HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6227-B
Issued Date : 1993.04.12
Revised Date : 2000. 09.15
Page No. : 1/3
HSMC Product Specifi cation
H2N5088
NPN EPITAXIAL PLANAR TRANSISTOR
Description
This device was designed for low noise, high gain , general purpose
amplifier applications for 1uA to 25mA collector current.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperatur e................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................... 350 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ 35 V
VCEO Collector to Emitter Voltage..................................................................................... 30 V
VEBO Emitter to Base Voltage .......................................................................................... 4.5 V
IC Collector Current......................................................................................................... 50 mA
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 35 - - V IC=100uA, IE=0
BVCEO 30 - - V IC=1mA, IB= 0
BVEBO 4.5 - - V IE=10uA, IC=0
ICBO - - 50 nA VCB=20V, IE=0
IEBO - - 50 nA VEB=3V, IC=0
*VCE(sat) - - 0.5 V IC=10mA, IB=1mA
VBE(on) - - 0.8 V IC=10mA, IB=5V
*hFE1 300 - 900 VCE=5V, IC=0.1mA
*hFE2 350 - - VCE=5V, IC=1mA
*hFE3 300 - - VCE=5V, IC=10mA
fT 50 - - MHz VCE=5V, IC=0.5mA, f=100MHz
Cob - - 4.0 pF VCB=5V, f=1MHz, IE=0
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6227-B
Issued Date : 1993.04.12
Revised Date : 2000. 09.15
Page No. : 2/3
HSMC Product Specifi cation
Characteristics Curve
Current Gain & Collector Current
100
1000
0.1 1 10 100
Collector Curren t (mA)
hFE
hFE @ VCE=5V
Stu r a tion Voltage & Collector Current
0.01
0.10
1.00
0.1 1 10 100
Collector Curren t (mA)
Satu ration Voltage (V)
VCE(sat) @ IC=10IB
VBE(sat) @ IC=10IB
On Voltage & Collector Curr ent
0.1
1.0
0.01 0.1 1 10 100
Collector Curren t (mA)
On Voltage (V)
VBE(on) @ VCE=5V
Capacit ance & Reverse- Biased Voltage
0.1
1
10
0.1 1 10 100
R everse - Biased Vol t a ge (V)
Cap a c ita nce (pF)
Cob
Cutoff Frequency & Collector Current
10
100
1000
1 10 100 1000
Collector Curren t (mA)
Cutoff Frequency (MHz )
VCE=5V
Safe Operating Area
1
10
100
1000
10000
1 10 100
Forward Vol tage-VCE (V)
Collector Curren t-IC (m A)
PT=1ms
PT=100ms
PT=1s
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6227-B
Issued Date : 1993.04.12
Revised Date : 2000. 09.15
Page No. : 3/3
HSMC Product Specifi cation
TO-92 Dimension
*:Typical
Inches Millimeters Inches Millimeters
DIM Min. Max. Min. Max. DIM Min. Max. Min. Max.
A 0.1704 0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704 0.1902 4.33 4.83 H - *0.1000 - *2.54
C 0.5000 - 12.70 - I - *0.0500 - *1.27
D 0.0142 0.0220 0.36 0.56 α1-*5°-*5°
E-
*0.0500 - *1.27 α2-*2°-*2°
F 0.1323 0.1480 3.36 3.76 α3-*2°-*2°
Notes : 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controll i ng dimens ion : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing m ethod, please contact your l ocal HSMC sal es office.
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin famil y, flammability solid burning class:UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its produc ts without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liabilit y for any cons equence of customer product design, infringem ent of patents, or application assistance.
Head Office And Factory :
• Head Office (Hi-Sincerit y Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
• Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax : 886-3-5982931
• Factory 2 : No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5977061 Fax : 886-3-5979220
31
A
D
B
C
Iα1
E
F
α2
α3
G
H
2
Style : Pin 1.Em itter 2.Bas e 3.C ol lec tor
3-Lead TO-92 Plastic Package
HSMC Packa
g
e Code : A
Marking :
HSMC Logo
Part Number
Date Code
Product Series
Rank
Laser Mark
HSMC Logo
Part Number
Product Series
Ink Mark
