s BSZ900N15NS3 G OptiMOSTM3 Power-Transistor Product Summary Package Marking * N-channel, normal level V DS 150 V R DS(on),max 90 m ID 13 A * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) PG-TSDSON-8 * 150 C operating temperature * Pb-free lead plating; RoHS compliant * Qualified according to JEDEC1) for target application * Halogen-free according to IEC61249-2-21 Type Package Marking BSZ900N15NS3 G PG-TSDSON-8 900N15N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 C 13 T C=100 C 8 Unit A Pulsed drain current2) I D,pulse T C=25 C 52 Avalanche energy, single pulse E AS I D=10 A, R GS=25 30 mJ Gate source voltage V GS 20 V Power dissipation P tot 38 W Operating and storage temperature T j, T stg -55 ... 150 C T C=25 C IEC climatic category; DIN IEC 68-1 1) Rev. 2.1 55/150/56 J-STD20 and JESD22 page 1 2011-05-16 BSZ900N15NS3 G Parameter Values Symbol Conditions Unit min. typ. max. - - 3.3 - - 60 150 - - Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction - ambient R thJA 6 cm2 cooling area3) K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=20 A 2 3 4 Zero gate voltage drain current I DSS V DS=120 V, V GS=0 V, T j=25 C - 0.01 1 V DS=120 V, V GS=0 V, T j=125 C - 10 100 V A Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=10 A - 74 90 m V GS=8 V, I D=5 A - 75 91 - 1.7 - 6 12 - S Gate resistance RG Transconductance g fs 3) Rev. 2.1 |V DS|>2|I D|R DS(on)max, I D=10 A see figure 3 page 2 2011-05-16 BSZ900N15NS3 G Parameter Values Symbol Conditions Unit min. typ. max. - 380 510 - 46 61 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 3 - Turn-on delay time t d(on) - 4 - Rise time tr - 4 - Turn-off delay time t d(off) - 8 - Fall time tf - 3 - Gate to source charge Q gs - 1.9 - Gate to drain charge Q gd - 0.9 - - 1.7 - V GS=0 V, V DS=75 V, f =1 MHz V DD=75 V, V GS=10 V, I D=5 A, R G=1.6 pF ns Gate Charge Characteristics 4) V DD=75 V, I D=5 A, V GS=0 to 10 V nC Switching charge Q sw Gate charge total Qg - 5.0 7 Gate plateau voltage V plateau - 5.2 - Output charge Q oss - 12 17 nC - - 13 A - - 52 - 0.9 1.2 - 59 - 123 V DD=75 V, V GS=0 V V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 4) Rev. 2.1 T C=25 C V GS=0 V, I F=13 A, T j=25 C V R=75 V, I F=5 A , di F/dt =100 A/s V ns - nC See figure 16 for gate charge parameter definition page 3 2011-05-16 BSZ900N15NS3 G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS10 V 40 15 35 30 10 I D [A] P tot [W] 25 20 15 5 10 5 0 0 0 40 80 120 160 0 40 80 T C [C] 120 160 T C [C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 102 101 1 s 10 s 101 0.5 Z thJC [K/W] 100 s I D [A] 1 ms 100 0.1 DC 100 0.2 0.05 0.02 0.01 single pulse 10-1 10-1 10-1 100 101 102 103 V DS [V] Rev. 2.1 t p [s] page 4 2011-05-16 BSZ900N15NS3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 C R DS(on)=f(I D); T j=25 C parameter: V GS parameter: V GS 30 150 140 5V 130 25 10 V 5.5 V 120 6V 110 7V 100 90 R DS(on) [m] I D [A] 20 15 6V 8V 80 10 V 70 60 10 50 40 5.5 V 30 5 20 5V 10 4.5 V 0 0 0 1 2 3 0 4 8 V DS [V] 12 16 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 C parameter: T j 28 20 24 15 20 I D [A] g fs [S] 16 12 10 8 5 4 150 C 25 C 0 0 0 2 4 6 8 V GS [V] Rev. 2.1 0 10 20 30 I D [A] page 5 2011-05-16 BSZ900N15NS3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=10 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 200 4 180 3.5 160 200 A 3 20 A 2.5 120 V GS(th) [V] R DS(on) [m] 140 98 % 100 typ 80 2 1.5 60 1 40 0.5 20 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 103 100 Ciss 102 25 C 150 C, 98% I F [A] C [pF] Coss 150 C 10 101 25 C, 98% Crss 100 1 0 20 40 60 80 100 Rev. 2.1 0 0.5 1 1.5 2 V SD [V] V DS [V] page 6 2011-05-16 BSZ900N15NS3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 V GS=f(Q gate); I D=5 A pulsed parameter: T j(start) parameter: V DD 100 10 120 V 8 75 V 30 V V GS [V] I AS [A] 6 10 4 25 C 100 C 2 125 C 1 0 1 10 100 1000 0 2 4 6 Q gate [nC] t AV [s] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 170 V GS Qg 165 V BR(DSS) [V] 160 155 150 V g s(th) 145 Q g(th) 140 Q sw Q gs 135 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [C] Rev. 2.1 page 7 2011-05-16 BSZ900N15NS3 G Package Outline: PG-TSDSON-8 Rev. 2.1 page 8 2011-05-16 BSZ900N15NS3 G Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. 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