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)GSO
Gate-source breakdown
voltage
IGS = ±1 mA (open drain)
30
-
-
V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection, thus eliminating the need for additional external componentry.
Electrical characteristics
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z,
STP3NK80Z
6/29
DocID9565 Rev 7
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area for
TO-220, DPAK, IPAK
Figure 3: Thermal impedance for
TO-220, DPAK, IPAK
Figure 4: Safe operating area for TO-220FP
Figure 5: Thermal impedance for TO-220FP
Figure 6: Output characteristics
Figure 7: Transfer characteristics
CG20930
tp
Zth = k Rthj-C
δ = tp/Ƭ
10-5 10-4 10-3 10-2
10-2
10-1
K
10-1 tp(s)
Ƭ
δ = 0.5
δ = 0.2
δ = 0.1
δ = 0.01
δ = 0.02
δ = 0.05
SINGLE PULSE
Zth = k Rthj-C
δ = tp/Ƭ
tpƬ
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z,
STP3NK80Z
Electrical characteristics
DocID9565 Rev 7
7/29
Figure 8: Static drain-source on-resistance
Figure 9: Gate charge vs. gate-source voltage
Figure 10: Capacitance variations
Figure 11: Normalized gate threshold voltage
vs. temperature
Figure 12: Normalized on-resistance vs.
temperature
Figure 13: Source-drain diode forward
characteristics
Electrical characteristics
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z,
STP3NK80Z
8/29
DocID9565 Rev 7
Figure 14: Normalized V(BR)DSS vs. temperature
Figure 15: Maximum avalanche energy vs.
temperature
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z,
STP3NK80Z
Test circuits
DocID9565 Rev 7
9/29
3 Test circuits
Figure 16: Test circuit for resistive load
switching times
Figure 17: Test circuit for gate charge
behavior
Figure 18: Test circuit for inductive load
switching and diode recovery times
Figure 19: Unclamped inductive load test
circuit
Figure 20: Unclamped inductive waveform
Figure 21: Switching time waveform
Package information
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z,
STP3NK80Z
10/29
DocID9565 Rev 7
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
4.1 IPAK (TO-251) type A package information
Figure 22: IPAK (TO-251) type A package outline
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z,
STP3NK80Z
Package information
DocID9565 Rev 7
11/29
Table 10: IPAK (TO-251) type A package mechanical data
Dim.
mm
Min.
Typ.
Max.
A
2.20
2.40
A1
0.90
1.10
b
0.64
0.90
b2
0.95
b4
5.20
5.40
B5
0.30
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
E
6.40
6.60
e
2.28
e1
4.40
4.60
H
16.10
L
9.00
9.40
L1
0.80
1.20
L2
0.80
1.00
V1
10°
Package information
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z,
STP3NK80Z
12/29
DocID9565 Rev 7
4.2 DPAK package information
4.2.1 DPAK (TO-252) type A package information
Figure 23: DPAK (TO-252) type A package outline
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z,
STP3NK80Z
Package information
DocID9565 Rev 7
13/29
Table 11: DPAK (TO-252) type A mechanical data
Dim.
mm
Min.
Typ.
Max.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
b
0.64
0.90
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
D1
4.95
5.10
5.25
E
6.40
6.60
E1
4.60
4.70
4.80
e
2.16
2.28
2.40
e1
4.40
4.60
H
9.35
10.10
L
1.00
1.50
(L1)
2.60
2.80
3.00
L2
0.65
0.80
0.95
L4
0.60
1.00
R
0.20
V2
0°
8°
Package information
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z,
STP3NK80Z
14/29
DocID9565 Rev 7
Figure 24: DPAK (TO-252) type A recommended footprint (dimensions are in mm)
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z,
STP3NK80Z
Package information
DocID9565 Rev 7
15/29
4.2.2 DPAK (TO-252) type C2 package information
Figure 25: DPAK (TO-252) type C2 package outline
0068772_C2_22
Package information
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z,
STP3NK80Z
16/29
DocID9565 Rev 7
Table 12: DPAK (TO-252) type C2 mechanical data
Dim.
mm
Min.
Typ.
Max.
A
2.20
2.30
2.38
A1
0.90
1.01
1.10
A2
0.00
0.10
b
0.72
0.85
b4
5.13
5.33
5.46
c
0.47
0.60
c2
0.47
0.60
D
6.00
6.10
6.20
D1
5.10
5.60
E
6.50
6.60
6.70
E1
5.20
5.50
e
2.186
2.286
2.386
H
9.80
10.10
10.40
L
1.40
1.50
1.70
L1
2.90 REF
L2
0.90
1.25
L3
0.51 BSC
L4
0.60
0.80
1.00
L6
1.80 BSC
θ1
5°
7°
9°
θ2
5°
7°
9°
V2
0°
8°
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z,
STP3NK80Z
Package information
DocID9565 Rev 7
17/29
Figure 26: DPAK (TO-252) type C2 recommended footprint (dimensions are in mm)
FP_0068772_22
Package information
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z,
STP3NK80Z
18/29
DocID9565 Rev 7
4.2.3 DPAK (TO-252) type E package information
Figure 27: DPAK (TO-252) type E package outline
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z,
STP3NK80Z
Package information
DocID9565 Rev 7
19/29
Table 13: DPAK (TO-252) type E mechanical data
Dim.
mm
Min.
Typ.
Max.
A
2.18
2.39
A2
0.13
b
0.65
0.884
b4
4.95
5.46
c
0.46
0.61
c2
0.46
0.60
D
5.97
6.22
D1
5.21
E
6.35
6.73
E1
4.32
e
2.286
e1
4.572
H
9.94
10.34
L
1.50
1.78
L1
2.74
L2
0.89
1.27
L4
1.02
Figure 28: DPAK (TO-252) type E recommended footprint (dimensions are in mm)
Package information
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z,
STP3NK80Z
20/29
DocID9565 Rev 7
4.2.4 DPAK (TO-252) packing information
Figure 29: DPAK (TO-252) tape outline
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z,
STP3NK80Z
Package information
DocID9565 Rev 7
21/29
Figure 30: DPAK (TO-252) reel outline
Table 14: DPAK (TO-252) tape and reel mechanical data
Tape
Reel
Dim.
mm
Dim.
mm
Min.
Max.
Min.
Max.
A0
6.8
7
A
330
B0
10.4
10.6
B
1.5
B1
12.1
C
12.8
13.2
D
1.5
1.6
D
20.2
D1
1.5
G
16.4
18.4
E
1.65
1.85
N
50
F
7.4
7.6
T
22.4
K0
2.55
2.75
P0
3.9
4.1
Base qty.
2500
P1
7.9
8.1
Bulk qty.
2500
P2
1.9
2.1
R
40
T
0.25
0.35
W
15.7
16.3
Package information
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z,
STP3NK80Z
22/29
DocID9565 Rev 7
4.3 TO-220FP package information
Figure 31: TO-220FP package outline
7012510_Rev_12_B
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z,
STP3NK80Z
Package information
DocID9565 Rev 7
23/29
Table 15: TO-220FP package mechanical data
Dim.
mm
Min.
Typ.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
Package information
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z,
STP3NK80Z
24/29
DocID9565 Rev 7
4.4 TO-220 package information
4.4.1 TO-220 type A package information
Figure 32: TO-220 type A package outline
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z,
STP3NK80Z
Package information
DocID9565 Rev 7
25/29
Table 16: TO-220 type A mechanical data
Dim.
mm
Min.
Typ.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.55
c
0.48
0.70
D
15.25
15.75
D1
1.27
E
10.00
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13.00
14.00
L1
3.50
3.93
L20
16.40
L30
28.90
øP
3.75
3.85
Q
2.65
2.95
Package information
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z,
STP3NK80Z
26/29
DocID9565 Rev 7
4.4.2 TO-220 type H package information
Figure 33: TO-220 type H package outline
0015988_H_21
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z,
STP3NK80Z
Package information
DocID9565 Rev 7
27/29
Table 17: TO-220 type H package mechanical data
Dim.
mm
Min.
Typ.
Max.
A
4.40
4.45
4.50
A1
1.22
1.32
A2
2.49
2.59
2.69
A3
1.17
1.27
1.37
b
0.78
0.87
b2
1.25
1.34
b4
1.20
1.29
b6
1.50
b7
1.45
c
0.49
0.56
D
15.40
15.50
15.60
D1
9.05
9.15
9.25
E
10.08
10.18
10.28
e
2.44
2.54
2.64
e1
4.98
5.08
5.18
H1
6.25
6.35
6.45
L
13.20
13.40
13.60
L1
3.50
3.70
3.90
L2
16.30
16.40
16.50
L3
28.70
28.90
29.10
∅P
3.75
3.80
3.85
Q
2.70
2.80
2.90
Revision history
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z,
STP3NK80Z
28/29
DocID9565 Rev 7
5 Revision history
Table 18: Document revision history
Date
Revision
Changes
09-Sep-2004
3
Complete document
10-Aug-2006
4
New template, no content change
26-Feb-2009
5
Updated mechanical data
07-Sep-2009
6
VESD(G-S) value has been corrected
06-Apr-2017
7
Updated Section 1: "Electrical ratings", Section 2: "Electrical
characteristics" and Section 4: "Package information".
Minor text changes
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z,
STP3NK80Z
DocID9565 Rev 7
29/29
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