©2008 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FP7G50US60 Rev. A
FP7G50US60 Transfer Molded Type IGBT Module
tm
July 2008
Power-SPM
TM
FP7G50US60
Transfer Molded Type IGBT Module
General Description
Fairchild’s New IGBT Modules ( Transfer Molded Type ) provide
low conduction and switching losses as well as short circuit
ruggedness. They are designed for applications such as Motor
control, Uninterrupted Power Supplies (UPS) and general
Inverters where short circuit ruggedness is a required feature.
Features
• Short Circuit rated 10us @Tc=100°C, Vge=15V
• High Speed Switching
• Low Saturation Voltage : Vce(sat) =2.2V @Ic=50A
• High Input Impedance
• Fast & Soft Anti-Parallel FWD
Application
•Welders
• AC & DC Motor Controls
• General Purpose Inverters
• Robotics
• Servo Controls
•UPS
Absolute Maximum Ratings
Symbol Description Rating Units
VCES Collector-Emitter Voltage 600 V
VGES Gate-Emitter Voltage ± 20 V
ICCollector Current @ TC = 25°C50 A
ICM (1) Pulsed Collector Current 100 A
IFDiode Continuous Forward Current @ TC = 100°C50 A
IFM Diode Maximum Forward Current 100 A
TSC Short Circuit Withstand Time @ TC = 100°C10 us
PDMaximum Power Dissipation @ TC = 25°C250 W
TJ Operating Junction Temperature -40 to +125 °C
Tstg Storage Temperature Range -40 to +125 °C
Viso Isolation Voltage @ AC 1minute 2500 V
Mounting
Torque Power Terminals Screw : M5 2.0 N.m
Mounting Screw : M5 2.0 N.m
Internal Circuit Diagram
1
2
45 6 7
3
1
2
45 6 7
3
1
2
45 6 7
3
Package Code : EPM7
2www.fairchildsemi.com
FP7G50US60 Rev. A
FP7G50US60 Transfer Molded Type IGBT Module
Pin Configuration and Pin Description
Top View
Internal Circuit Diagram
Pin Description
Pin Number Pin Description
1Emitter of Q1, IGBT,
Collector of Q2, IGBT
2Emitter of Q2, IGBT
3Collector of Q1, IGBT
4Gate of Q1, IGBT
5Emitter of Q1, IGBT
6Gate of Q2, IGBT
7Emitter of Q2, IGBT
1
2
45 6 7
3
1
2
45 6 7
3
1
2
45 6 7
3
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FP7G50US60 Rev. A
FP7G50US60 Transfer Molded Type IGBT Module
Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified)
Symbol Parameter Conditions Min Typ Max Units
Off Characteristic s
BVCES Collector-Emitter Breakdown Voltage VGE= 0V, IC = 250µA 600 - - V
∆BVCES/
∆TJTemperature Coeff. of Breakdown Voltage VGE= 0V, IC = 1mA - 0.6 - V
ICES Collector Cut-off Current VCE= VCES, VGE= 0V - - 250 uA
IGES Gate-Emitter Leakage Current VGE= VGES, VCE= 0V - - ± 100 nA
On Characteristics
VGE(th) G-E Threshold Voltage VGE = 0V, IC=50mA 5.0 6.0 8.5 V
VCE(sat) Collector to Emitter Saturation Voltage IC = 50A, VGE = 15V -2.22.8 V
Dynamic Characteristics
Cies Input Capacitance VCE = 30V, VGE = 0V,
f = 1MHz
2920 pF
Coes Output Capacitance 400 pF
Cres Reverse Capacitance 75 pF
Switching Characteristics
td(on) Turn-On Delay Time
VCC = 300 V, IC = 50A,
RG = 5.9Ω, VGE = 15V
Inductive Load, TC = 25°C
-58- ns
trRise Time -40- ns
td(off) Turn-Off Delay Time - 107 - ns
tfFall Time - 140 - ns
Eon Turn-On Switching Loss - 0.75 - mJ
Eoff Turn-Off Switching Loss - 0.54 - mJ
Ets Total Switching Loss - 1.29 - mJ
td(on) Turn-On Delay Time
VCC = 300 V, IC = 50A,
RG = 5.9Ω, VGE = 15V
Inductive Load, TC = 125°C
-53- ns
trRise Time -40- ns
td(off) Turn-Off Delay Time - 106 - ns
tfFall Time - 274 - ns
Eon Turn-On Switching Loss - 1.09 - mJ
Eoff Turn-Off Switching Loss - 1.68 - mJ
Ets Total Switching Loss - 2.77 - mJ
Tsc Short Circuit Withstand Time VCC = 300 V, VGE = 15V @ TC = 100°C10- - us
QgTotal Gate Charge
VCE = 300 V, IC = 50A, VGE = 15V
- 136 - nC
Qge Gate-Emitter Charge - 26 - nC
Qgc Gate-Collector Charge - 76 - nC
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FP7G50US60 Rev. A
FP7G50US60 Transfer Molded Type IGBT Module
Electrical Characteristics of DIODE (TJ = 25°C, Unless Otherwise Specified)
Thermal Characteristics
Symbol Parameter Conditions Min Typ Max Units
VFM Diode Forward Voltage IF = 50A TC = 25°C-1.9 2.8 V
TC = 100°C-1.8 -
trr Diode Reverse Recovery Time
IF = 50A
di / dt = 100 A/us
TC = 25°C-76 100 ns
TC = 100°C-138
Irr Diode Peak Reverse Recovery Current TC = 25°C- 4 5.2 A
TC = 100°C- 6
Qrr Diode Reverse Recovery Charge TC = 25°C-152 260 nC
TC = 100°C-404
Symbol Parameter Typ. Max. Units
RθJC Junction-to-Case (IGBT Part, per 1/2 Module) -0.4 °C/W
RθJC Junction-to-Case (DIODE Part, per 1/2 Module) -1.0 °C/W
RθCS Case-to-Sink (Conductive grease applied) 0.05 -°C/W
Weight Weight of Module -90 g
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FP7G50US60 Rev. A
FP7G50US60 Transfer Molded Type IGBT Module
Typical Performance Characteristics
02468
0
20
40
60
80
100
120
140
20V
12V
15V
VGE = 10V
Common Emitter
TC = 25o C
IC, Collector Current[A]
VCE, Colle ct o r -E mitter Volt a ge[V] 0.3 1 10 20
0
20
40
60
80
100
120
140 Common Emitter
VGE = 15V
TC = 25o C
TC = 125o C
IC, Collector Current[A ]
VCE, Collector-Emitter Voltage[V]
0 50 100 150
0
1
2
3
4
5
100A
50A
IC = 30A
Comm on Emitter
VGE = 15V
VCE, Co lle c tor-E mitter Voltage [V ]
TC, C ase Tem perature[o C]
0
20
40
60
80
100
120
0.1 1 10 100 1000
Duty cycle : 50%
TC = 100o C
Power D issipation = 130W
VCC = 300V
Load Current : peak of square wave
Frequency [Khz]
Load Current [A ]
048121620
0
4
8
12
16
20 Common Emitter
TC = 25o C
100A
50A
IC = 30A
VCE, Collector-Emitter Voltage[V]
VGE, Gate-Emitter Voltage[V]
0 4 8 121620
0
4
8
12
16
20 Com mon E mitter
TC = 25o C
100A
50A
IC = 30A
VCE, Co llec tor -E mitter Voltage[V]
VGE, Gate-Emitter Voltage[V]
Fig 1. Typical Outp u t Chara ct e ristics
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level Fig 4. Load Current vs. Frequency
Fig 5. Saturation Voltage vs. VGE Fig 6. Saturation Voltage vs. VGE
Fig 2. Typical Saturation Volt age Ch aracteristics
6www.fairchildsemi.com
FP7G50US60 Rev. A
FP7G50US60 Transfer Molded Type IGBT Module
0.5 1 10 30
0
2000
4000
6000
Cres
Coes
Cies
Common Emitter
VGE = 0V, f = 1MHz
TC = 25o C
Capacitance[pF]
VCE, Co llec to r-Emitter Vo lta ge [V ]
110
10
100
1000 Comm o n Emitter
VCC = 3 0 0V, VGE = + /- 1 5V
IC = 50A
TC = 25 oC
TC = 12 5oC Ton
Tr
Switching Time[ns]
RG, Gate Resistance[Ω]
11050
30
100
1000
3000
Tf
Tf
Toff
Commo n Emitter
VCC = 300V, VGE = +/- 15V
IC = 50A
TC = 25oC
TC = 125oC
Switching Time[ns]
RG, Gate Resistance[Ω]
110
0.1
1
10
100 Common Emitter
VCC = 300V, VGE = +/- 15V
IC = 50A
TC = 25oC
TC = 125oC
Eon
Eoff
Switc h in g L o s s[mJ ]
RG, Gate Resistance[Ω]
20 40 60 80 100
10
100
1000
Tr
Ton
Common E mitter
VCC = 300V, VGE = +/- 15V
IC = 50 A
TC = 25oC
TC = 125oC
Switching Time [ns]
IC, Collector Current[A] 20 40 60 80 100
10
100
1000
10000 Commo n Emitte r
VCC = 300V, VGE = +/- 15V
IC = 50A
TC = 2 5oC
TC = 125oC
Toff
Tf
Switc h in g T ime[ns]
IC, Colle c t or C u rrent[A]
Fig 7. Capa citance Characteristics Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 9. Turn-Off Characteristics vs.
Gate Resistance Fig 10. Switching Loss vs. Gate Resistance
Fig 11. Turn-On Characteristics vs.
Collector Current Fig 12. Turn-Off Characteristics vs.
Collector Current
7www.fairchildsemi.com
FP7G50US60 Rev. A
FP7G50US60 Transfer Molded Type IGBT Module
20 40 60 80 100
100
1000
10000
Eoff
Eon
Co mmo n Em itte r
VCC = 300V, VGE = +/- 15V
IC = 50A
TC = 25oC
TC = 125oC
Switching Loss[uJ]
IC, C o lle c to r C urren t[A]
0 100 200
0
3
6
9
12
15
200 V
VCC = 100 V
300 V
Common Emitter
RL = 5.9 Ω
TC = 25oC
VGE, Gate-Emitter Voltage[V]
Qg, Ga te Cha rg e[n C]
1 10 100 1000
1
10
100
Safe Operating Area
VGE = 20V, TC = 100o C
IC, Co ll e c to r C u rr e n t [A]
VCE, Collector-Emitter Voltage[V]
0.3 1 10 100 1000
0.1
1
10
100
300
Single Nonrepetitive
Pulse TC = 25o C
Curves must be derated
linerarly with increase
in temperature
50us
100us
1ms
DC Operation
IC MAX. (Continuous)
IC MAX. (Pulsed)
IC, Co lle c tor Cur re n t [ A]
VCE, Collector-Emitter Voltage[V]
10-5 10-4 10-3 10-2 10-1 100101
1E-3
0.01
0.1
1
TC = 25o C
IGBT :
DIODE :
Thermal Response, Zthjc[o C/W]
Rectangular Pulse Duration[sec]
0 100 200 300 400 500 600 700
0.1
1
10
100
300
Single Nonrepetitive
Pulse TJ = 125
o C
VGE = 15V
RG = 5.9 Ω
IC, Collector Current[A]
VCE, Collector-Emitter Voltage[V]
Fig 14. Gate Charge Characteristics
Fig 13. Switching Loss vs. Collect or
Fig 15. SOA Chara ct eristics Fig 16. Turn-Off SOA Characteristics
Fig 17. RBSOA Cha rac t eris ti cs Fig 18. Transient Thermal Impedance
8www.fairchildsemi.com
FP7G50US60 Rev. A
FP7G50US60 Transfer Molded Type IGBT Module
01234
0
40
80
120
160 Common Cathode
VGE = 0V
TC = 25o C
TC = 125o C
IF, Forward C u rren t[A]
VF, Forward Voltage[V]
0204060
1
10
30
Irr
Trr
Trr
Common Cathode
di/dt = 100A/us
TC = 2 5 o C
TC = 100o C
Irr
Irr, Peak Reverse Recovery Current[A ]
Trr, Reverse Recovery Time [x10ns]
IF, Forward Current[A ]
Fig 20. Reverse Recovery CharacteristicsFig 19. Forward Characteristics
9www.fairchildsemi.com
FP7G50US60 Rev. A
FP7G50US60 Transfer Molded Type IGBT Module
76
54
123
14.50+0.50
-0.80
25.00±0.20
93.00±0.50
23.50±0.50 23.00±0.50 23.00±0.50 16.22±0.50 5.08±0.50
80.00±0.30
35.00±0.50
(14.00) (9.00) (14.00) (9.00) (14.00)(6.50)
(10.00)
(6.50)
(10.00)
10.00±0.10
10.00±0.50
17.50±0.30
12.20±0.30
18.40±0.50
(5°)
(14°)
(14°)0.80
+0.10
-0.05
9.60±0.10
(R2.75)
38.80
±1.00
1.00±0.10
(R1.00)
(90°)
(5°)
(7°)
12.20
±0.30
10.40
±0.30
(R1.65)
Rev. I35
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