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IRF7458
SMPS MOSFET
HEXFET® Power MOSFET
VDSS RDS(on) max ID
30V 8.0mΩ14A
Symbol Parameter Typ. Max. Units
RθJL Junction-to-Drain Lead –– – 20
RθJA Junction-to-Ambient ––– 50 °C/W
Thermal Resistance
Notes through are on page 8
SO-8
Top View
8
1
2
3
45
6
7
D
D
D
DG
S
A
S
S
A
PD- 93892C
Applications
Benefits
lUltra-Low Gate Impedance
lVery Low RDS(on)
lFully Characterized Avalanche Voltage
and Current
lHigh Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
lHigh Frequency Buck Converters for
Computer Processor Power
Absolute Maximum Ratings
Symbol Parameter Max. Units
VDS Drain-Source Voltage 30 V
VGS Gate-to-Source Voltage ± 30 V
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 14
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 11 A
IDM Pulsed Drain Current110
PD @TA = 25°C Maximum Power Dissipation2.5 W
PD @TA = 70°C Maximum Power Dissipation1.6 W
Linear Derating Factor 0.02 mW/°C
TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C
IRF7458
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Symbol Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) ––– ––– p-n junction diode.
––– 0.82 1.3 V TJ = 25°C, IS = 11A, VGS = 0V
––– 0.68 ––– TJ = 125°C, I S = 11A, VGS = 0V
trr Reverse Recovery Time ––– 51 77 ns TJ = 25°C, IF = 11A, VR= 20V
Qrr Reverse Recovery Charge ––– 87 130 nC di/dt = 100A/µs
trr Reverse Recovery Time ––– 52 78 ns TJ = 125°C, IF = 11A, VR=20V
Qrr Reverse Recovery Charge ––– 93 140 nC di/dt = 100A/µs
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– –– – V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA
––– 6.3 8.0 VGS = 16V, ID = 14A
––– 7.0 9.0 VGS = 10V, ID = 11A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
––– ––– 20 µA VDS = 24V, VGS = 0V
––– ––– 100 VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 24V
Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -24V
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS Drain-to-Source Leakage Current
RDS(on) Static Drain-to-Source On-Resistance mΩ
S
D
G
Diode Characteristics
2.3
110 A
VSD Diode Forward Voltage
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy––– 280 mJ
IAR Avalanche Current––– 11 A
Avalanche Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 26 ––– ––– S VDS = 15V, ID = 11A
QgTotal Gate Charge –– – 39 5 9 ID = 11A
Qgs Gate-to-Source Charge – –– 11 17 nC VDS = 15V
Qgd Gate-to-Drain ("Miller") Charge ––– 8.7 13 VGS = 10V
Qoss Output Gate Charge ––– 29 44 V GS = 0V, VDS = 16V
td(on) Turn-On Delay Time ––– 10 –– – V DD = 15V
trRise Time ––– 4.6 ––– ID = 11A
td(off) Turn-Off Delay Time ––– 22 ––– R G = 1.8Ω
tfFall Time ––– 5.0 ––– VGS = 10V
Ciss Input Capacitance ––– 2410 ––– VGS = 0V
Coss Output Capacitance ––– 1100 ––– VDS = 15V
Crss Reverse Transfer Capacitance ––– 11 0 ––– pF ƒ = 1.0MHz
IRF7458
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Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
1000
0.1 1 10 100
20
µ
s PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
16V
12V
10V
8.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
1000
0.1 1 10 100
20
µ
s PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
16V
12V
10V
8.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Volta
g
e (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
10
100
1000
4.5 5.0 5.5 6.0
V = 15V
20µs PULSE WIDTH
DS
V , Gate-to-Source Volta
g
e (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
Fig 4. Normalized On-Resistance
Vs. Temperature
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
14A
IRF7458
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Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
010 20 30 40 50 60
0
4
8
12
16
20
Q , Total Gate Char
g
e (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D11A
V = 15V
DS
V = 24V
DS
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
1000
0.2 0.6 1.0 1.4 1.8 2.2
V ,Source-to-Drain Volta
g
e (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
1
10
100
1000
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T = 150 C
= 25 C
°°
J
A
V , Drain-to-Source Volta
g
e (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
Fig 8. Maximum Safe Operating Area
110 100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = C
gs + Cgd, C
ds SHORTED
Crss
= C
gd
Coss
= C
ds + Cgd
IRF7458
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Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.01
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 6. On-Resistance Vs. Drain Current
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RGD.U.T.
10V
+
-
VDD
25 50 75 100 125 150
0
4
8
12
16
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
IRF7458
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Fig 13. On-Resistance Vs. Gate Voltage
Fig 12. On-Resistance Vs. Drain Current
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
Fig 14a&b. Unclamped Inductive Test circuit
and Waveforms Fig 14c. Maximum Avalanche Energy
Vs. Drain Current
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
VGS
Q
G
Q
GS
Q
GD
V
G
Charge
tp
V
(
BR
DSS
I
AS
RG
IAS
0.01
Ω
t
p
D.U.T
L
VDS
+
-VDD
DRIVER
A
15V
20V
25 50 75 100 125 150
0
200
400
600
800
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
5.0A
9.0A
11A
0 20406080100120
I
D , Drain Current (A)
0.004
0.008
0.012
0.016
0.020
RDS (on) , Drain-to-Source On Resistance ( Ω)
VGS = 16V
VGS = 6.0V
VGS = 10V
46810 12 14 16
VGS, Gate -to -Source Voltage (V)
0.006
0.008
0.010
0.012
0.014
0.016
RDS(on), Drain-to -Source On Resistance ( Ω)
ID = 14A
IRF7458
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SO-8 Package Details
K x 45°
C
8X
L
8X
θ
H
0.2 5 ( .0 10 ) M A M
A
0.10 (.004)
B 8X
0 .25 (.0 10) M C A S B S
- C -
6X
e
- B -
D
E
- A -
8 7 6 5
1 2 3 4
5
6
5
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
1.78 (.0 70 )
8 X
6.46 ( .2 55 )
1.27 ( .050 )
3X
DIM IN CHE S MIL L IMETERS
MIN MA X MIN MA X
A .0 53 2 .0 68 8 1 .3 5 1 .7 5
A 1 .0 04 0 .0 09 8 0 .1 0 0 .2 5
B .0 14 .0 18 0 .36 0 .4 6
C .0 07 5 .0 0 98 0 .1 9 0 .2 5
D .1 89 .1 9 6 4 .8 0 4 .9 8
E .1 50 .1 57 3 .81 3 .9 9
e .0 5 0 BAS IC 1 .2 7 BAS IC
e 1 .0 2 5 BAS IC 0.6 3 5 B AS IC
H .2 28 4 .2 4 40 5 .80 6 .2 0
K .0 11 .0 19 0 .28 0 .4 8
L 0 .1 6 .0 50 0 .4 1 1 .2 7
θ
0 ° 8 ° 0 ° 8°
NOTES:
1. DIMENSIONING AND TOLE RANCING PER ANSI Y14.5M-1982.
2 . CONTROL LING DIMENSION : INCH.
3. DIMENSIONS ARE SHOW N IN MILLIMETERS (INCHES).
4 . OUT LINE CONFORMS T O J EDE C OUT LINE MS- 0 1 2 AA .
DIM ENSION DOES NOT INCLUDE MOLD PROTRUSIONS
MOL D P ROTR USIONS NOT T O EX CE ED 0 .2 5 (.00 6).
DIMENSIONS IS T HE L E NGTH OF L EA D FOR SOL DERING TO A SU BST RAT E..
5
6
A1
e1
θ
SO-8 Part Marking
IRF7458
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Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Starting TJ = 25°C, L = 4.6mH
RG = 25Ω, IAS = 11A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t<10 sec
33 0.00
(12.992)
MAX.
14.4 0 ( .566 )
12.4 0 ( .488 )
N OT ES :
1. CONTROLLING DIMENSION : MILLIMETER.
2 . OUTLINE CONFORMS TO EIA-48 1 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
1 2.3 ( .484 )
1 1.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROL LING DIMENSION : MILLIM ETER .
2. ALL DIM E NS ION S ARE SHO WN IN M ILLIMETER S
(
INCHES
)
.
3. OU TLIN E CO N FORM S TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 3/01