Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Lower Gate Charge BVDSS 20V
▼ Simple Gate Drive RDS(ON) 600mΩ
▼ Small Package Outline ID600mA
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol Unit
VDS V
VGS V
ID@TA=25℃mA
ID@TA=70℃mA
IDM A
PD@TA=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient3360 ℃/W
Data and specifications subject to change without notice 1
-55 to 150
Operating Junction Temperature Range -55 to 150
201204255
Thermal Data Parameter
Linear Derating Factor 0.003
Storage Temperature Range
Pulsed Drain Current12.5
Total Power Dissipation 0.35
Continuous Drain Current3600
Continuous Drain Current3470
Drain-Source Voltage 20
Gate-Source Voltage +8
AP1332GEU-HF
Parameter Rating
Halogen-Free Product
D
G
S
SOT-323
G
D
S
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, low on-resistance and cost-
effectiveness.
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.02 - V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=4.5V, ID=600mA - - 600 mΩ
VGS=2.5V, ID=300mA - - 2 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.5 - 1.25 V
gfs Forward Transconductance VDS=5V, ID=600mA - 1 - S
IDSS Drain-Source Leakage Current VDS=20V, VGS=0V - - 1 uA
Drain-Source Leakage Current (Tj=70oC) VDS=16V ,VGS=0V - - 10 uA
IGSS Gate-Source Leakage VGS=+8V, VDS=0V - - +30 uA
QgTotal Gate Charge2ID=600mA - 1.3 2 nC
Qgs Gate-Source Charge VDS=16V - 0.3 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 0.5 - nC
td(on) Turn-on Delay Time2VDS=10V - 21 - ns
trRise Time ID=600mA - 53 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=5V - 100 - ns
tfFall Time RD=16.7Ω- 125 - ns
Ciss Input Capacitance VGS=0V - 38 60 pF
Coss Output Capacitance VDS=10V - 17 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 12 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VSD Forward On Voltage2IS=300mA, VGS=0V - - 1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test.
3.Surface mounted on FR4 board, t ≦ 10 sec.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP1332GEU-HF
A
P1332GEU-HF
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0.0
0.5
1.0
1.5
2.0
2.5
0.0 0.5 1.0 1.5 2.0 2.5
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=25oC5.0V
4.5V
3.5V
2.5V
VG=2.0V
0.0
0.5
1.0
1.5
2.0
2.5
0.0 0.5 1.0 1.5 2.0 2.5
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=150oC5.0V
4.5V
3.5V
2.5V
VG=2.0V
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=0.6A
VG=4.5V
0.0
0.5
1.0
1.5
2.0
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized VGS(th)
0.0
0.2
0.4
0.6
0.8
1.0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oC
Tj=150oC
200
400
600
800
1000
2345
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
I
D=0.4A
TA=25oC
AP1332GEU-HF
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
td(on) trtd(off)tf
VDS
VGS
10%
90%
Q
VG
4.5V
QGS QGD
QG
Charge
0
2
4
6
8
10
0.0 0.4 0.8 1.2 1.6 2.0 2.4
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
ID=0.6A
VDS =10V
VDS =12V
V DS =16V
10
100
1357911
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthja)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
ID (A)
TA=25oC
Single Pulse
100us
1ms
10ms
100ms
DC
