LITE-ON SEMICONDUCTOR MBR2070CT thru 20100CT REVERSE VOLTAGE - 70 to 100 Volts FORWARD CURRENT - 20 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AB FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency High current capability, low VF High surge capacity Plastic package has UL flammability classification 94V-0 For use in low voltage,high frequency inverters,free B L TO-220AB M C D A K E PIN 1 2 3 DIM. A B C D MIN. 14.22 9.65 2.54 E 8.26 - F F whelling,and polarity protection applications G H G I MECHANICAL DATA Case : TO-220AB molded plastic Polarity : As marked on the body Weight : 0.08 ounces, 2.24 grams Mounting position : Any Max. mounting torque = 0.5 N.m (5.1 Kgf.cm) I J K J N H H L M PIN 1 3.43 6.86 9.28 12.70 6.35 14.73 2.29 0.51 0.30 3.53 3.56 2.79 1.14 0.64 4.09 4.83 1.14 1.40 2.92 2.03 N All Dimensions in millimeter PIN 2 CASE PIN 3 5.84 MAX. 15.88 10.67 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current (See Fig.1) SYMBOL MBR2070CT MBR2080CT MBR2090CT MBR20100CT UNIT VRRM VRMS VDC 70 49 70 80 56 80 90 63 90 100 70 100 V V V I(AV) 20 A Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load IFSM 150 A Voltage Rate of Change (Rated VR) dv/dt 10000 V/us TC =120 C IF=10A @ TJ =125 C Maximum Forward IF=10A @ TJ =25 C Voltage (Note 1) IF=20A @ TJ =125 C IF=20A @ TJ =25 C Maximum DC Reverse Current @TJ =25 C at Rated DC Blocking Voltage @TJ =125 C Typical Thermal Resistance (Note 2) Typical Junction Capacitance per element (Note 3) Operating Temperature Range Storage Temperature Range R0JC 0.75 0.85 0.85 0.95 0.1 100 2.0 C/W CJ 250 pF TJ -55 to +150 C TSTG -55 to +175 C REV. 6, Aug-2007, KTHC09 VF IR NOTES : 1. 300us Pulse Width, 2% Duty Cycle. 2. Thermal Resistance Junction to Case. 3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. V mA RATING AND CHARACTERISTIC CURVES MBR2070CT thru MBR20100CT AVERAGE FORWARD CURRENT AMPERES 15 10 5 RESISTIVE OR INDUCTIVE LOAD 0 50 25 75 100 125 150 FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 20 150 125 100 75 50 25 8.3ms Single Half-Sine-Wave 0 1 175 2 CASE TEMPERATURE , C FIG.3 - TYPICAL REVERSE CHARACTERISTICS 20 10 50 100 FIG.4 - TYPICAL FORWARD CHARACTERISTICS 100 100 10 TJ = 100 C 1.0 TJ = 75 C INSTANTANEOUS FORWARD CURRENT ,(A) INSTANTANEOUS REVERSE CURRENT ,(mA) 5 NUMBER OF CYCLES AT 60Hz 0.1 0.01 TJ = 25 C 0.001 10 1.0 TJ = 25 C PULSE WIDTH 300us 2% Duty cycle 0.1 0 20 40 60 80 100 120 140 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 INSTANTANEOUS FORWARD VOLTAGE , VOLTS RATED PEAK REVERSE VOLTAGE (%) FIG.6 - MAXIMUM NON REPETITIVE SURGE PEAK FORWARD CURRENT VERSUS OVERLOAD DURATION PER DIODE FIG.5 - TYPICAL JUNCTION CAPACITANCE 1000 IM, SURGE FORWARD CURRENT (A) CAPACITANCE , (pF) 160 100 140 120 100 Tj = 25 80 60 IM 40 Tj = 125 t 20 Duty=50% TJ = 25 C, f= 1MHz 0 10 0.1 1 4 10 REVERSE VOLTAGE , VOLTS 100 1E-3 1E-2 1E-1 DURATION TIME ( SEC. ) 1E+0