PSMN015-100B /T3 - NXP SEMICONDUCTORS

DATA SH EET

Product specification October 1998

DISCRETE SEMICONDUCTORS

BYV44 series

Dual rectifier diodes

ultrafast

NXP Semiconductors Product specification

Dual rectifier diodes BYV44 series

ultrafast

FEATURES SYMBOL QUICK REFERENCE DATA

• Low forward volt drop VR = 300 V/ 400 V/ 500 V

• Fast switching

• Soft recovery characteristic VF ≤ 1.12 V

• High thermal cycling performance

• Low thermal resistance IO(AV) = 30 A

trr ≤ 60 ns

GENERAL DESCRIPTION PINNING SOT78 (TO220AB)

Dual, common cathode, ultra-fast, PIN DESCRIPTION

epitaxial rectifier diodes intended

for use as output rectifiers in high 1 anode 1

frequency switched mode power

supplies. 2 cathode

The BYV44 series is supplied in the 3 anode 2

conventional leaded SOT78

(TO220AB) package. tab cathode

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

BYV44 -300 -400 -500

VRRM Peak repetitive reverse voltage - 300 400 500 V

VRWM Crest working reverse voltage - 300 400 500 V

VRContinuous reverse voltage Tmb ≤ 136˚C - 300 400 500 V

IO(AV) Average rectified output current square wave; δ = 0.5; - 30 A

(both diodes conducting)1Tmb ≤ 94 ˚C

IFRM Repetitive peak forward current t = 25 µs; δ = 0.5; - 30 A

per diode Tmb ≤ 94 ˚C

IFSM Non-repetitive peak forward t = 10 ms - 150 A

current per diode. t = 8.3 ms - 160 A

sinusoidal; with reapplied

VRRM(max)

Tstg Storage temperature -40 150 ˚C

TjOperating junction temperature - 150 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Rth j-hs Thermal resistance junction to per diode - - 2.4 K/W

heatsink both diodes conducting - - 1.4 K/W

Rth j-a Thermal resistance junction to in free air. - 60 - K/W

ambient

a1 a2

123

tab

1 Neglecting switching and reverse current losses.

For output currents in excess of 20 A, the cathode connection should be made to the metal mounting tab.

October 1998 1 Rev 1.400

NXP Semiconductors Product specification

Dual rectifier diodes BYV44 series

ultrafast

ELECTRICAL CHARACTERISTICS

characteristics are per diode at Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VFForward voltage IF = 15 A; Tj = 150˚C - 0.95 1.12 V

IF = 15 A - 1.08 1.25 V

IF = 30 A - 1.15 1.36 V

IRReverse current VR = VRRM -1050µA

VR = VRRM; Tj = 100 ˚C - 0.3 0.8 mA

QsReverse recovery charge IF = 2 A to VR ≥ 30 V; - 40 60 nC

dIF/dt = 20 A/µs

trr Reverse recovery time IF = 1 A to VR ≥ 30 V; - 50 60 ns

dIF/dt = 100 A/µs

Irrm Peak reverse recovery current IF = 10 A to VR ≥ 30 V; - 4.2 5.2 A

dIF/dt = 50 A/µs; Tj = 100˚C

Vfr Forward recovery voltage IF = 10 A; dIF/dt = 10 A/µs - 2.5 - V

Fig.1. Definition of t

, Q

and I

rrm

Fig.2. Definition of V

Fig.3. Maximum forward dissipation P

= f(I

F(AV)

) per

diode; square wave where I

F(AV)

F(RMS)

√

Fig.4. Maximum forward dissipation P

= f(I

F(AV)

) per

diode; sinusoidal current waveform where a = form

factor = I

F(RMS)

/ I

F(AV)

Qs100%

10%

time

Irrm

trr

0 5 10 15 20 25

D = 1.0

0.5

0.2

0.1

BYV44

Rs = 0.0137 Ohms

Vo = 0.8900 V

IF(AV) / A

PF / W

D =

tptp

Tmb(max) / C

150

138

126

114

102

time

Vfr

0 5 10 15

1.9

2.2

2.8

BYV44

IF(AV) / A

PF / W

a = 1.57

Rs = 0.0137

Vo = 0.89

Tmb(max) / C

150

138

126

114

102

October 1998 2 Rev 1.400

NXP Semiconductors Product specification

Dual rectifier diodes BYV44 series

ultrafast

Fig.5. Maximum t

at T

= 25˚C and 100˚C; per diode

Fig.6. Maximum I

rrm

at T

= 25˚C and 100˚C; per

diode

Fig.7. Typical and maximum forward characteristic

= f(V

); parameter T

Fig.8. Maximum Q

at T

= 25˚C; per diode

Fig.9. Transient thermal impedance per diode

th j-mb

= f(t

)

trr / ns

110

100

1000

100

dIF/dt (A/us)

IF=20 A

Tj = 25 C

Tj = 100 C

100

1000 Qs / nC

1.0 10 100

-dIF/dt (A/us)

IF = 20 A

2 A

0.1

0.01

Irrm / A

110 100

-dIF/dt (A/us)

IF=1A

IF= 20 A

Tj = 25 C

Tj = 100 C

1us 10us 100us 1ms 10ms 100ms 1s 10s

0.001

0.01

0.1

BYV42E

pulse width, tp (s)

Transient thermal impedance, Zth j-mb (K/W)

D =

tptp

0 0.5 1 1.5 2

50 BYV74

VF / V

IF / A

Tj = 25 C

Tj = 150 C

max

typ

October 1998 3 Rev 1.400

NXP Semiconductors Product specification

Dual rectifier diodes BYV44 series

ultrafast

MECHANICAL DATA

Dimensions in mm

Net Mass: 2 g

Fig.10. SOT78 (TO220AB); pin 2 connected to mounting base.

Notes

1. Refer to mounting instructions for SOT78 (TO220) envelopes.

2. Epoxy meets UL94 V0 at 1/8".

10,3

max

3,7

2,8

3,0

3,0 max

not tinned

1,3

max

(2x)

123

2,4

0,6

4,5

max

5,9

min

15,8

max

1,3

2,54 2,54

0,9 max (3x)

13,5

min

October 1998 4 Rev 1.400

NXP Semiconductors

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