SIEMENS FEATURES * Internal Rg for High Stability SINGLE CHANNEL IL66 SERIES DUAL CHANNEL ILD66 SERIES QUAD CHANNEL ILQ66 SERIES PHOTODARLINGTON OPTOCOUPLER Package Dimensions in Inches (mm) IL68 (Single Channel) * Current Transter Ratio is Tested at 2.0 mA and 0.7 mA Input IL/ILD/ILQ66 Series: ~1, 100% min. at l-=2 mA, Veg=10 ~2, 300% min. at lp=2 mA, Vog=10 V ~3, 400% min. at [p=0.7 MA, Vog=10 4, 500% min. at lp=2 mA, Voe=5 V Four Available CTR Categories per Package Type * BVceg>60 V * Standard DIP Packages * Underwriters Lab File #E52744 * (2, VDE 0884 Available with Option 1 DESCRIPTION IL66, ILD66, and ILQ66 are optically coupled isolators employing Gallium Arsenide infrared emitters and silicon photodarlington detec- tors. Switching can be accomplished while maintaining a high degree of isclation between driving and load circuits, with no crasstalk between channels. Maximum Ratings Emitter (Each Channel) Peak Reverse Voltage ee 6V Continuous Forward Current .. 60 mA Power Dissipation at 25C .. - 100 mw Derate Linaarly from 26C ow. 1.39 mW Datector (Each Channel} Power Dissipation at 25C Ambient ........... 450 mW Derate Linearly from 25C os 2.0 mw Package ssolation Test Voltage (29 SOC) ee S906 VACRg, Total Package Power Dissipation at 25C TL6B eee tettreterett creeneiiee 250 mw ILDG6 i ee BOO MY WOBB ee 500 mw Oerata Linearly fram 25C IW66 3.3 mye ILO66 ... 2 8.99 MAPS ILQ6E... 6.67 mWeC Creepage oe 7 rain mm Clearance oo FMM MT Comparative Tracking Index oc eeee 475 Isolation Resistance Vig=S00 V, Tas25C occ 210"? 4) Vint B00 V, Tas 100 ee 210" O .. 65C to + 126C 66C lo + 100C Storage Temperature... Operating Temperature ............... Lead Soldering Time at 260C a oh ty. Pin One 1.0. Anode 248 (6.30) 256 (6.50) Cathode Wy Ne 995 (8.50 . 343 (8.70 - - 039 7) |_.300 (7.62) (1.00) hs 4 TYP. min. | {Ria a 150 (3.81 Seal yp . i hyp. Wigan 018 (0.48) 020 (.051} min 1010 (25) 4- " B23 10 gle on (0-80) ion 3 035 (0.90) 300 (7.62) 100 (2.54) Typ. 347 (8.82) (L066 (Dual Channel -P66 (8.81) Pin One 1D. . -255 (6.46) Gathoda fo + Cathode Anode [g/t 379 (9.63 li Anode [7] d90 (9.91) .030 (.76) = 045 (1.14) 130 (3.30) 150 (2.81) 1-305 Typ. {7.78} Typ ff " Typ. | ip* town I 394 a met "135 (3.43) O16 (.46} 030 {.76 } . b40 (1.02} 008 .20) 022 (56) o12 tao} 100 (2.54) Typ. O12 Anode (7 f- ILQ86 {Quad Channel} Cathode [ Pin a One Cathode |3 LB AeA ema Anode [4] 255 (6.48) Anods [5 268 (8.51) Cathode [gl fact ka cl ta od ha Cathode [7] 7 719 (19.77) - 790 (20.07) Anoste [8 030 (78) ey fs 048 1.14) 130 (3.20) a 150 (3.81) ty 11 ci UAL PU AUR Typ t ~o| 030 (76) 018 (46) 040 (1.02) og2 ( 65) J} 100 (2.54) Typ. 012 (30) 5-68 Electrical Characteristics (7,=25C) Symbol Min. Typ. Max. GaAs Emitter Forward Voltage Ve 1.25 15 Reverse Current la o1 10 Capacitance Co 25 Photodariington Breakdown Voltage Collector-Emitter BYocro 60 Collector-Base (IL66) BVego 60 Collector-Emitter Leakage Current Iceo 1.0 100 Capacitance Collector-Emitter 3.4 Coupted Characteristics Current Transfer Ratio CTR ILALD/ILQ66-1 100 400 ILALDAILOQGS-2 300 500 ILALDALOQ66-3 400 500 ILALD/ILQ66-4 500 756 Coliactor-Emitter Saturation Voltage Veesat ag 10 Rise Time -1, -2, -4 ta 200 Fall Time -1, -2, -4 te 200 Rise Time -3 te 200 Fall Time -3 te 200 Figure 1, Forward voltage versus forward current 14 1.3 a= -55C 1.2 1 To 09 08 07 Ta = 26C VF - Forward Voltage - V A 1 10 IF - Forward Current - mA 100 Figure 3. Normalized non-saturated and saturated CT Ree versus LED currant 12 Normalized to: Ta = 25C Vee=5 IF = 10 1.0 0.8 0.6 0.4 0.2 NCTRce - Normalized CTRce 0.0 | 1 10 100 IF - LED Current - mA 1000 5-69 Unit Condition v Ip=20 mA HA Vax6.0V pF Vys0V v lo=1 mA, Ip=0 Vv Ip= 10 pA nA Vop=80 V, Ip=0 pF Vogal V % Ipe2 MA, Vce=10 % Ipe2 MA, Vog=10 % Ip=0.7 MA, Voe=t0 % ips2 MA. Vog=5 v foe TO mA, = 1 mA us Veo=10 ps Ip=2 mA, Re= 100 &2 _ us [p=0.7 mA gs ps Voc=10 V, Rp=100 12 gk 5 eg oo Figure 2. Normalized non-saturated and saturated CTRcee versus LED current 20 T 2 Normalized to: Ta = 25C E 15 [-Vee =5 a Vee =5V i iF=2mA Lo ce = = 1.0 E XY = 05 L $ A Vee=1 x & 0.0 = 4 1 10 100 IF - LED Current - mA Figure 4. Non-saturated and saturated collector emitter current versus LED current 10000 Vee =5V 5 1000 = E 100 v 5 10 Be 6 h Os 4 8 oo O04 ra 1 10 100 IF - LED Current - mA ILALDALOBS Figure 5. Collector-hase photocurrent veraus LED current 1000 Ta = 25C 2 100 - 10 4) 3 f | ___ 3 a te pa Poarerai 4 1 10 100 IF - LEO Current - mA Figure 7. Non-saturated and saturated HFE versus LED current Jee - Collector-emitter current - mA Figure 6. Collector-emitter current veraua LED current 10000 1000 100 10 1 A 01 001 a=25C Vee =8V Voe=1 A 1 10 100 1000 Ib - Base Currant - ps Figure 8. High/low propagation delay versus collector load resistance and LED current 25000 T 25C * s PBS A. Ta= & 20000 yf vou ceV 40 =8V Pp F ~ Vth= 1.5V 2 15000 F 7 \ \ * 30 < 10000 F & 20 t cack \ a 5000 + Vea -1~ = 10 OL. VA 1 aS nasyl z 0 A 1 10 100 1600 o 5 10 15 20 tb - Base Current - pA IF - LED Current - mA Figure 9. Low/high propagation delay versus Figure 10. Switching Waveform collector load resistance and |.E0 current 150 lp 125 % 100 a7 5 Ta = 26C re 50f..vec = 5 V Vo tp g Vih=1.5 L tev ' 26 2 0 Vyy2 9.5 V 0 5 10 15 20 IF - LED Currant - mA PtRHL btgepe I Figure 11. Switching Schematic Vecs10 Fe10 KHz, " OF=50% = 2A, a Vo HX | AW $ ILAL DHILQ6E 5-70