TELEFUNKEN Semiconductors TE13004D • TE13005D
Rev. A1: 01.05.1995 1 (9)
Silicon NPN High Voltage Switching Transistor
Features
D
Monolithic integrated C-E-free-wheel diode
D
HIGH SPEED technology
D
Planarpassivation
D
Very short switching times
D
Very low switching losses
D
Very low dynamic saturation
D
Very low operating temperature
D
High reverse voltage
Applications
Electronic lamp ballast circuits
Switch-mode power supplies
95 9630
Absolute Maximum Ratings
Tcase = 25°C, unless otherwise specified
Parameter Test Conditions Type Symbol Value Unit
Collector -emitter voltage TE13004D VCEO 300 V
g
TE13005D VCEO 400 V
TE13004D VCES 600 V
TE13005D VCES 700 V
Emitter-base voltage VEBO 9 V
Collector current IC6 A
Collector peak current ICM 8 A
Base current IB2 A
Base peak current IBM 4 A
Total power dissipation Tcase
x
25
°
C Ptot 57 W
Junction temperature Tj150
°
C
Storage temperature range Tstg –65 to +150
°
C
Maximum Thermal Resistance
Tcase = 25°C, unless otherwise specified
Parameter Test Conditions Symbol Value Unit
Junction case RthJC 2.2 K/W
TELEFUNKEN Semiconductors
TE13004D • TE13005D
Rev. A1: 01.05.19952 (9)
Electrical Characteristics
Tcase = 25°C, unless otherwise specified
Parameter Test Conditions Type Symbol Min Typ Max Unit
Transistor
Collector cut-off current VCE = 600 V TE13004D ICES 50
m
A
VCE = 700 V TE13005D ICES 50
m
A
VCE = 600 V; Tcase = 150
°
C TE13004D ICES 0.5 mA
VCE = 700 V; Tcase = 150
°
C TE13005D ICES 0.5 mA
Collector-emitter break- IC = 100 mA; L = 125 mH; TE13004D V(BR)CEO 300 V
down voltage (figure 1)
C;;
Imeasure = 100 mA TE13005D V(BR)CEO 400 V
Emitter-base breakdown
voltage IE = 1 mA V(BR)EBO 9 V
Collector-emitter
saturation voltage IC = 2 A; IB = 0.4 A VCEsat 0.5 V
Base-emitter saturation
voltage IC = 2 A; IB = 0.4 A VBEsat 1.6 V
DC forward current VCE = 2 V; IC = 10 mA hFE 10
transfer ratio VCE = 2 V; IC = 1 A hFE 10
VCE = 2 V; IC = 4 A hFE 4
Dynamic saturation IC = 2 A; IB = 0.2 A, t = 1
m
s VCEsatdyn 2.5 V
y
voltage IC = 2 A; IB = 0.2 A, t = 3
m
s VCEsatdyn 0.6 V
Gain bandwidth product VCE = 10 V; IC = 500 mA;
f = 1 MHz fT4 MHz
Free-wheel diode
Forward voltage IF = 2 A VF1.2 1.5 V
Turn-on transient peak
voltage IF = 2 A; diF/dt = 10 A/
m
s VFP 4 5 V
Reverse recovery
current IF = 2 A; diF/dt = 5 A/
m
s;
VS = 200 V IRM 4 A
TELEFUNKEN Semiconductors TE13004D • TE13005D
Rev. A1: 01.05.1995 3 (9)
Switching Characteristics
Tcase = 25°C, unless otherwise specified
Parameter Test Conditions Type Symbol Min Typ Max Unit
Resistive load (figure 2)
Turn on time IC = 2 A; IB1 = –IB2 = 0.4 A; ton 0.25 0.4
m
s
Storage time
C;B1 B2 ;
VS = 125 V ts1.5 2.5
m
s
Fall time tf0.15 0.3
m
s
Inductive load (figure 3)
Storage time IC = 2 A; IB1 = 0.4 A;
L = 200
m
H; V l= 300 V;
ts1.2 2
m
s
Cross over time
L
=
200
m
H
;
V
clamp =
300
V
;
–VBE = 5 V; Tcase = 100
°
Ctc0.4 0.7
m
s
Free-wheel diode
Reverse recovery
time IF = 0.5 A; IR = 1 A;
iR = 0.25 A trr 0.7 1
m
s
Forward recovery
time IF = 2 A; diF/dt = 10 A/
m
s tfr 0.4
m
s
Reverse recovery IF = 2 A; –diF/dt = 5 A/
m
s trr 1.1
m
s
y
time
F;F
m
tIRM 0.9
m
s
VFP
100%
110%
tfr
VF
t
95 9666
Figure 1. Turn on transient peak voltage
TELEFUNKEN Semiconductors
TE13004D • TE13005D
Rev. A1: 01.05.19954 (9)
+
3 Pulses
94 8863
tp
T
+
0.1
tp
+
10 ms
VS2
+
10 V
IB
w
IC
5ICLC
VS1
+
V(BR)CEO
I(BR)R 100 m
W
IC
VCE
V(BR)CEO
Imeasure
0to30V
Figure 2. Test circuit for V(BR)CE0
0t
IC
VCE
RC
VCC
IB
VBB
RB
IB1
94 8852
+
(1)
(1) Fast electronic switch
IBIB1
–IB2
IC
0.9 IC
0.1 ICt
ts
toff tf
tr
td
ton
Figure 3. Test circuit for switching characteristics – resistive load
TELEFUNKEN Semiconductors TE13004D • TE13005D
Rev. A1: 01.05.1995 5 (9)
0
0.9 IC
0.1 IC
t
IC
VCE VCC
IB
VBB
RB
IB1 Vclamp
+
LC
94 8853
(1)
(1) Fast electronic switch
(2) Fast recovery rectifier
(2)
IB
IB1
–IB2
IC
t
tr
ts
Figure 4. Test circuit for switching characteristics – inductive load
TELEFUNKEN Semiconductors
TE13004D • TE13005D
Rev. A1: 01.05.19956 (9)
Typical Characteristics (Tcase = 25
_
C unless otherwise specified)
95 10602
0 25 50 75 100
0.001
0.01
0.1
1
10
100
P – Total Power Dissipation ( W )
tot
Tcase ( °C )
150
125
2.2 K/W
12.5 K/W
25 K/W
50 K/W
RthJA = 85 K/W
Figure 5. Ptot vs.Tcase
V - Collector Emitter Saturation Voltage (V)
IB - Base Current (A)95 9789
0.01 0.1 1 10
10
1
0.1
0.01
CEsat
Tcase = 25°C
IC = 0.5A 1A
2A 4A
Figure 6. VCEsat vs. IB
h - Forward DC Current Transfer Ratio
IC - Collector Current (A)95 9785
FE
0.01 0.1 1 10
100
10
1
Tcase = 25°C
VCE = 2V
10V
5V
Figure 7. hFE vs. IC
1 10 100 1000
0.01
0.1
1
10
100
I – Collector Current ( A )
C
VCE – Collector Emitter Voltage ( V )
10000
95 10965
tp/T
v
0.01
Tcase = 25°C
tp=10
m
s
50
m
s
100
m
s
500
m
s
5ms
1ms
DC
TE13004D TE13005D
Figure 8. IC vs. VCE
V - Base Emitter Saturation Voltage (V)
IB - Base Current (A)95 9788
BEsat
10
1
0.1 1010.10.01
IC = 8A
4A
2A
1A
0.5A
Tcase = 25°C
Figure 9. VBEsat vs. IB
h - Forward DC Current Transfer Ratio
VCE - Collector Emitter Voltage (V)95 9786
FE
1086420
25
20
15
10
5
0
Tcase = 25°C
IC = 4A
2A
1A
0.5A
Figure 10. hFE vs. VCE
TELEFUNKEN Semiconductors TE13004D • TE13005D
Rev. A1: 01.05.1995 7 (9)
01234
0.01
0.1
1
10
t ,t – Switching Times ( s )
s
IC – Collector Current ( A )
5
95 9908
f
m
ts
tf
hFE = 5
IB1 = –IB2
Tcase = 25°C
R–load
Figure 11. ts, tf vs. IC
01234
0.01
0.1
1
10
t ,t – Switching Times ( s )
s
5
95 9910
f
m
IC – Collector Current ( A )
ts
tf
hFE = 5
IB1 = –IB2
Tcase = 25°C
L–load
Figure 12. ts, tf vs. IC
0.01 0.1 1 10
0.01
0.1
1
10
Z – Thermal Resistance for Pulse Cond. ( K/W )
thp
tp – Pulse Length ( ms )
100
95 10962
DC
tp/T = 0.5
0.2
0.1
0.01
0.02
0.05
Figure 13. Zthp vs. tp
01234
0.01
0.1
1
10
t ,t – Switching Times ( s )
s
–IB2/IB1
5
95 9909
f
m
ts
tf
IC = 2A
IB1 = 0.4A
Tcase = 25°C
R–load
Figure 14. ts, tf vs. –IB2/IB1
01234
0.01
0.1
1
10
t ,t – Switching Times ( s )
s
–IB2/IB1
5
95 9911
f
m
ts
tf
IC = 2A
IB1 = 0.4A
Tcase = 25°C
L–load
Figure 15. ts, tf vs. –IB2/IB1
TELEFUNKEN Semiconductors
TE13004D • TE13005D
Rev. A1: 01.05.19958 (9)
Dimensions in mm
94 9184
technical drawings
according to DIN
specifications
4.8
4.4
1.40
1.27
2.70
2.35
0.52
0.40
0.85
0.65
1.5
0.9
2.64
2.44
1.5
1.2
4.8
4.3
1.3
1.0
10.4
9.8 3.8
3.5
2.9
2.7
16.0
15.2
13.6
12.2
E
B
C
Collector connected with metallic surface
Standard Plastic Case
14A 3 DIN 41 869
JEDEC TO 220
6.7
5.8
TELEFUNKEN Semiconductors TE13004D • TE13005D
Rev. A1: 01.05.1995 9 (9)
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
