LS4148 Silicon Expitaxial Planar Diode fast switching diode in MiniMELF case especially suited for automatic surface mounting. Identical electrically to standard JEDEC 1N4148 These diodes are delivered taped. Details see Taping. Absolute Maximum Ratings (T, = 25 C) e-3.540,1 4 Cathode Mark + ih A C) Tr Ir 8 KA > Glass case MiniMELF Weight approx. 0.05g Dimensions in mm Symbol Value Unit Reverse Voltage Vi 75 Vv Peak Reverse Voltage Vem 100 Vv Rectified Current (Average) I 150) mA Half Wave Rectification with Resist. Load at T,, = 25 C and f 2 50 Hz Surge Forward Current att < 1s and T, = 25 C lou 500 mA Power Dissipation at Tamp = 29 C tot 500 mW Junction Temperature T, 175 C Storage Temperature Range T, -65 to+ 175 C 1) Valid provided that electrodes are kept at ambient temperature SEMTECH ELECTRONICS LTD. ( wholly owned subsidiary of AGMEY TECHNOLOGY LTO. ) LS4148 Characteristics at T, = 25C Symbol Min. Typ. Max. Unit Forward Voltage Vv. - - 1 V atl_=10mA Leakage Current at VV, =20V I, - - 25 nA atV,=75V I, - - 5 pA at V, = 20 V, T, = 150 C la - - 50 pA Reverse Breakdown Voltage Vern 100 - - V tested with 100 pA Pulses Capacitance C,,, - - 4 pF atV.=V, =0 Voltage Rise when Switching ON tested with 50 mA Forward Pulses V,., - : 2.5 V tp = 0.1 s, Rise Time < 30ns, fp = 5 to 100 kHz Reverse Recovery Time . - - 4 ns from |-= 10 mA to |,= 1 MA, V, =6 V, R, = 100 Q, Thermal Resistance Runa - - 0.35 K/mW Junction to Ambient Air Rectification Efficiency Ny 0.45 - - - at f = 100 MHz, V,,=2V ) Valid provided that electrodes are kept at ambient temperature 60 2 2nF Rectification Efficiency Measurement Circuit SEMTECH ELECTRONICS LTD. ( wholly owned subsidiary of AGMEY TECHNOLOGY LTO. )