PHOTOCOUPLER
PS2501-1,-4,PS2501L-1,-4
HIGH ISOLATION VOLTAGE
SINGLE TRANSISTOR TYPE
MULTI PHOTOCOUPLER SERIES NEPOC Series
Document No. PN10225EJ05V0DS (5th edition)
Date Published February 2010 NS
DESCRIPTION
The PS2501-1, -4 and PS2501L-1, -4 are optically coupled isolators containing a GaAs light emitting diode and an
NPN silicon phototransistor.
The PS2501-1, -4 are in a plastic DIP (Dual In-line Package) and the PS2501L-1, -4 are lead bending type (Gull-
wing) for surface mount.
FEATURES
PS2501-1, PS2501L-1
1. Anode
2. Cathode
3. Emitter
4. Collector
12
43
PS2501-4, PS2501L-4
12345678
16 15 14 13 12 11 10 9
1, 3, 5, 7. Anode
2, 4, 6, 8. Cathode
9, 11, 13, 15. Emitter
10, 12, 14, 16. Collector
(Top View)
PIN CONNECTION
High isolation voltage (BV = 5 000 Vr.m.s.)
High collector to emitter voltage (VCEO = 80 V)
High-speed switching (tr = 3
μ
s TYP., tf = 5
μ
s TYP.)
Ordering number of tape product: PS2501L-1-F3: 2 000 pcs/reel
• Safety standards
UL approved: No. E72422
APPLICATIONS
• Power supply
• Telephone/FAX.
• FA/OA equipment
Programmable logic controller
The mark shows major revised points.
The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field.
PS2501-1,-4,PS2501L-1,-4
PACKAGE DIMENSIONS (UNIT : mm)
DIP Type
PS2501-4
PS2501-1
19.8±0.5
6.5±0.5
3.5±0.3
4.15±0.43.2±0.4
2.54
1.25±0.15 0.50±0.10
0.25
M
0 to 15°
7.62
0.25
+0.1
–0.05
3.5±0.3
4.15±0.43.2±0.4
2.54
1.25±0.15 0.50±0.10
0.25
M
4.6±0.35
6.5±0.5
0 to 15°
7.62
0.25
+0.1
–0.05
12
43
18
16 9
Lead Bending Type
PS2501L-4
PS2501L-1
0.25
M
4.6±0.35
6.5±0.5
3.5±0.3
2.54
1.25±0.15
0.15
0.9±0.25
9.60±0.4
0.25
+0.1
–0.05
0.1
+0.1
–0.05
19.8±0.5
6.5±0.5
2.54
1.25±0.15
0.25
M
3.5±0.3
0.15
0.9±0.25
9.60±0.4
0.25
+0.1
–0.05
0.1
+0.1
–0.05
12
43
18
16 9
PHOTOCOUPLER CONSTRUCTION
Parameter Unit (MIN.)
Air Distance 7 mm
Outer Creepage Distance 7 mm
Inner Creepage Distance 3.5 mm
Isolation Distance 0.3 mm
2 Data Sheet PN10225EJ05V0DS
PS2501-1,-4,PS2501L-1,-4
MARKING EXAMPLE
2501
MJ031 PS2501-4
NJ031
PS2501-1 PS2501-4
Assembly Lot
Week Assembled
Year Assembled
(Last 1 Digit)
In-house Code
CTR Rank Code
No. 1 pin
Mark No. 1 pin
Mark
N
J
Week Assembled
Year Assembled
(Last 1 Digit)
In-house Code
CTR Rank Code
Package
New PKG
Made in Japan
031
M031
Country Assembled
Type Number
Assembly Lot
JJ
J
Package
New PKG
Made in Japan Made in Taiwan
K
R
New PKG
Pb-Free
Pb-Free and
Halogen Free
*1
Y
*1 Special version
3
Data Sheet PN10225EJ05V0DS
PS2501-1,-4,PS2501L-1,-4
ORDERING INFORMATION
Part Number Order Number Solder Plating
Specification Packing Style Safety Standard
Approval Application Part
Number *1
PS2501-1 PS2501-1-A Pb-Free Magazine case 100 pcs Standard products PS2501-1
PS2501L-1 PS2501L-1-A (UL approved)
PS2501L-1-F3 PS2501L-1-F3-A Embossed Tape 2 000 pcs/reel
PS2501-4 PS2501-4-A Magazine case 20 pcs PS2501-4
PS2501L-4 PS2501L-4-A
PS2501-1 PS2501-1Y-A Special version Magazine case 100 pcs Standard products PS2501-1
PS2501L-1 PS2501L-1Y-A (Pb-Free and (UL approved)
PS2501L-1-F3 PS2501L-1Y-F3-A Halogen Free) Embossed Tape 2 000 pcs/reel
*1 For the application of the Safety Standard, following part number should be used.
4 Data Sheet PN10225EJ05V0DS
PS2501-1,-4,PS2501L-1,-4
ABSOLUTE MAXIMUM RATINGS (Unless otherwise specified, TA = 25°C)
Ratings
Parameter Symbol PS2501-1,
PS2501L-1 PS2501-4,
PS2501L-4 Unit
Diode Reverse Voltage VR6 V
Forward Current (DC) IF80 mA/ch
Power Dissipation Derating
Δ
PD/°C 1.5 1.2 mW/°C
Power Dissipation PD150 120 mW/ch
Peak Forward Current*1 IFP 1 A/ch
Transistor Collector to Emitter Voltage VCEO 80 V
Emitter to Collector Voltage VECO 7 V
Collector Current IC50 mA/ch
Power Dissipation Derating
Δ
PC/°C 1.5 1.2 mW/°C
Power Dissipation PC150 120 mW/ch
Isolation Voltage*2 BV 5 000 Vr.m.s.
Operating Ambient Temperature TA 55 to +100 °C
Storage Temperature Tstg 55 to +150 °C
*1 PW = 100
μ
s, Duty Cycle = 1%
*2 AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output.
Pins 1-2 shorted together, 3-4 shorted together (PS2501-1, PS2501L-1).
Pins 1-8 shorted together, 9-16 shorted together (PS2501-4, PS2501L-4).
5
Data Sheet PN10225EJ05V0DS
PS2501-1,-4,PS2501L-1,-4
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Diode Forward Voltage VF IF = 10 mA 1.17 1.4 V
Reverse Current IR VR = 5 V 5
μ
A
Terminal Capacitance Ct V = 0 V, f = 1.0 MHz 50 pF
Transistor Collector to Emitter Dark
Current ICEO VCE = 80 V, IF = 0 mA 100 nA
Coupled Current Transfer Ratio
(IC/IF)*1 CTR IF = 5 mA, VCE = 5 V 80 300 600 %
Collector Saturation
Voltage VCE (sat) IF = 10 mA, IC = 2 mA 0.3 V
Isolation Resistance RI-O VI-O = 1.0 kVDC 1011 Ω
Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz 0.5 pF
Rise Time*2 tr VCC = 10 V, IC = 2 mA, RL = 100 Ω3
μ
s
Fall Time*2 tf5
*1 CTR rank ( * : only PS2501-1, PS2501L-1)
K* : 300 to 600 (%)
L* : 200 to 400 (%)
M* : 80 to 240 (%)
D* : 100 to 300 (%)
H* : 80 to 160 (%)
W* : 130 to 260 (%)
Q* : 100 to 200 (%)
N : 80 to 600 (%)
<R> *2 Test circuit for switching time
PW = 100 s
Duty Cycle = 1/10
μ
Pulse Input V
CC
V
OUT
R
L
= 100 Ω
50 Ω
I
F
Input
Output
90%
10%
t
r
t
d
t
f
t
s
t
on
t
off
6 Data Sheet PN10225EJ05V0DS
PS2501-1,-4,PS2501L-1,-4
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = 25°C)
150
100
50
0255075
100 125 150
1.5 mW/°C
1.2 mW/°C
150
100
50
25 50 100 1250 150
10 000
100
1 000
100
10
1
7550250–25–50
V
CE
= 80 V 10
0.80.60.40.20 1.0
5
1
0.5
0.1
10 mA
40
1.5 mW/°C
1.2 mW/°C
20 mA
50 mA
I
F
= 1 mA
2 mA
5 mA
40 V
24 V
10 V
5 V
PS2501-1
PS2501L-1
PS2501-4
PS2501L-4
PS2501-1
PS2501L-1
PS2501-4
PS2501L-4
100
1.51.41.31.21.11.00.90.80.7
50
10
5
1
0.5
0.1
+60°C
+25°C
T
A
= +100°C
Diode Power Dissipation P
D
(mW)
Transistor Power Dissipation P
C
(mW)
Ambient Temperature T
A
(°C)
Forward Current I
F
(mA)
Forward Voltage V
F
(V)
Collector to Emitter Dark Current I
CEO
(nA)
Collector Saturation Voltage V
CE (sat)
(V)
Ambient Temperature T
A
(°C)
Ambient Temperature T
A
(°C)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
FORWARD CURRENT vs.
FORWARD VOLTAGE
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
Collector Current I
C
(mA)
75
70
2
60
50
40
30
20
10
046810
20 mA
I
F
= 5 mA
10 mA
50 mA
Collector Current I
C
(mA)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
0°C
–25°C
–50°C
Remark The graphs indicate nominal characteristics.
7
Data Sheet PN10225EJ05V0DS
PS2501-1,-4,PS2501L-1,-4
1.2
–50
1.0
0.8
0.6
0.4
0.2
0–25 0 25 50 75 100
50
10
1
0.1 10 k
5 k
1 k
5001005010
1 000
100
10
110 k5 k1 k500100
0
–5
–10
–15
–20
0.5 1 2 5 10 20 50 100200 500
100 k50 k
IC = 2 mA,
VCC = 10 V,
CTR = 290%
tf
tr
td
ts
I
F
= 5 mA,
V
CC
= 5 V,
CTR = 290%
8
t
s
t
d
t
r
t
f
IF = 5 mA,
VCE = 5 V
100 Ω
300 Ω
RL = 1 kΩ
Normalized to 1.0
at TA = 25°C,
IF = 5 mA, VCE = 5 V
Forward Current IF (mA)
Ambient Temperature TA (°C)
Load Resistance RL (Ω)
Frequency f (kHz)
Normalized Current Transfer Ratio CTR
Current Transfer Ratio CTR (%)
Normalized Gain GV
Load Resistance RL (Ω)
Switching Time t ( s)
μ
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
SWITCHING TIME vs.
LOAD RESISTANCE SWITCHING TIME vs.
LOAD RESISTANCE
FREQUENCY RESPONSE
Switching Time t ( s)
μ
450
400
350
300
250
200
150
100
50
00.05 0.1 0.5 1 5 10 50
TA = 25°C
TA = 60°C
1.2
1.0
0.8
0.6
0.4
0.2
0102103104
Time (Hr)
CTR (Relative Value)
LONG TERM CTR DEGRADATION
IF = 5 mA
105
Sample A
B
C
D
VCE = 5 V
Remark The graphs indicate nominal characteristics.
Data Sheet PN10225EJ05V0DS
PS2501-1,-4,PS2501L-1,-4
TAPING SPECIFICATIONS (UNIT : mm)
Tape Direction
Outline and Dimensions (Tape)
Outline and Dimensions (Reel)
PS2501L-1-F3
1.55±0.1
2.0±0.1
4.0±0.1
1.75±0.1
4.5 MAX.
4.0±0.1
0.4
5.3±0.1
8.0±0.1
7.5±0.1
16.0±0.3
10.3±0.1
1.5
+0.1
–0
φ
Packing: 2 000 pcs/reel
2.0±0.5
R 1.0
13.0±0.2
φ
21.0±0.8
φ
330±2.0
100±1.0
2.0±0.5
φ
φ
15.9 to 19.4
Outer edge of
flange
21.5±1.0
17.5±1.0
9
Data Sheet PN10225EJ05V0DS
PS2501-1,-4,PS2501L-1,-4
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
Peak reflow temperature 260°C or below (package surface temperature)
Time of peak reflow temperature 10 seconds or less
Time of temperature higher than 220°C 60 seconds or less
Time to preheat temperature from 120 to 180°C 120±30 s
Number of reflows Three
Flux Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
10
120±30 s
(preheating)
220°C
180°C
Package Surface Temperature T (°C)
Time (s)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
to 60 s
260°C MAX.
120°C
(2) Wave soldering
Temperature 260°C or below (molten solder temperature)
Time 10 seconds or less
Preheating conditions 120°C or below (package surface temperature)
Number of times One (Allowed to be dipped in solder including plastic mold portion.)
Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine
content of 0.2 Wt% is recommended.)
(3) Soldering by soldering iron
Peak temperature (lead part temperature) 350°C or below
Time (each pins) 3 seconds or less
Flux Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
(a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead.
(b) Please be sure that the temperature of the package would not be heated over 100°C.
Data Sheet PN10225EJ05V0DS
PS2501-1,-4,PS2501L-1,-4
(4) Cautions
Fluxes
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between
collector-emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute
maximum ratings.
3. Measurement conditions of current transfer ratios ( CTR), which differ according to photocoupler
Check the setting values before use, since the forward current conditions at CTR measurement differ according
to product.
When using products other than at the specified forward current, the characteristics curves may differ from the
standard curves due to CTR value variations or the like. This tendency may sometimes be obvious, especially
below IF = 1 mA.
Therefore, check the characteristics under the actual operating conditions and thoroughly take variations or the
like into consideration before use.
USAGE CAUTIONS
1. Protect against static electricity when handling.
2. Avoid storage at a high temperature and high humidity.
11
Data Sheet PN10225EJ05V0DS
PS2501-1,-4,PS2501L-1,-4
Caution GaAs Products This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
Do not burn, destroy, cut, crush, or chemically dissolve the product.
Do not lick the product or in any way allow it to enter the mouth.
NOTICE
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application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. California
Eastern Laboratories and Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits,
software, or information.
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not warrant that such information is error free. California Eastern Laboratories and Renesas Electronics assumes no liability whatsoever for any damages
incurred by you resulting from errors in or omissions from the information included herein.
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