POWEREX CM50E3Y-24E Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272 OUTLINE DRAWIKG S -_M5 THD 13 TYP C2B10-__,> 4 of lg I 1 e}--0 C1 CMS50E3Y-24E Outline Drawing Dimensions Inches Millimeters A 3.70 94.0 B 3.150+0.01 80.040.25 Cc 1.57 40.0 D 1.34 34.0 E 1.22 Max. 31.0 Max. F 0.90 23.0 G 0.85 21.5 H 0.79 20.0 J 0.71 18.0 K 0.67 17.0 L 0.63 16.0 M 0.51 13.0 N 0.47 12.0 P 0.28 7.0 Q 0.265 Dia. Dia. 6.5 R 0.16 4.0 S$ M5 Metric M5 Mi 7294b21 OOO?ebs 649 CMS50E3Y-24E Chopper IGBTMOD E-Series Module 50 Amperes/1200 Volts Chopper IGBTMOD E-Series Module 50 Amperes/1200 Volts Description: Powerex Chopper IGBTMOD Modules are designed for use in switching applications. Each module consists of one IGBT Transistor having a reverse-con- nected super-fast recovery free- wheel diode and an anode-collec- tor connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assem- bly and thermal management. Features: L] Low Drive Power [] Low Vee cary [] Discrete Super-Fast Recovery (150ns) Free-Wheel Diode [] High Frequency Operation (15-20kHz) [] Isolated Baseplate for Easy Heat Sinking Applications: {[_] DC Motor Contro! L] Boost Regulator Ordering Information: Example: Select the complete part module number you desire from the table below -.e. CM50E3Y-24E is a 1200V (VeEs), 50 Ampere Chopper IGBTMOD Power Module. Type = Current Rating Vees Amperes Volts (x 50) CM 50 24 C-25 POWEREX Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272 CMS50E3Y-24E Chopper IGBTMOD E-Series Module 50 Amperes/1200 Volts Absolute Maximum Ratings, T= 25 C unless otherwise specified Ratings Symbol CMS0E3Y-24E Units Junction Temperature T, ~40 to 150 C Storage Temperature T stg 40 to 125 C Collector-Emitter Voltage (G-E SHORT) Voces 1200 Volts Gate-Emitter Voltage Vees +20 Volts Collector Current Io 50 Amperes Peak Collector Current lom 100 Amperes Diode Forward Current lem 50 Amperes Diode Forward Surge Current tem 100 Amperes Power Dissipation Py 400 Watts Max. Mounting Torque M5 Terminal Screws - 17 in-ib Max. Mounting Torque M6 Mounting Screws - 26 in-Ib Module Weight (Typical) - 190 Grams V Isolation Vams 2500 Volts * Pulse width and repetition rate should be such that device junction temperature does not exceed the davice rating. Static Electrical Characteristics, T= 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current loEs Voce = Voces: Vag = OV - - 1.0 mA Gate Leakage Current loes Voge = Vees Voce = OV - - 0.5 pA Gate-Emitter Threshold Voltage Veith) Ig = SMA, Voge = 10V 3.5 5.0 6.5 Volts Collector-Emitter Saturation Voltage VoE(sat) Io = 50A, Veg = 15V - = 4.0** Volts Ig = 50A, Vege = 15V, T) = 150C - - 4.0** Voits Total Gate Charge Qg Voc = 600V, Ig = 50A, Vag = 15V - 530 - nc Diode Forward Voltage Vem Ip = 50A, Vge = OV = - 2.5 Volts ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, T= 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance Cis - - 20 nF Output Capacitance Coos Voge = OV, Vog = 10V, f= 1MHz - ~ 6 nF Reverse Transfer Capacitance Cres - ~ 4 nF Resistive Turn-on Delay Time taron) - - 100 ns Load Rise Time t, Voc = S00V, I, = 50A, - - 200 ns Switch Times Tum-off Delay Time taor Voe1 = Voge = 15V, Rg = 6.32 = = 200 ns Fall Time % - - 400 ns Diode Reverse Recovery Time ty tg = SOA, di,-/dt = -100A/us - - 300 ns Diode Reverse Recovery Charge Qh IE = 50A, di_-/dt = -100A/ys - 4.1 - uC Thermal and Mechanical Characteristics, T= 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Ping-c) Per IGBT - - 0.31 CW Thermal Resistance, Junction to Case Ring-c) Per Free Wheel Diode - - 0.70 CW Contact Thermal Resistance Rincet) Per Half Module - - 0.15 Cw C-26 mM! 7294621 0007264 515 Wa Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272 CMS50E3Y-24E Chopper IGBTMOD E-Series Module 50 Amperes/1200 Volts COLLECTOR-EMITTER OUTPUT CHARACTERISTICS TRANSFER CHARACTERISTICS SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) (TYPICAL) 100 Vog = 10V _ Vae = 15V a g T,= 25C @ T; = 125C & 80 & = 1,5 125C g = z ae = 60 2 ES 5 B Goo w Ww ag c xc Og rc ge 5 = 54 3 40 3 us & 8 88 e 5 : a 20 2 2 Oo oO < & ie} 0 2 4 6 & 10 0 4 8 12 16 20 0 20 40 60 80 100 COLLECTOR-EMITTER VOLTAGE, Vee, (VOLTS) GATE-EMITTER VOLTAGE, Vee, (VOLTS) COLLECTOR-CUARENT, Ic, (AMPERES) COLLECTOR-EMITTER FREE-WHEEL DIODE SATURATION VOLTAGE CHARACTERISTICS FORWARD CHARACTERISTICS CAPACITANCE VS. Vog (TYPICAL) PICAL) (TYPICAL) 102 105 e ae # & Qo Es z y 104 a > o Ww = . gg = 101 d Se z a w c 3 a3 3 < 88 E E 103 < <x Pp Ig = 20A a z a Vag = OV f= MHz 400 102 0 4 8 12 16 20 1.0 14 1.8 2.2 2.6 3.0 10-1 109 101 102 GATE-EMITTER VOLTAGE, Vee. (VOLTS) EMITTEA-COLLECTOR VOLTAGE, Veg, (VOLTS) COLLECTOR-EMITTER VOLTAGE, Voge. (VOLTS) -BRIDGE SWITCHITS CHEE CE ERISTICS REVERSE RECOVERY CHARACTERISTICS (TYPICAL) (TYPICAL) GATE CHARGE, Vge 103 108 102 wg ct . - wo g 23 y, = =s z tdiorty ui z5 Z> Vo = 400V 2 i 9 @ 102 Bw 102 101 3 # Vee = z 8 >os z= g > 6 uy wo = BE Veg = 600V i aS Vag = 215V & wh Rg = Ge he 3 oc 101 101 100 100 101 102 10 10% 102 0 200 400 600 800 1000 COLLECTOR CURRENT, Ic, (AMPERES) EMITTER CURRENT, Ie, (AMPERES) GATE CHARGE, Qa, (nC) C-27 WE 7294621 O0072eb5 451 POWEREX Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272 CMS0E3Y-24E Chopper IGBTMOD E-Series Module 50 Amperes/1200 Volts TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 2 101! N 8 z =0.31C/W # 100 : 2 3 # 101 10-1 & irr] 2 E102 102 i $103 103 Zi = Fly, * (NORMALIZED VALUE) 105 104 103 TIME, (8) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (DIODE) = a = . = Q Q 1071 2 10-2 ALIZED TRANSIENT THERMAL IMPEDANCE, Zin5.<) 3 tp = 103 103 Zi = Ry (NORMALIZED VALUE) 105 104 103 TIME, (s) SWITCHING TIME TEST CIRCUITS & WAVEFORMS Veo Io <_- N L SHORT RLoOAD at op! = 7 Yee +VGE1 Re +VGeE1 Re Ne ~tfog_ Ne -~-t-lde lc oo Vv aR -VGE2 GE2 t RESISTANCE LOAD SWITCHING TEST CIRCUIT VGE Lew 0 > t Eb \ & tr dig/dt > Ic [th 90% >t 10% r 05 ke 0 t >t ' " ta(otf ~ = ta(on) tr of tf Onn = Mg lero ter SWITCHING TIME TEST WAVEFORMS tr, Qrr WAVEFORMS C-28 Me 7294be] OOO?ebb 396 HALF-BRIDGE SWITCHING TEST CIRCUIT