TECHNICAL DATA
MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE AND FLATPACK
SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/559
Devices
Qualified Level
2N6989
2N6989U 2N6990
JAN
JANTX
JANTXV
JANS
MAXIMUM RATINGS (1)
Ratings Symbol Value Units
Collector-Emitter Voltage (3) VCEO 50 Vdc
Collector-Base Voltage (3) VCBO 75 Vdc
Emitter-Base Voltage (3) VEBO 6.0 Vdc
Collector Current (3) IC 800 mAdc
Total Power Dissipation @ TA = +250C
2N6989(2)
2N6989U(2)
2N6990(2)
PD
1.5
1.0
0.4
W
Operating & Storage Junction Temperature Range Top, Tstg -65 to +200 0C
1) Maximum voltage between transistors shall be ≥ 500 Vdc
2) Derate linearly 8.57 mW/0C above TA = +250C for 2N6989 and 2N6989U
Derate linearly 2.286 mW/0C above TA = +250C for 2N6990
Ratings apply to total package.
3) Ratings apply to each transistor in the array.
TO- 116*
2N6989
20 PIN LEADLESS*
2N6989U
14 PIN FLAT PACK*
2N6990
*See appendix A for package
outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc V(BR)CEO 50 Vdc
Collector-Base Cutoff Current
VCB = 60 Vdc
VCB = 75 Vdc; Ic= 10 µAdc
ICBO 10
10 ηAdc
µAdc
Emitter-Base Cutoff Current
VEB = 4.0Vdc
VEB = 6.0Vdc; Ic= 10 µAdc
IEBO 10
10 ηAdc
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N6989, 2N6990 JAN, SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (4)
Forward-Current Transfer Ratio
IC = 0.1 mAdc, VCE = 10 Vdc
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
IC = 500 mAdc, VCE = 10 Vdc
hFE
50
75
100
100
30
325
300
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
VCE(sat)
0.3
1.0
Vdc
Base-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
VBE(sat)
0.6
1.2
2.0
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz
hfe
2.5
8.0
Forward Current Transfer Ratio
IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz hfe 50
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 8.0 pF
Input Capacitance
VEB = 0.5 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cibo 25 pF
(4) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
