MONACO ve.1<5. 1177 BLUE HERON BLVD. @ RIVIERA BEACH, FLORIDA 33404 TEL: (407) 848-4311 @TLX: 51-3435 @FAX: (407) 863-5946 PRODUCT CATALOG N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS 6O0O0V, 4.0A, 2.19 SDF4N60 JAA SDF4N60 JAB PARAMETER SYMBOL UNITS Drain-source Volt.(1) VDSS 600 Vde Drain-Gate Voltage VDGR 0 Vd (Res=1.0Ma) (1) 600 C Gate-Source Voltage Continuous . VGS +20 Vdc Prain seccgn! Continuous ID 4.0 Adc Drain Current Pulsed(3) 10M 16 A Total Power Dissipation PD 7S W Power Dissipation Derating > 25C 0.6 W/C Operating & Storage Temp. | TU/Tsig -55 TO +150 C Thermal Resistance RthJc 1.7 C/W Max.Lead temperature TL 300 C ELECTRICAL CHARACTERISTICS Te =25c UNLESS OTHER- WISE SPECIFIED FEATURES @ RUGGED PACKAGE @ HI-REL CONSTRUCTION @ CERAMIC EYELETS @ LEAD BENDING OPTIONS @ COPPER CORED S2 ALLOY PINS @ LOW IR LOSSES @ LOW THERMAL RESISTANCE @ OPTIONAL MIL-S-19500 SCREENING SCHEMATIC (0) [TERMINAL CONNECTIONS G H Ke 1] GATE 1] DRAIN +* 2]DRAIN |2| SOURCE (s) [3[source | 3] GATE STANDARD BEND CONF IGURAT IONS J A A S 2 3 wo U" | ) 23 1 1 u D | 1 2 (CUSTOM BEND OPTIONS AVAILABLE) PARAMETER SYMBOL TEST CONDITIONS MINJTYP | MAX JUNITS Drain-source VGS=OV Breakdown Vol t.\ViBR)0SS ID=250 wa 600] - Vv Gate Threshold _ _ Voltage VGS(TH)|VOS=VGS_ ID=250 yA |2.0] - |4.5] V ate Source = Leakage IGSS |VGS=+20 V ~ - |100] nA Zero Gate VDS=MAX.RATING vGS=0] - | |250| HA Voltage Drain | IDSS /ypS=0.8 MAX.RATING Current VGS=0 TJ=125C - - 1000 HA Static Drain- Source On-State|Rps(on)| YE9=19 V ~|- . QO Resistance(1 (ON) 1D=2.0A 2.1 Forward Trans- vOS 2 15 V Conductance (2) gfs | \ps-2.0a 2.5] - - |s(v) Input Capacitance] CISS ~ 1720] - pF Output Capacitance| COSS |VGS=OV VDS=25 V - 80 - pF Reverse Transfer f=1.0 MHz FE Capacitance CRSS ~ 30 ~ Pp Turn-On Delay |td(on)|ypp=300v 202200 ~ | - | 30] ns Rise Time tr (hosrey tehi ; - | - [| 35 [ns Turn-Off Delayltd(off)| are tesentially indepen= - - 85 | ns Fall Time rv dent of operating temp.) [_ = 55 | ns Total Gate Charge Gate-Source Plus] Qg - - 40 nc ate-Drain VGS=10N, ID=4 OA Gate-Source DS=0.8 MAX.RATING Charge Qas (Gate charge is essenti- ~ ~ 10 nc = + a y independen 6 e Cueto D Qgd operating temperature) _ _ is | nc Charge SOURCE-DRAIN DIODE RATINGS & CHARACT.Tc=25C (WES OTHER. PARAMETER SYMBOL] TEST CONDITIONS MIN] TYP .[MAX.|UNITS Continuous wp: Source Current] IS Modified MOSFET - | - |4.0] A (Body Diode) symbol showing the integral reverse Pulse Source P-N junction recti- Current (Body | ISM [fier (See schematic)| - | - | 16] A Diode) (1) Diode Forward (F=4.0A VGS=0V _ - Voltage (2) | VSO |te=+25%c 1.5] V Te=*25 C Reverse Recovery Time trr | IF=4.0A ~ |600); - 7 As di/dt=100A/ WS STANDARD BEND CONF IGURAT IONS JAB (CUSTOM BEND OPTIONS AVAILABLE) | 2} TJ = 25C to 150C 3 Pulse test: Pulse Width <300nS, Duty Cycle <2%. Repetitive Rating: Pulse Width limited By Max junction Temperature. A31