S4111/S4114 series
S4111/S4114 series are Si photodiode linear array mounted in ceramic DIPs (Dual Inline Packages). These photodiode arrays are primarily
developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range from UV to near infrared light. Since all
elements can be used with a reverse bias for charge storage readout, S4111/S4114 series are able to detect low level light with high sensitivity.
Cross-talk between elements is minimized to maintain signal purity. Special filters can be attached as the input window.
PHOTODIODE
Si photodiode array
16, 35, 46 element Si photodiode array for UV to NIR
Features
l
Large active area
l
Low cross-talk
l
Wide spectral response range
l
High UV sensitivity
l
Wide linearity
l
S4111 series: Enhanced infrared sensitivity,
low dark current
l
S4114 series: Low terminal capacitance,
high-speed response
Applications
l
Multichannel spectrophotometers
l
Color analyzers
l
Light spectrum analyzers
l
Light position detection
■ General ratings / Absolute maximum ratings
Absolute maximum ratings
Active area
(per 1 element)
Package
Size Effective
area
Between
elements
measure
Between
elements
pitch
Reverse
voltage
VR Max.
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Dimensional
outline/
Window
m aterial *
(mm) (mm) (mm2) (mm) (mm)
Number
of
elements
(V) (°C) (°C)
S4111-16Q ➀/Q
S4111-16R ➁/R 18 pin DIP
1.45 × 0.9
1.305 16
S4111-35Q ➂/Q 40 pin DIP 35
S4111-46Q ➃/Q 48 pin DIP 46
S4114-35Q ➂/Q 40 pin DIP 35
S4114-46Q ➃/Q 48 pin DIP
4.4 × 0.9 3.96
0.1 1.0
46
15 -20 to +60 -20 to +80
■ Electrical and optical characteristics (Typ. Ta=25 °C, per 1 element, unless otherwise noted)
Photo sensitivity
S
Spectral
response
range
λ
Peak
sensitivity
wavelength
λpλp
200 nm 633 nm
Dark current
ID
Max.
Shunt
resistance
Rsh
VR=10 mV
Terminal
capacitance
Ct
Rise time
tr
RL=1 kΩ
λ=655 nm
NEP
λ=λp
Type No.
(nm) (nm) (A/W) (A/W) (A/W)
V
R
=10 mV
(pA)
V
R
=10 V
(pA)
Min
(GΩ)
Typ.
(GΩ)
V
R
=0 V
(pF)
V
R
=10 V
(pF)
V
R
=0 V
(µs)
V
R
=10 V
(µs)
V
R
=10 mV
(W /Hz
1/2
)
V
R
=10 V
(W /Hz
1/2
)
S4111-16Q
190 to 1100
0.08 0.43
S4111-16R
320 to 1100
-0.39 5 25 2.0 250 200 50 0.5 0.1
2.0 × 10
-16
1.7 × 10
-15
S4111-35Q
S4111-46Q
190 to 1100
960 0.58
10 50 1.0 30 550 120 1.2 0.3
5.6 × 10
-16
3.1 × 10
-15
S4114-35Q
S4114-46Q
190 to 1000
800 0.50
0.08 0.43
60 300 0.15 2 35 20 0.1 0.05
2.5 × 10
-15
8.0 × 10
-15
* Window material R: resin coating, Q: quartz glass
Si photodiode array
S4111/S4114 series
■ Dark current vs. reverse voltage
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
190 400 600 800 1000 1200
WAVELENGTH (nm)
PHOTO SENSITIVITY (A/W)
(Typ. Ta=25 ˚C)
S4114 SERIES
S4111-16Q/-35Q/-46Q
S4111-16R
■ Spectral response
KMPDB0112EA
+1.4
+1.2
+1.0
+0.8
+0.6
+0.4
+0.2
-0.2
0
190 1100
WAVELENGTH (nm)
800 1000600
400
TEMPERATURE COEFFICIENT (%/˚C)
(Typ. )
S4111 SERIES
S4114 SERIES
KMPDB0113EA
1
10
RELATIVE SENSITIVITY (%)
LIGHT POSITION ON ACTIVE AREA (500
m
m/div.)
(Ta=25 ˚C,
l
=655 mm, VR=0 V)
0.1
100
KMPDB0015EA
100
10
1
0.1
RELATIVE SENSITIVITY (%)
LIGHT POSITION ON ACTIVE AREA (500
m
m/div.)
(Ta=25 ˚C,
l
=655 mm, V
R
=0 V)
KMPDB018EB
0.01 0.1 1 10 100
100 fA
10 fA
1 pA
10 pA
100 pA
REVERSE VOLTAGE (V)
DARK CURRENT
S4114-35Q/-46Q
S4111-35Q/-46Q
S4111-16Q/-16R
(Typ. Ta=25 ˚C)
KMPDB0114EA
0.1 1 10 100
10 pF
100 pF
1 nF
REVERSE VOLTAGE (V)
TERMINAL CAPACITANCE
S4111-16Q/-16R
S4114-35Q/-46Q
S4111-35Q/-46Q
(Typ. Ta=25 ˚C)
KMPDB0115EA
■ Example of cross-talk
S4114 seriesS4111 series
■ Terminal capacitance vs. reverse voltage
■ Photo sensitivity temperature characteristics
Si photodiode array
S4111/S4114 series
■ Dimensional outlines (unit: mm)
P 2.54 × 8 = 20.32
22.86 ± 0.3
18.8
22.0
2.2 ± 0.3
0.5
2.54
(4.5)
INDEX MARK
7.87 ± 0.3
7.49 ± 0.2
1234567
0.46
7.62 ± 0.3
0.5 ± 0.2
6.5
PHOTOSENSITIVE
SURFACE
98
18 17 16 15 14 13 12 1011
0.25
ACTIVE AREA
15.9
QUARTZ GLASS
CH 1 CH 16
1.45
0.9 ± 0.3
S4111-46Q 1.65
aType No.
S4114-46Q 1.55
3.0 ± 0.3
P 2.54 × 23 = 58.42 2.54
0.46
CH 1
4.4
ACTIVE AREA
45.9
65.0 ± 0.8
15.11 ± 0.25
CH 46
(4.5)
15.5 ± 0.3
252647
2
1
24
23
48
PIN No.
15.24 ± 0.25*
a
0.25
PHOTOSENSITIVE
SURFACE
KMPDA0135EA
P 2.54 × 8 = 20.32
22.86 ± 0.3
18.8
ACTIVE AREA
15.9
2.2 ± 0.3
2.54
(4.5)
INDEX MARK
1.45
7.87 ± 0.3
7.49 ± 0.2
123456789
18 17 16 15 14 13 12 11 10
0.46
7.62 ± 0.3
0.5 ± 0.2
PHOTOSENSITIVE
SURFACE
0.25
CH 1 CH 16
0.9 ± 0.3
KMPDA0136EA
KMPDA0021ECKMPDA0019EC
S4111-35Q 1.45
aType No.
S4114-35Q 1.35
P 2.54 × 19 = 48.26
CH 1
4.4
ACTIVE AREA
34.9
50.8 ± 0.6
15.5 ± 0.3
212239
2
1
20
19
2.8 ± 0.3
2.54
0.46
CH 35
40
(4.5)
15.11 ± 0.25
PIN No.
15.24 ± 0.25*
a
0.25
PHOTOSENSITIVE
SURFACE
■ Details of elements (for all types)
a
b cc
S4111-16Q/16R 1.45 0.9 0.1
abc
4.4 0.9 0.1
S4111-35Q/46Q
S4114-35Q/46Q
KMPDA0112EA
➃ S4111-46Q, S4114-46Q➂ S4111-35Q, S4114-35Q
➀ S4111-16Q ➁ S4111-16R
Si photodiode array
S4111/S4114 series
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believ ed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K.
Cat. No. KMPD1002E05
Jun. 2004 DN
■ Pin connections
Pin No. 16-element
type
35-element
type
46-element
type
1KCKCKC
2 2 2 2
34 4 4
4 6 6 6
58 8 8
610 10 10
712 12 12
814 14 14
916 16 16
10 KC 18 18
11 15 NC 20
12 13 20 22
13 11 22 24
14 924 26
15 7 26 28
16 528 30
17 3 30 32
18 132 34
19 34 36
20 *138
21 KC 40
22 35 42
23 33 44
24 31 46
25 29 KC
26 27 45
27 25 43
28 23 41
29 21 39
30 19 37
31 17 35
32 15 33
33 13 31
34 11 29
35 9 27
36 725
37 5 23
38 321
39 1 19
40 *117
41 15
42 13
43 11
44 9
45 7
46 5
47 3
48 1
*1: Please open it.
■ Operating circuits
➀ In the most generally used circuit, operational amplifiers are con-
nected to each channel to read the output in real time. The output of
an operational amplifier is of low impedance and thus can be easily
multiplexed.
➁ In the charge storage readout method, the charge stored in the
junction capacitance of each channel, which is proportional to the
incident light intensity, can be read out in sequence by a multiplexer.
With this method, reverse voltage must be applied to the
photodiodes, so S4111 and S4114 series are suitable. One amplifier
is sufficient but care should be taken regarding noise, dynamic
range, etc.
PHOTODIODE ARRAY
ADDRESS
MULTIPLEXER
BIAS
KMPDC0002EA
PHOTODIODE ARRAY MULTIPLEXER
KMPDC0001EA
