DISCRETE SEMICONDUCTORS DATA SHEET BYV44 series Dual rectifier diodes ultrafast Product specification October 1998 NXP Semiconductors Product specification Dual rectifier diodes ultrafast FEATURES BYV44 series SYMBOL QUICK REFERENCE DATA VR = 300 V/ 400 V/ 500 V * Low forward volt drop * Fast switching * Soft recovery characteristic * High thermal cycling performance * Low thermal resistance a2 3 a1 1 VF 1.12 V IO(AV) = 30 A k 2 GENERAL DESCRIPTION trr 60 ns PINNING Dual, common cathode, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. PIN The BYV44 series is supplied in the conventional leaded SOT78 (TO220AB) package. SOT78 (TO220AB) DESCRIPTION 1 anode 1 2 cathode 3 anode 2 tab cathode tab 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VRRM VRWM VR Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage IO(AV) Average rectified output current (both diodes conducting)1 Repetitive peak forward current per diode Non-repetitive peak forward current per diode. CONDITIONS MIN. BYV44 IFRM IFSM Tstg Tj Storage temperature Operating junction temperature Tmb 136C square wave; = 0.5; Tmb 94 C t = 25 s; = 0.5; Tmb 94 C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRM(max) - MAX. -300 300 300 300 -400 400 400 400 UNIT -500 500 500 500 V V V - 30 A - 30 A - 150 160 A A -40 - 150 150 C C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs Thermal resistance junction to heatsink Thermal resistance junction to ambient per diode both diodes conducting in free air. Rth j-a MIN. TYP. MAX. UNIT - 60 2.4 1.4 - K/W K/W K/W 1 Neglecting switching and reverse current losses. For output currents in excess of 20 A, the cathode connection should be made to the metal mounting tab. October 1998 1 Rev 1.400 NXP Semiconductors Product specification Dual rectifier diodes ultrafast BYV44 series ELECTRICAL CHARACTERISTICS characteristics are per diode at Tj = 25 C unless otherwise stated SYMBOL PARAMETER CONDITIONS VF Forward voltage IR Reverse current Qs Reverse recovery charge trr Reverse recovery time Irrm Peak reverse recovery current Vfr Forward recovery voltage IF = 15 A; Tj = 150C IF = 15 A IF = 30 A VR = VRRM VR = VRRM; Tj = 100 C IF = 2 A to VR 30 V; dIF/dt = 20 A/s IF = 1 A to VR 30 V; dIF/dt = 100 A/s IF = 10 A to VR 30 V; dIF/dt = 50 A/s; Tj = 100C IF = 10 A; dIF/dt = 10 A/s I dI F 30 F MIN. TYP. MAX. UNIT - 0.95 1.08 1.15 10 0.3 40 1.12 1.25 1.36 50 0.8 60 V V V A mA nC - 50 60 ns - 4.2 5.2 A - 2.5 - V Tmb(max) / C 88 BYV44 PF / W Vo = 0.8900 V Rs = 0.0137 Ohms dt D = 1.0 90 25 t 0.5 20 rr time 0.2 15 114 0.1 10 Q I I R s 10% I 100% tp D= tp T T rrm 0 126 138 5 Fig.1. Definition of trr, Qs and Irrm I 102 0 5 10 15 IF(AV) / A 20 t 150 25 Fig.3. Maximum forward dissipation PF = f(IF(AV)) per diode; square wave where IF(AV) =IF(RMS) x D. 20 F BYV44 PF / W Tmb(max) / C 102 a = 1.57 1.9 Vo = 0.89 Rs = 0.0137 15 2.8 2.2 114 4 time 10 126 5 138 VF V fr VF 0 time 5 IF(AV) / A 10 150 15 Fig.4. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). Fig.2. Definition of Vfr October 1998 0 2 Rev 1.400 NXP Semiconductors Product specification Dual rectifier diodes ultrafast BYV44 series trr / ns 1000 1000 Qs / nC IF=20 A IF = 20 A 100 100 1A 2A 10 10 Tj = 25 C Tj = 100 C 1 1 1 100 10 dIF/dt (A/us) Fig.5. Maximum trr at Tj = 25C and 100C; per diode 10 1.0 10 -dIF/dt (A/us) 100 Fig.8. Maximum Qs at Tj = 25C; per diode Irrm / A 10 Transient thermal impedance, Zth j-mb (K/W) 1 IF= 20 A 1 IF=1A 0.1 0.1 PD 0.01 Tj = 25 C Tj = 100 C 0.01 10 -dIF/dt (A/us) 1 0.001 1us 100 Fig.6. Maximum Irrm at Tj = 25C and 100C; per diode 50 tp D= T 10us tp T t 100us 1ms 10ms 100ms 1s pulse width, tp (s) BYV42E 10s Fig.9. Transient thermal impedance per diode Zth j-mb= f(tp) BYV74 IF / A Tj = 25 C Tj = 150 C 40 30 typ max 1 VF / V 1.5 20 10 0 0 0.5 2 Fig.7. Typical and maximum forward characteristic IF = f(VF); parameter Tj October 1998 3 Rev 1.400 NXP Semiconductors Product specification Dual rectifier diodes ultrafast BYV44 series MECHANICAL DATA Dimensions in mm 4,5 max Net Mass: 2 g 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 0,9 max (3x) 2,54 2,54 0,6 2,4 Fig.10. SOT78 (TO220AB); pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT78 (TO220) envelopes. 2. Epoxy meets UL94 V0 at 1/8". 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