109
Silicon NPN Triple Diffused Planar Transistor
Application
:
Audio Temperature Compensation and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC4495
80
50
6
3
1
25(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
2SC4495
10
max
10
max
50
min
500
min
0.5
max
40
typ
30
typ
Unit
µ
A
µ
A
V
V
MHz
pF
Conditions
V
CB
=80V
V
EB
=6V
I
C
=25mA
V
CE
=4V, I
C
=0.5A
I
C
=1A, I
B
=20mA
V
CE
=12V, I
E
=–0.1A
V
CB
=10V,f=1MHz
2SC4495
(Ta=25°C)
(Ta=25°C)
I
C
–
V
CE
Characteristics
(Typical)
h
FE
–
I
C
Characteristics
(Typical)
h
FE
–
I
C
Temperature
Characteristics
(Typical)
θ
j-a
–
t
Characteristics
I
C
–
V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat)
–
I
B
Characteristics
(Typical)
Pc
–
T
a
Derating
0
0
1
2
3
2
1
3
456
Collector-Emitter Voltage V
CE
(V)
Collector Current I
C
(A)
30mA
I
B
=0.5mA
18mA
12mA
1mA
2mA
3mA
8mA
5mA
Safe Operating Area
(Single Pulse)
f
T
–
I
E
Characteristics
(Typical)
0
1.5
0.5
1
100
1
10
1000
Base Current I
B
(mA)
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
I
C
=1A
2A
3A
3
1
0.1
0.5
0.01
100
500
1000
3000
Collector Current I
C
(A)
DC Current Gain h
FE
(V
CE
=4V)
Typ
–0.005
–0.01
–0.1
–1
0
20
40
60
Cut-off Frequency f
T
(MH
Z
)
(V
CE
=12V)
Emitter Current I
E
(A)
Typ
10
50
3
5
100
0.05
0.1
1
0.5
10
5
Collector-Emitter Voltage V
CE
(V)
Collector Current I
C
(A)
Without Heatsink
Natural Cooling
DC
100ms
10ms
1ms
30
20
10
2
0
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
150x150x2
50x50x2
100x
100x2
0
3
2.5
0.5
1.5
1
2
0
1.5
1
0.5
Base-Emittor Voltage V
BE
(V)
Collector Current I
C
(A)
(V
CE
=4V)
125˚C (Case Temp)
25˚C (Case Temp)
–55˚C (Case Temp)
Collector Current I
C
(A)
DC Current Gain h
FE
1
7
5
1
10
100
1000
2000
Time t(ms)
Transient Thermal Resistance
θ
j-a
(˚C/W)
3
1
0.1
0.5
0.01
20
100
50
500
1000
5000
(V
CE
=4V)
125˚C
–55˚C
25˚C
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
■
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
20
R
L
(
Ω
)
20
I
C
(A)
1
V
BB2
(V)
–5
I
B2
(mA)
–30
t
on
(
µ
s)
0.45
typ
t
stg
(
µ
s)
1.60
typ
t
f
(
µ
s)
0.85
typ
I
B1
(mA)
15
V
BB1
(V)
10
External Dimensions
FM20(TO220F)
ø3.3
±0.2
10.1
±0.2
4.0
±0.2
16.9
±0.3
13.0min
8.4
±0.2
0.8
±0.2
3.9
±0.2
2.54
2.54
1.35
±0.15
0.85
+0.2
-0.1
1.35
±0.15
2.2
±0.2
4.2
±0.2
2.8
c
0.5
2.4
±0.2
0.45
+0.2
-0.1
BE
C
a
b
Weight : Approx 2.0g
a. Type No.
b. Lot No.
High hFE
L
OW
V
CE
(sat)
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