GaAs Infrared Emitting Diode
SEP8506
DESCRIPTION
FEATURES
Side-emitting plastic package
•
50¡ (nominal) beam angle
•
935 nm wavelength
•
Mechanically and spectrally matched to
SDP8406 phototransistor, SDP8106
photodarlington and SDP8000/8600 series
Schmitt trigger
•
The SEP8506 is a gallium arsenide infrared emitting
diode molded in a side-emitting red plastic package.
The chip is positioned to emit radiation through a plastic
lens from the side of the package.
DIM_071.ds4
INFRA-20.TIF
OUTLINE DIMENSIONS
3 plc decimals
±0.005(0.12)
Tolerance
2 plc decimals
±0.020(0.51)
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
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GaAs Infrared Emitting Diode
SEP8506
ELECTRICAL CHARACTERISTICS
UNITS
TEST CONDITIONS
MIN
PARAMETER
SYMBOL
TYP
MAX
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Continuous Forward Current
50 mA
Power Dissipation
100 mW [À]
Storage Temperature Range
-40¡C to 85¡C
Operating Temperature Range
-40¡C to 85¡C
Soldering Temperature (5 sec)
240¡C
Notes
1. Derate linearly from 25¡C free-air temperature at the rate of
0.78 mW/¡C.
SCHEMATIC
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
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41
GaAs Infrared Emitting Diode
SEP8506
Radiant Intensity vs
Angular Displacement
gra_030.ds4
Angular displacement - degrees
Relative intensity
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-60 -45 -30 -15 0 +15 +30 +45 +60
Fig. 1 Radiant Intensity vs
Forward Current
gra_028.ds4
Forward current - mA
Normalized radiant intensity
0.1
0.2
0.5
1.0
2.0
5.0
10.0
10 20 30 40 50 100
TA = 25 °C
Fig. 2
Forward Voltage vs
Forward Current
gra_003.ds4
Forward current - mA
Forward voltage - V
1.05
1.10
1.15
1.20
1.25
1.30
1.35
1.40
0 20 40 60
Fig. 3 Forward Voltage vs
Temperature
gra_207.ds4
Temperature - °C
Forward voltage - V
1.00
1.05
1.15
1.20
1.30
1.35
1.40
-40 -15 10 35 60 85
IF = 20 mA
1.25
1.10
Fig. 4
Spectral Bandwidth
gra_005.ds4
Wavelength - nm
Relative intensity
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
870 890 910 930 950 970 990 1010
Fig. 5 Coupling Characteristics
with SDP8406
gra_031.ds4
Lens-to-lens separation - inches
Light current - mA
0.1
0.2
0.4
0.6
1.0
2
4
6
10
0.01 0.02 0.05 0.1 0.2 0.5 1.0
IF = 20 mA
VCE = 5V
TA = 25 °C
Fig. 6
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
42
GaAs Infrared Emitting Diode
SEP8506
Relative Power Output vs
Free Air Temperature
gra_130.ds4
T
A - Free-air temperature - (°C)
Relative power output
0.1
1.0
10
-50 -25 0+25 +50 +75 +100
0.2
0.5
2.0
5.0
IF = 30 mA
IF = 20 mA
IF = 10 mA
IF = 40 mA
Fig. 7
All Performance Curves Show Typical Values
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
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