1KAB-E Series
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Revision: 24-Apr-13 1Document Number: 93559
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Single Phase Rectifier Bridge, 1.2 A
FEATURES
• Ease of assembly, installation, inventory
• High surge rating
•Compact
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
A 1.2 A diode bridge rectifier assembly designed for new
circuits and for replacement service. For printed circuit
board applications.
ELECTRICAL SPECIFICATIONS
PRODUCT SUMMARY
IO1.2 A
VRRM 100 V to 1000 V
Package D-38
Circuit Single Phase Bridge
D-38
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IO1.2 A
IFSM
50 Hz 50
A
60 Hz 52
I2t
50 Hz 17.7
A2s
60 Hz 16.1
VRRM 100 to 1000 V
TJ- 55 to 150 °C
VOLTAGE RATINGS
CROSS REFERENCE
VRRM, VRSM
(V)
VRMS
(RECOMMENDED)
(V)
MAXIMUM (1)
LOAD CAPACITANCE
(μF)
MINIMUM
SOURCE RESISTANCE
(SEE FIGURE 3)
()
PART
NUMBER DIN CODE
1KAB10E B40C1000 100 40 5000 0.5
1KAB20E B80C1000 200 80 3300 0.8
1KAB40E B125C1000 400 125 1600 1.5
1KAB60E B250C1000 600 250 1200 2.6
1KAB80E B380C1000 800 380 800 3.0
1KAB100E B500C1000 1000 500 600 5.0
1KAB-E Series
www.vishay.com Vishay Semiconductors
Revision: 24-Apr-13 2Document Number: 93559
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) I2t for time tx = I2t x tx
Fig. 1 - Average (DC) Output Current vs.
Maximum Allowable Ambient Temperature
Fig. 2 - Maximum Non-Repetitive Surge Current vs.
Pulse Train Duration (f = 50 Hz)
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum DC output current IO
TA = 45 °C, resistive or inductive load 1.2
A
TA = 45 °C, capacitive load 1.0
Maximum peak one cycle,
non-repetitive surge current IFSM
50 Hz half cycle sine wave
or 6 ms rectangular pulse Following any rated load
condition, and with rated
VRRM applied following surge
50
A
60 Hz half cycle sine wave
or 5 ms rectangular pulse 52
Maximum I2t capability for fusing I2t
t = 10 ms Rated VRRM applied
following surge, initial
TJ = 150 °C
12.5
A2s
t = 8.3 ms 11.3
t = 10 ms VRRM = 0 following surge,
initial TJ = 150 °C
17.7
t = 8.3 ms 16.1
Maximum I2t capability for fusing I2t (1) t = 0.1 to 10 ms, VRRM following surge = 0 177 A2s
Maximum peak forward voltage per leg VFM IO = 1.2 A (1.88 Apk)1.1V
Typical peak reverse current per leg IRM
TJ = 25 °C, at rated VRRM 10
μA
TJ = 150 °C, at rated VRRM 500
Operating frequency range f 40 to 2000 Hz
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL VALUES UNITS
Operating junction and storage temperature range TJ, TStg - 40 to 150 °C
Approximate weight
3g
0.1 oz.
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
0 20 40 60 80 100 120 140 160
Average Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Capacitive load
Resistive, inductive load
Maximum Peak Output Current (A)
Equal Amplitude Pulse Train Duration (s)
50
40
30
20
10
0
10-2 10-1 110
60
Following any rated load
condition and with rated
VRRM applied following surge
1KAB-E Series
www.vishay.com Vishay Semiconductors
Revision: 24-Apr-13 3Document Number: 93559
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Minimum Required Source Resistance vs.
RMS Supply Voltage and Load Capacitance
Fig. 4 - Maximum Switch-On Surge Current vs.
Surge Duration
CIRCUIT CONFIGURATION
RMS Supply Voltage (V)
Minimum Required Value of Source Resistance (Ω)
500
400
300
200
100
0
0123456
600
CL = 400 µF
CL = 600 µF
CL = 800 µF
CL = 1200 µF CL = 1600 µF
CL = 3300 µF CL = 5000 µF
CL = 7000 µF
CL = 200 µF
0.5
1
2
5
10
10-1 10 102103
1
Average Output Current (A)
Switch-On Surge Duration (s)
Resistive, inductive load
Capacitive load
Initial TJ = 45 °C
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95327
(+)
AC
AC
(-)
Document Number: 95327 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 04-Jul-08 1
D-38
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
5.1 (0.2)
5.1 (0.2)
5.1 (0.2)
Ø 0.8 (0.031)
~
~
+
-
9.5 (0.37)
9.5 (0.37)
10 (0.39)
25.4 (1.0)
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 02-Oct-12 1Document Number: 91000
Disclaimer
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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