1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN/PNP Silicon
MAXIMUM RATINGS
Rating Symbol MPQ6100A
MPQ6600A1 Unit
Collector–Emitter Voltage VCEO 45 Vdc
Collector–Base Voltage VCBO 60 Vdc
Emitter–Base Voltage VEBO 5.0 Vdc
Collector Current — Continuous IC50 mAdc
Each
Transistor
Four
Transistors
Equal Power
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD500
4.0 900
7.2 mW
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD0.825
6.7 2.4
19.2 Watts
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg –55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Junction to
Case Junction to
Ambient Unit
Thermal Resistance(1) Each Die
Effective, 4 Die 151
52 250
139 °C/W
°C/W
Coupling Factors Q1–Q4 or Q2–Q3
Q1–Q2 or Q3–Q4 34
2.0 70
26 %
%
1. RθJA is measured with the device soldered into a typical printed circuit board.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MPQ6100A/D
SEMICONDUCTOR TECHNICAL DATA
*Motorola Preferred Device
CASE 646–06, STYLE 1
TO–116
1
14
Voltage and Current are negative
for PNP Transistors
Motorola, Inc. 1997
1234567
14 13 12 11 10 9 8
1234567
14 13 12 11 10 9 8
COMPLEMENTARY
MPQ6100A
TYPE A
MPQ6600A1
TYPE B
REV 2
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(2)
(IC = 10 mAdc, IB = 0) MPQ6100A, 6600A1 V(BR)CEO 45 — — Vdc
Collector–Base Breakdown Voltage
(IC = 10
m
Adc, IE = 0) V(BR)CBO 60 — — Vdc
Emitter–Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0) V(BR)EBO 5.0 — — Vdc
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0) ICBO — — 10 nAdc
ON CHARACTERISTICS(2)
DC Current Gain
(IC = 100
m
Adc, VCE = 5.0 Vdc) MPQ6100A, 6600A1
(IC = 500 µAdc, VCE = 5.0 Vdc) MPQ6100A, 6600A1
(IC = 1.0 mAdc, VCE = 5.0 Vdc) MPQ6100A, 6600A1
(IC = 10 mAdc, VCE = 5.0 Vdc) MPQ6100A, 6600A1
hFE 100
150
150
125
—
—
—
—
—
—
—
—
—
Collector–Emitter Saturation V oltage
(IC = 1.0 mAdc, IB = 100 µAdc) VCE(sat) — — 0.25 Vdc
Base–Emitter Saturation V oltage
(IC = 1.0 mAdc, IB = 100 µAdc) VBE(sat) — — 0.8 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 500 µAdc, VCE = 5.0 Vdc, f = 20 MHz) fT50 — — MHz
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f =1.0 MHz) PNP
NPN
Cobo —
—1.2
1.8 4.0
4.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) PNP
NPN
Cibo —
——
—8.0
8.0
pF
Noise Figure
(IC = 100 µAdc, VCE = 5.0 Vdc, RS = 10 kΩ,
f = 1.0 kHz, BW = 10 kHz)
NF — 4.0 — dB
MATCHING CHARACTERISTICS (MPQ6600A1 ONLY)
DC Current Gain Ratio
(IC = 100 µAdc, VCE = 5.0 Vdc) hFE1/hFE2 0.8 — 1.0 —
Base–Emitter Voltage Differential
(IC = 100 µAdc, VCE = 5.0 Vdc) |VBE1–VBE2| — — 20 mVdc
2. Pulse Test: Pulse Width
v
300
m
s; Duty Cycle
v
2.0%.
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
SPOT NOISE FIGURE
(VCE = 10 Vdc, TA = 25°C)
12
10
8
6
4
2
0100 k10 k1.0 k
Rs, SOURCE RESISTANCE (OHMS)
Figure 1. Source Resistance Effects, f = 1.0 kHz
NOISE FIGURE (dB)
12
10
8
6
4
2
0100 k10 k1.0 k
Rs, SOURCE RESISTANCE (OHMS)
Figure 2. Source Resistance Effects, f = 10 Hz
NOISE FIGURE (dB)
–1 mA
–100
µ
A
–10
µ
A
–1 mA
–100
µ
A
–10
µ
A
12
10
8
6
4
2
0100 k10 k1.0 k
f, FREQUENCY (Hz)
NOISE FIGURE (dB)
Rs SOURCE RESISTANCE IC = –100
µ
A, RS = 30 k
Ω
IC = –10
µ
A, RS = 100 k
Ω
IC = –1.0 mA, RS = 1.0 k
Ω
IC = –10
µ
A, RS = 10 k
Ω
IC = –100
µ
A, RS = 3.0 k
Ω
Figure 3. Frequency Effects
hFE, DC CURRENT GAIN
800
600
400
200
0–0.01 –0.1 –1.0 –10
IC, COLLECTOR CURRENT (mAdc)
Figure 4. Typical Current
Gain Characteristics
VCE = –5.0 Vdc
TA = 125
°
C
TA = 25
°
C
TA = –55
°
C
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
CASE 646–06
TO–116
ISSUE M
17
14 8
B
A
F
HG D K
C
N
L
J
M
SEATING
PLANE
STYLE 1:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
4. NO CONNECTION
5. EMITTER
6. BASE
7. COLLECTOR
8. COLLECTOR
9. BASE
10. EMITTER
11. NO CONNECTION
12. EMITTER
13. BASE
14. COLLECTOR
NOTES:
1. LEADS WITHIN 0.13 (0.005) RADIUS OF TRUE
POSITION AT SEATING PLANE AT MAXIMUM
MATERIAL CONDITION.
2. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
3. DIMENSION B DOES NOT INCLUDE MOLD
FLASH.
4. ROUNDED CORNERS OPTIONAL.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.715 0.770 18.16 19.56
B0.240 0.260 6.10 6.60
C0.145 0.185 3.69 4.69
D0.015 0.021 0.38 0.53
F0.040 0.070 1.02 1.78
G0.100 BSC 2.54 BSC
H0.052 0.095 1.32 2.41
J0.008 0.015 0.20 0.38
K0.115 0.135 2.92 3.43
L0.300 BSC 7.62 BSC
M0 10 0 10
N0.015 0.039 0.39 1.01
____
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MPQ6100A/D
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