© Semiconductor Components Industries, LLC, 2014
April, 2014 − Rev. 2 1Publication Order Number:
NSI50010Y/D
NSI50010YT1G
Constant Current Regulator
& LED Driver
50 V, 10 mA + 30%, 460 mW Package
The linear constant current regulator (CCR) is a simple, economical
and robust device designed to provide a cost−effective solution for
regulating current in LEDs (similar to Constant Current Diode, CCD).
The CCR is based on Self-Biased Transistor (SBT) technology and
regulates current over a wide voltage range. It is designed with a
negative temperature coefficient to protect LEDs from thermal
runaway at extreme voltages and currents.
The CCR turns on immediately and is at 40% of regulation with
only 0.5 V Vak. It requires no external components allowing it to be
designed as a high or low−side regulator. The high anode-cathode
voltage rating withstands surges common in Automotive, Industrial
and Commercial Signage applications. The CCR comes in thermally
robust packages and is qualified to AEC-Q101 standard, and
UL94−V0 certified.
Features
Robust Power Package: 460 mW
Wide Operating Voltage Range
Immediate Turn-On
Voltage Surge Suppressing − Protecting LEDs
UL94−V0 Certified
SBT (Self−Biased Transistor) Technology
Negative Temperature Coefficient
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
Automobile: Chevron Side Mirror Markers, Cluster, Display &
Instrument Backlighting, CHMSL, Map Light
AC Lighting Panels, Display Signage, Decorative Lighting, Channel
Lettering
Switch Contact Wetting
Application Note AND8391/D − Power Dissipation Considerations
Application Note AND8349/D − Automotive CHMSL
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Symbol Value Unit
Anode−Cathode Voltage Vak Max 50 V
Reverse Voltage VR500 mV
Operating and Storage Junction
Temperature Range TJ, Tstg −55 to +150 °C
ESD Rating: Human Body Model
Machine Model ESD Class 1C
Class B
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
AJ = Device Code
M = Date Code
G= Pb−Free Package
http://onsemi.com
SOD−123
CASE 425
STYLE 1
MARKING DIAGRAM
AJ M G
G
(Note: Microdot may be in either location)
Anode 2
Cathode 1
1
2
12
Ireg(SS) = 10 mA
@ Vak = 7.5 V
Device Package Shipping
ORDERING INFORMATION
NSI50010YT1G SOD−123
(Pb−Free) 3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer t o our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
NSV50010YT1G SOD−123
(Pb−Free) 3000/Tape & Reel
NSI50010YT1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Steady State Current @ Vak = 7.5 V (Note 1) Ireg(SS) 7.0 10 13 mA
Voltage Overhead (Note 2) Voverhead 1.8 V
Pulse Current @ Vak = 7.5 V (Note 3) Ireg(P) 7.1 10.5 13.8 mA
Capacitance @ Vak = 7.5 V (Note 4) C 2.5 pF
Capacitance @ Vak = 0 V (Note 4) C 5.7 pF
1. Ireg(SS) steady state is the voltage (Vak) applied for a time duration 10 sec, using FR−4 @ 300 mm2 1 oz. Copper traces, in still air.
2. Voverhead = Vin − VLEDs. Voverhead is typical value for 80% Ireg(SS).
3. Ireg(P) non−repetitive pulse test. Pulse width t 300 msec.
4. f = 1 MHz, 0.02 V RMS.
Figure 1. CCR Voltage−Current Characteristic
NSI50010YT1G
http://onsemi.com
3
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation (Note 5) TA = 25°C
Derate above 25°CPD208
1.66 mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 5) RθJA 600 °C/W
Thermal Reference, Lead−to−Ambient (Note 5) RψLA 404 °C/W
Thermal Reference, Junction−to−Cathode Lead (Note 5) RψJL 196 °C/W
Total Device Dissipation (Note 6) TA = 25°C
Derate above 25°CPD227
1.8 mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 6) RθJA 550 °C/W
Thermal Reference, Lead−to−Ambient (Note 6) RψLA 390 °C/W
Thermal Reference, Junction−to−Cathode Lead (Note 6) RψJL 160 °C/W
Total Device Dissipation (Note 7) TA = 25°C
Derate above 25°CPD347
2.8 mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 7) RθJA 360 °C/W
Thermal Reference, Lead−to−Ambient (Note 7) RψLA 200 °C/W
Thermal Reference, Junction−to−Cathode Lead (Note 7) RψJL 160 °C/W
Total Device Dissipation (Note 8) TA = 25°C
Derate above 25°CPD368
2.9 mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 8) RθJA 340 °C/W
Thermal Reference, Lead−to−Ambient (Note 8) RψLA 208 °C/W
Thermal Reference, Junction−to−Cathode Lead (Note 8) RψJL 132 °C/W
Total Device Dissipation (Note 9) TA = 25°C
Derate above 25°CPD436
3.5 mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 9) RθJA 287 °C/W
Thermal Reference, Lead−to−Ambient (Note 9) RψLA 139 °C/W
Thermal Reference, Junction−to−Cathode Lead (Note 9) RψJL 148 °C/W
Total Device Dissipation (Note 10) TA = 25°C
Derate above 25°CPD463
3.7 mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 10) RθJA 270 °C/W
Thermal Reference, Lead−to−Ambient (Note 10) RψLA 150 °C/W
Thermal Reference, Junction−to−Cathode Lead (Note 10) RψJL 120 °C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
5. FR−4 @ 100 mm2, 1 oz. copper traces, still air.
6. FR−4 @ 100 mm2, 2 oz. copper traces, still air.
7. FR−4 @ 300 mm2, 1 oz. copper traces, still air.
8. FR−4 @ 300 mm2, 2 oz. copper traces, still air.
9. FR−4 @ 500 mm2, 1 oz. copper traces, still air.
10.FR−4 @ 500 mm2, 2 oz. copper traces, still air.
NOTE: Lead measurements are made by non−contact methods such as IR with treated surface to increase emissivity to 0.9.
Lead temperature measurement by attaching a T/C may yield values as high as 30% higher °C/W values based upon empirical
measurements and method of attachment.
NSI50010YT1G
http://onsemi.com
4
TYPICAL PERFORMANCE CUR VES
Minimum FR−4 @ 300 mm2 1 oz Copper Trace, Still Air
Figure 2. Steady State Current (Ireg(SS)) vs.
Anode−Cathode Voltage (Vak)
Vak, ANODE−CATHODE VOLTAGE (V)
96543
0
1
3
4
5
8
Figure 3. Pulse Current (Ireg(P)) vs.
Anode−Cathode Voltage (Vak)
Figure 4. Steady State Current vs. Pulse
Current Testing
Vak, ANODE−CATHODE VOLTAGE (V)
Ireg(P), PULSE CURRENT (mA)
10987654
7
9
10
12
13
14121110
9
10
11
Ireg(SS), STEADY STATE CURRENT (mA)
Ireg(P), PULSE CURRENT (mA)
Ireg(SS), STEADY STATE CURRENT (mA)
710
13
DC Test Steady State, Still Air
8
2
6
11
12
13
Non−Repetitive Pulse Test
2
7
8
Vak @ 7.5 V
8
7
Figure 5. Current Regulation vs. Time
TIME (s)
3025201050
10
10.5
Ireg, CURRENT REGULATION (mA)
15 35
9.5
Vak @ 7.5 V
TA = 25°C
TA = 25°C
Figure 6. Power Dissipation vs. Ambient
Temperature @ TJ = 1505C
TA, AMBIENT TEMPERATURE (°C)
8060200−20−40
200
300
500
PD, POWER DISSIPATION (mW)
40
500 mm2/2 oz
500 mm2/1 oz
300 mm2/1 oz
400
100
100 mm2/1 oz 100 mm2/2 oz
300 mm2/2 oz
600
800
700
9
10
11
12
879
210
TA = −40°C
TA = 25°C
TA = 85°C[ −0.024 mA/°C
typ @ Vak = 7.5 V
[ −0.019 mA/°C
typ @ Vak = 7.5 V
TA = 25°C
3
NSI50010YT1G
http://onsemi.com
5
APPLICATIONS INFORMATION
The CCR is a self biased transistor designed to regulate the
current through itself and any devices in series with it. The
device has a slight negative temperature coefficient, as
shown in Figure 2 – Tri Temp. (i.e. if the temperature
increases the current will decrease). This negative
temperature coefficient will protect the LEDS by reducing
the current as temperature rises.
The CCR turns on immediately and is typically at 20% of
regulation with only 0.5 V across it.
The device is capable of handling voltage for short
durations of up to 50 V so long as the die temperature does
not exceed 150°C. The determination will depend on the
thermal pad it is mounted on, the ambient temperature, the
pulse duration, pulse shape and repetition.
Single LED String
The CCR can be placed in series with LEDs as a High Side
or a Low Side Driver. The number of the LEDs can vary
from one to an unlimited number. The designer needs to
calculate the maximum voltage across the CCR by taking the
maximum input voltage less the voltage across the LED
string (Figures 7 and 8).
Figure 7.
Figure 8.
Higher Current LED Strings
Two or more fixed current CCRs can be connected in
parallel. The current through them is additive (Figure 9).
Figure 9.
NSI50010YT1G
http://onsemi.com
6
Other Currents
The adjustable CCR can be placed in parallel with any
other CCR to obtain a desired current. The adjustable CCR
provides the ability to adjust the current as LED efficiency
increases to obtain the same light output (Figure 10).
Figure 10.
Dimming using PWM
The dimming of an LED string can be easily achieved by
placing a BJT in series with the CCR (Figure 11).
Figure 11.
The method of pulsing the current through the LEDs is
known as Pulse Width Modulation (PWM) and has become
the preferred method of changing the light level. LEDs being
a silicon device, turn on and off rapidly in response to the
current through them being turned on and off. The switching
time is in the order of 100 nanoseconds, this equates to a
maximum frequency of 10 Mhz, and applications will
typically operate from a 100 Hz to 100 kHz. Below 100 Hz
the human eye will detect a flicker from the light emitted
from the LEDs. Between 500 Hz and 20 kHz the circuit may
generate audible sound. Dimming is achieved by turning the
LEDs on and off for a portion of a single cycle. This on/off
cycle is called the Duty cycle (D) and is expressed by the
amount of time the LEDs are on (Ton) divided by the total
time of an on/off cycle (Ts) (Figure 12).
Figure 12.
The current through the LEDs is constant during the period
they are turned on resulting in the light being consistent with
no shift i n chromaticity (color). The b rightness i s in p roportion
to the percentage of time that the LEDs are turned on.
Figure 13 i s a t ypical response o f L uminance vs Duty C ycle.
Figure 13. Luminous Emmitance vs. Duty Cycle
DUTY CYCLE (%) 100908070605040
0
1000
3000
ILLUMINANCE (lx)
2000
30
4000
6000
20100
5000
Lux
Linear
Reducing EMI
Designers creating circuits switching medium to high
currents need to be concerned about Electromagnetic
Interference (EMI). The LEDs and the CCR switch
extremely fast, less than 100 nanoseconds. To help eliminate
EMI, a capacitor can be added to the circuit across R2.
(Figure 11) This will cause the slope on the rising and falling
edge on the current through the circuit to be extended. The
slope of the CCR on/off current can be controlled by the
values of R1 and C1.
The selected delay / slope will impact the frequency that
is selected to operate the dimming circuit. The longer the
delay, the lower the frequency will be. The delay time should
not be less than a 10:1 ratio of the minimum on time. The
frequency is also impacted by the resolution and dimming
steps that are required. With a delay of 1.5 microseconds on
the rise and the fall edges, the minimum on time would be
30 microseconds. If the design called for a resolution of 100
dimming steps, then a total duty cycle time (Ts) of 3
milliseconds or a frequency of 333 Hz will be required.
NSI50010YT1G
http://onsemi.com
7
Thermal Considerations
As power in the CCR increases, it might become
necessary to provide some thermal relief. The maximum
power dissipation supported by the device is dependent
upon board design and layout. Mounting pad configuration
on the PCB, the board material, and the ambient temperature
affect the rate of junction temperature rise for the part. When
the device has good thermal conductivity through the PCB,
the junction temperature will be relatively low with high
power applications. The maximum dissipation the device
can handle is given by:
PD(MAX) +TJ(MAX) *TA
RqJA
Referring to the thermal table on page 2 the appropriate
RqJA for the circuit board can be selected.
AC Applications
The CCR is a DC device; however, it can be used with full
wave rectified AC as shown in application notes
AND8433/D and AND8492/D and design notes
DN05013/D and DN06065/D. Figure 14 shows the basic
circuit configuration.
Figure 14. Basic AC Application
NSI50010YT1G
http://onsemi.com
8
PACKAGE DIMENSIONS
SOD−123
CASE 425−04
ISSUE G
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 1:
PIN 1. CATHODE
2. ANODE
1.22
0.048
ÉÉ
ÉÉ
ÉÉ
ÉÉ
0.91
0.036
2.36
0.093
4.19
0.165
ǒmm
inchesǓ
SCALE 10:1
ÉÉ
ÉÉ
ÉÉ
ÉÉ
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
ÂÂÂ
ÂÂÂ
E
b
DA
L
C
1
2
A1
DIM MIN NOM MAX
MILLIMETERS INCHES
A0.94 1.17 1.35 0.037
A1 0.00 0.05 0.10 0.000
b0.51 0.61 0.71 0.020
c
1.60
0.15
0.055D1.40 1.80
E2.54 2.69 2.84 0.100
---
3.68 0.140
L0.25
3.86
0.010
HE
0.046
0.002
0.024
0.063
0.106
0.145
0.053
0.004
0.028
0.071
0.112
0.152
MIN NOM MAX
3.56
HE
---
--- ---
0.006
--- ---
--- ---
q
--- ---
q00
10 10
°°° °
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the r ight t o m ake c hanges wit hout f urt her n ot ice t o a ny p roduct s h erein. SCILLC makes no w arranty, representation or g uarantee r egarding t he s uitability o f i ts p roduct s f or a ny
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation s pecial, c onsequential o r i ncidental d amages. T ypical” p arameters w hich m ay b e p rovided i n S CILLC d ata s heets a nd/or s pecificat ions c a n a nd d o v ary in dif ferent a pplications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under i ts p at ent rights nor the rights of others. SCILLC pr oduct s ar e n ot d esigned, intended, or authorized for use as components in systems intended for
surgical implant i nto t he b ody, o r o ther a pplications i ntended t o s upport or sustain l ife, o r f or a ny o ther a pplication i n w hich t he f ailure o f t he S CILLC p roduct c ould c reat e a s ituat ion w here
personal injury or death may occur. Should Buyer purchase o r use SCILLC products for any such unintended o r unauthorized application, Buyer shall indemnify and hold S CILLC and
its o f ficers, e mployees, s ubsidiaries, a ff iliates, and d istributors h armless against a ll c laims, c osts, d amages, a nd expenses, a nd r easonable a tt orney f ees a rising o ut o f, d irectly o r i ndirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCI LLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
P
UBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
NSI50010Y/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your loc
al
Sales Representative
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
ON Semiconductor:
NSV50010YT1G