PD- 93892C IRF7458 SMPS MOSFET HEXFET(R) Power MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power Benefits l l l Ultra-Low Gate Impedance Very Low RDS(on) Fully Characterized Avalanche Voltage and Current VDSS RDS(on) max ID 30V 8.0m 14A A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S SO-8 T o p V ie w Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range Max. Units 30 30 14 11 110 2.5 1.6 0.02 -55 to + 150 V V A W W mW/C C Thermal Resistance Symbol RJL RJA Parameter Junction-to-Drain Lead Junction-to-Ambient Typ. Max. Units --- --- 20 50 C/W Notes through are on page 8 www.irf.com 1 3/25/01 IRF7458 Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 30 --- --- Static Drain-to-Source On-Resistance --- Gate Threshold Voltage 2.0 --- Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- Gate-to-Source Reverse Leakage --- Typ. --- 0.029 6.3 7.0 --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 8.0 VGS = 16V, ID = 14A m 9.0 VGS = 10V, ID = 11A 4.0 V VDS = VGS, ID = 250A 20 VDS = 24V, VGS = 0V A 100 VDS = 24V, VGS = 0V, TJ = 125C 200 VGS = 24V nA -200 VGS = -24V Dynamic @ TJ = 25C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 26 --- --- --- --- --- --- --- --- --- --- --- Typ. --- 39 11 8.7 29 10 4.6 22 5.0 2410 1100 110 Max. Units Conditions --- S VDS = 15V, ID = 11A 59 ID = 11A 17 nC VDS = 15V 13 VGS = 10V 44 VGS = 0V, VDS = 16V --- VDD = 15V --- ID = 11A ns --- RG = 1.8 --- VGS = 10V --- VGS = 0V --- VDS = 15V --- pF = 1.0MHz Avalanche Characteristics Symbol EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current Typ. Max. Units --- --- 280 11 mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Qrr trr Qrr Reverse Reverse Reverse Reverse 2 Recovery Recovery Recovery Recovery Time Charge Time Charge Min. Typ. Max. Units --- --- 2.3 A --- --- 110 --- --- --- --- --- --- 0.82 0.68 51 87 52 93 1.3 --- 77 130 78 140 V ns nC ns nC Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25C, IS = 11A, VGS = 0V TJ = 125C, I S = 11A, VGS = 0V TJ = 25C, IF = 11A, VR= 20V di/dt = 100A/s TJ = 125C, IF = 11A, VR=20V di/dt = 100A/s www.irf.com IRF7458 1000 1000 VGS 16V 12V 10V 8.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 100 4.5V 10 20s PULSE WIDTH TJ = 25 C 1 0.1 1 10 4.5V 10 R DS(on) , Drain-to-Source On Resistance (Normalized) 2.0 100 TJ = 150 C TJ = 25 C V DS = 15V 20s PULSE WIDTH 5.5 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 1000 5.0 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 4.5 20s PULSE WIDTH TJ = 150 C 1 0.1 100 VDS , Drain-to-Source Voltage (V) I D , Drain-to-Source Current (A) VGS 16V 12V 10V 8.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 6.0 ID = 14A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7458 20 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss Coss 1000 Crss 100 16 12 8 4 10 0 1 10 0 100 10 20 30 40 50 60 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) ISD , Reverse Drain Current (A) 100 I D , Drain Current (A) C, Capacitance(pF) 10000 ID = 11A VDS = 24V VDS = 15V VGS , Gate-to-Source Voltage (V) 100000 100 TJ = 150 C 10 TJ = 25 C 100us 10 1ms 1 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 1.8 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 10us 2.2 10ms TA = 25 C TJ = 150 C Single Pulse 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com Fig 6. On-Resistance Vs. Drain Current IRF7458 16 VDS I D , Drain Current (A) VGS 12 RD D.U.T. RG + -VDD 10V 8 Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit 4 VDS 90% 0 25 50 75 100 TC , Case Temperature 125 150 ( C) 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 P DM t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.01 0.00001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 0.020 R DS(on) , Drain-to -Source On Resistance ( ) R DS (on) , Drain-to-Source On Resistance ( ) IRF7458 0.016 VGS = 6.0V 0.012 VGS = 10V 0.008 VGS = 16V 0.004 0 20 40 60 80 100 0.016 0.014 0.012 ID = 14A 0.010 0.008 0.006 120 4 6 8 10 12 14 16 VGS, Gate -to -Source Voltage (V) ID , Drain Current (A) Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage Current Regulator Same Type as D.U.T. QG VGS .2F QGS .3F D.U.T. QGD 800 + V - DS VG EAS , Single Pulse Avalanche Energy (mJ) 50K 12V VGS 3mA Charge IG ID Current Sampling Resistors Fig 13a&b. Basic Gate Charge Test Circuit and Waveform 15 V V (B R )D S S tp L VD S D .U .T RG IA S 20V IAS tp DRIVE R + V - DD 0.01 Fig 14a&b. Unclamped Inductive Test circuit and Waveforms 6 A TOP BOTTOM ID 5.0A 9.0A 11A 600 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( C) Fig 14c. Maximum Avalanche Energy Vs. Drain Current www.irf.com IRF7458 SO-8 Package Details D IM D -B - 5 8 E -A - 1 7 2 5 A 6 3 e 6X 5 H 0 .2 5 (.0 1 0 ) 4 M A M e1 K x 4 5 -C - 0 .1 0 (.0 0 4 ) B 8X 0 .2 5 (.0 1 0 ) A1 L 8X 6 C 8X M C A S B S NOTES: 1 . D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 . 2 . C O N T R O L L IN G D IM E N S IO N : IN C H . 3 . D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 4 . O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S -0 1 2 A A . 5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 (.0 0 6 ). 6 D IM E N S IO N S IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S T R A T E .. M IN M AX .05 32 .06 88 1.3 5 1.75 .00 40 .00 98 0.1 0 0.25 B .01 4 .01 8 0.3 6 0.46 C .00 75 .009 8 0.19 0.25 D .18 9 .196 4.80 4.98 E .15 0 .15 7 3.8 1 3.99 e1 A M ILLIM E T E R S M AX A1 e IN C H E S M IN .05 0 B A S IC 1.27 B A S IC .02 5 B A S IC 0 .635 B A S IC H .22 84 .244 0 K .01 1 .01 9 0.2 8 5.8 0 0.48 6.20 L 0.16 .05 0 0.4 1 1.27 0 8 0 8 R E C O M M E N D E D F O O T P R IN T 0 .7 2 (.0 2 8 ) 8X 6 .4 6 ( .2 5 5 ) 1 .7 8 (.0 7 0 ) 8X 1 .2 7 ( .0 5 0 ) 3X SO-8 Part Marking www.irf.com 7 IRF7458 SO-8 Tape and Reel TER M IN AL N UM B ER 1 1 2.3 ( .484 ) 1 1.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) F EE D D IRE C TIO N N OT E S : 1 . CO NT RO L L ING DIM E NSIO N : M IL L IM E T E R . 2 . AL L DIM E NS ION S ARE SHO W N IN M ILL IM E TER S (INC HE S ). 3 . OU TL IN E CO N FO RM S T O E IA -4 8 1 & E IA -5 4 1 . 33 0.00 (12.992) M AX . 14.4 0 ( .566 ) 12.4 0 ( .488 ) N O T ES : 1 . CO NT RO LL ING D IM EN SIO N : M ILLIME TER . 2 . O U TLIN E C O NF O RM S T O E IA-48 1 & E IA -54 1. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 4.6mH Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board, t<10 sec RG = 25, IAS = 11A. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 3/01 8 www.irf.com