Original Creation Date: 02/09/99
Last Update Date: 08/15/03
Last Major Revision Date: 02/21/00
MNDS90LV031A-X REV 1C0 MICROCIRCUIT DATA SHEET
3V LVDS Quad CMOS Differential Line Driver
General Description
The DS90LV031A is a quad CMOS differential line driver utilizing Low Voltage
Differentional Signaling (LVDS) technology. It is designed for applications requiring low
power dissipation and high data rates.
The DS90LV031A accepts TTL/CMOS input levels and translates them to low voltage (350 mV)
differential output siginals. In addition the driver supports a TRI-STATE function that
may be used to disable the output stage, disabling the load current, and thus dropping the
device to a low idle power state.
The EN and EN* inputs allow active Low or active High control of the TRI-STATE outputs.
The enables are common to all four drivers. The DS90LV031A and companion line receiver
(DS90LV032A) provide a new alternative to high power pseudo-ECL devices for high speed
point-to-point interface applications.
In addition, the DS90LV031A provides power-off high impedance LVDS outputs. This feature
assures minimal loading effect on the LVDS bus lines when VCC is not present.
NS Part Numbers
DS90LV031AW-MLS
DS90LV031AW-QML
DS90LV031AWGMLS
DS90LV031AWGQML
Industry Part Number
DS90LV031A
Prime Die
DS90LV031A
Controlling Document
SEE FEATURES SECTION
Processing
MIL-STD-883, Method 5004
Quality Conformance Inspection
MIL-STD-883, Method 5005
Subgrp Description Temp ( C)
o
1 Static tests at +25
2 Static tests at +125
3 Static tests at -55
4 Dynamic tests at +25
5 Dynamic tests at +125
6 Dynamic tests at -55
7 Functional tests at +25
8A Functional tests at +125
8B Functional tests at -55
9 Switching tests at +25
10 Switching tests at +125
11 Switching tests at -55
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MICROCIRCUIT DATA SHEET
MNDS90LV031A-X REV 1C0
Features
- High impedance LVDS outputs with power-off
- 3.3V power supply design
- +/- 350mV differential signaling
- Low power dissipation.
- Low differential skew.
- Low propagation delay
- Interoperable with existing 5V LVDS devices
- Military operating temprature range
- Pin compatible with DS26C31.
- Compatible with IEEE 1596.3 SCI LVDS standard
- Compatible with proposed TIA/EIA-644 LVDS standard
- Typical Rise/Fall times of 800pS.
- Typical Tri-State Enable/Disable Delays of less than 5nS.
CONTROLLING DOCUMENT:
DS90LV031AW-QML 5962-9865101QFA
DS90LV031AWGQML 5962-9865101QXA
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MICROCIRCUIT DATA SHEET
MNDS90LV031A-X REV 1C0
(Absolute Maximum Ratings)
(Note 1)
Supply Voltage (Vcc) -0.3 to +4V
Input Voltage (Din) -0.3 to (Vcc+0.3V)
Enable Input Voltage (EN, EN*) -0.3 to (Vcc+0.3V)
Output Voltage (Dout+, Dout-) -0.3 to +3.9V
Storage Temperature Range -65C to +150C
Lead Temperature Soldering (4 sec) 260C
ESD Rating. 6000 Volts.
Maximum Junction Temperature +150C
Maximum Power Dissipation @ +25C
(Note 2) 845mW16 PIN CERPAK (W Pkg) 845mW16 PIN CERAMIC SOIC (WG Pkg)
Thermal Resistance. (Theta JA) 148C/W16 PIN CERPAK (W Pkg) 148C/W16 PIN CERAMIC SOIC (WG Pkg)
Thermal Resistance. (Theta JC) 22C/W16 PIN CERPAK (W Pkg) 22C/W16 PIN CERAMIC SOIC (WG Pkg)
Note 1: Absolute Maximum Ratings are those values beyond which the safety of the device
cannot be guaranteed. They are not meant to imply that the device should be operated
at these limits. The table of "Electrical Characteristics" provides conditions for
actual device operation.
Note 2: Derate (W & WG Pkgs) at 6.8mW/C for temperatures above +25C.
Recommended Operating Conditions
Supply Voltage 3.0 to 3.6V
Operating Free Air Temperature -55 to +125 C
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MNDS90LV031A-X REV 1C0 MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: Vcc = 3.0/3.6V unless otherwise specified
SYMBOL PARAMETER CONDITIONS NOTES PIN-
NAME MIN MAX UNIT SUB-
GROUPS
Vod1 Differential
Ouput Voltage RL = 100 Ohms Dout-,
Dout+ 250 450 mV 1, 2,
3
DVod1 Change in
Magnitude of Vod1
for complementary
output States
RL = 100 Ohms Dout-,
Dout+ 50 mV 1, 2,
3
Vos Offset Voltage RL = 100 Ohms Dout-,
Dout+ 1.125 1.625 V 1, 2,
3
DVos Change in
Magnitude of Vos
for Complementary
Output States
RL = 100 Ohms Dout-,
Dout+ 50 mV 1, 2,
3
Voh Output Voltage
High RL = 100 Ohms Dout-,
Dout+ 1.85 V 1, 2,
3
Vol Output Voltage
Low RL = 100 Ohms Dout-,
Dout+ .9 V 1, 2,
3
Vih Input Voltage
High 1 Din,
EN, EN* 2.0 Vcc V 1, 2,
3
Vil Input Voltage Low 1 Din,
EN, EN* Gnd 0.8 V 1, 2,
3
IIH Input Current Vin = Vcc or 2.5V, Vcc = 3.6V Din,
EN, EN* +10 uA 1, 2,
3
IIL Input Current Vin = Gnd or 0.4V, Vcc = 3.6V Din,
EN, EN* +10 uA 1, 2,
3
Vcl Input Clamp
Voltage Icl = -8mA, Vcc = 3.0V Din,
EN, EN* -1.5 V 1, 2,
3
Ios Output Short
Circuit Current ENABLED Din = Vcc, Dout + = 0V or
Din = Gnd, Dout- = 0V Dout-,
Dout+ -9.0 mA 1, 2,
3
Ioff Power-off Leakage Vout = 0V or 3.6V
Vcc = 0V or Vcc = Open Dout-,
Dout+ +20 uA 1, 2,
3
Ioz Output TRI-STATE
Current EN = 0.8V and EN* = 2.0V
VOUT = 0V or VCC, VCC = 3.6V Dout-,
Dout+ +10 uA 1, 2,
3
Icc No Load Drivers
Enabled Supply
Current
Din = Vcc or Gnd Vcc 18 mA 1, 2,
3
Iccl Loaded Drivers
Enabled Supply
Current
Rl = 100 ohms All Channels,
Din = Vcc or Gnd (all inputs) Vcc 35 mA 1, 2,
3
Iccz Loaded or No Load
Drivers Disabled
Supply Current
Din = Vcc or Gnd, En = Gnd, En* = Vcc Vcc 12 mA 1, 2,
3
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MNDS90LV031A-X REV 1C0 MICROCIRCUIT DATA SHEET
Electrical Characteristics
AC PARAMETERS
(The following conditions apply to all the following parameters, unless otherwise specified.)
AC: VCC = 3.0/3.3/3.6V, RL = 100 Ohms, CL = 20pF
SYMBOL PARAMETER CONDITIONS NOTES PIN-
NAME MIN MAX UNIT SUB-
GROUPS
tPHLD Differential
Propagation Delay
High to Low
0.3 3.5 ns 9, 10,
11
tPLHD Differential
Propagation Delay
Low to High
0.3 3.5 ns 9, 10,
11
tSKD Differential Skew
tPHLD-tPLHD 1.5 ns 9, 10,
11
tSK1 Channel to
Channel Skew 2 1.75 ns 9, 10,
11
tSK2 Chip to Chip Skew 3 3.2 ns 9, 10,
11
Note 1: Tested during VOH/VOL tests.
Note 2: Channel to Channel Skew is defined as the difference between the propagation delay of
one channel and that of the others on the same chip with any event on the inputs.
Note 3: Chip to Chip Skew is defined as the difference between the minimum and maximum
specified differential propagation delays.
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MICROCIRCUIT DATA SHEET
MNDS90LV031A-X REV 1C0
Graphics and Diagrams
GRAPHICS# DESCRIPTION
W16ARL CERPACK (W), 16 LEAD (P/P DWG)
WG16ARC CERAMIC SOIC (WG), 16 LEAD (P/P DWG)
See attached graphics following this page.
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MICROCIRCUIT DATA SHEET
MNDS90LV031A-X REV 1C0
Revision History
Rev ECN # Rel Date Originator Changes
0A0 M0003265 03/10/00 Mike Fitzgerald Initial MDS Release
1A0 M0003630 08/16/02 Mike Fitzgerald Added WG pkg NSID's, split out Pkg references under
the "Absolute Maximum Ratings" section for Thermal
Resistance, and Power Dissipation. Added WG pkg
Marketing Outline Drawing.
1B0 M0004034 08/15/03 Rose Malone Update MDS: MNDS90LV031A-X, Rev. 1A0 to
MNDS90LV031A-X, Rev. 1B0. Added to Main Table NS Part
Number DS90LV031AW-MLS. Moved reference to SMD number
from Main Table to Features Section.
1C0 M0004183 08/15/03 Rose Malone Update MDS: MNDS90LV031A-X, Rev. 1B0 to 1C0. MDS
enhancements: Additional verbage to the general
discription, Main Table and Added new bullet to the
Features Section.
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