ee Discrete POWER & Signal FAIRCHILD Technologies ee SEMICONDUCTOR m E SOT-23 B Mark: FD PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maxi mum Rati ngs* TA = 25C unless otherwise noted Symbol Parameter Value Units VcEo Collector-Emitter Voltage 30 Vv Voso Collector-Base Voltage 40 Vv Veo Emitter-Base Voltage 10 Vv Io Collector Current - Continuous 1.2 A Ty, Tstg Operating and Storage Junction Temperature Range -55 to +150 C NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Symbol Characteristic Max Units *BCV26 Pp Total Device Dissipation 350 mW Derate above 25C 2.8 mWw/C Resa Thermal Resistance, Junction to Ambient 357 C/W * Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. 41997 Fairchild Semiconductor Corporation 92AD4 Electrical Characteristics PNP Darlington Transistor (continued) TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min | Typ | Max |Units OFF CHARACTERISTICS Vipryceo Collector-Emitter Breakdown Voltage lo = 10 mA, Ip =O 30 Vv Vipryco Collector-Base Breakdown Voltage lo = 10 pA, Ie = 0 40 Vv VieR)EBO Emitter-Base Breakdown Voltage le = 100 nA, Ip =O 10 Vv leso Collector-Cutoff Current Vop = 30 V, IE =0 0.1 nA leBo Emitter-Cutoff Current Vep=10V, Ilo =0 0.1 uA ON CHARACTERISTICS hee DC Current Gain lo = 1.0 mA, Voge = 5.0 V 4,000 Io = 10 mA, Voce = 5.0 V 10,000 Io = 100 mA, Voge = 5.0 V 20,000 VeeEsat) Collector-Emitter Saturation Voltage Ip = 100 mA, Ig = 0.1 mA 1.0 Vv Veesaty Base-Emitter Saturation Voltage lop = 100 mA, Ip = 0.1 mA 1.5 Vv SMALL SIGNAL CHARACTERISTICS fr Current Gain - Bandwidth Product Io = 30 MA, Voge = 5.0 V, 220 MHz f = 100 MHz Cc Collector Capacitance Vop = 30 V, le = 0, f = 1.0 MHz 3.5 pF Typical Characteristics Typical Pulsed Current Gain vs Collector Current Voge =5V 0.01 0.1 I- COLLECTOR CURRENT (A) h,,.- TYPICAL PULSED CURRENT GAIN (K) for) eS n Veesar7 COLLECTOR EMITTER VOLTAGE (V) So 2 2 Collector-Emitter Saturation Voltage vs Collector Current B = 1000 0.01 0.1 1 |, - COLLECTOR CURRENT (A) 92AD4 PNP Darlington Transistor (continued) Typical Characteristics (continued) Base-Emitter Saturation Voltage vs Collector Current nm B = 1000 a iy for) eS n Veesar7 BASE EMITTER VOLTAGE (V) 0.01 0.1 1 I- COLLECTOR CURRENT (A) o 2 2 Collector-Cutoff Current vs. Ambient Temperature < 100 SSS] FV =15V 5 - CB 5 cc ec 3 = 5 = Ee Oo a ot | { i { i { i { | 20.01 | I | I | I | I | ~ 25 50 75 100 12 T,: AMBIENT TEMPERATURE (C) Base Emitter ON Voltage vs Collector Current nm a iy for) Voe=5V eS n 0.01 0.1 1 I,- COLLECTOR CURRENT (A) Vecon > BASE EMITTER ON VOLTAGE (V) So 2 2 Input and Output Capacitance vs Reverse Bias Voltage 16 =1.0 nm CAPACITANCE (pF) f 0.1 1 10 100 REVERSE VOLTAGE (V) Power Dissipation vs Ambient Temperature P,,- POWER DISSIPATION (mW) 2 o@ a 8 & 8 & oO oO oO oO oO oO oO oO 0 256 50 TEMPERATURE (C) 100 125 150 92AD4 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ISOPLANAR CoolFET MICROWIRE CROSSVOLT POP E?CMOS PowerTrench FACT qs FACT Quiet Series Quiet Series FAST SuperSOT-3 FASTr SuperSOT-6 GTo SuperSOT-8 HiSeC TinyLogic DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or This datasheet contains the design specifications for In Design product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.