STS8550 Semiconductor PNP Silicon Transistor Descriptions * High current application * Radio in class B push-pull operation Feature * Complementary pair with STS8050 Ordering Information Type NO. Marking Package Code STS8550 STS8550 TO-92 Outline Dimensions unit : mm 3.450.1 4.50.1 4.50.1 2.250.1 2.060.1 14.00.40 0.40.02 1.27 Typ. 2.54 Typ. PIN Connections 1. Emitter 2. Base 3. Collector 0.38 1.200.1 1 2 3 KST-9013-000 1 STS8550 (Ta=25C) Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -30 V Collector-Emitter voltage VCEO -25 V Emitter-Base voltage VEBO -6 V Collector current IC -800 mA Emitter current IE 800 mA Collector dissipation PC 625 mW Junction temperature Tj 150 C Storage temperature Tstg -55~150 C (Ta=25C) Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=-500A, IE=0 -30 - - V Collector-Emitter breakdown voltage BVCEO IC=-1mA, IB=0 -25 - - V Collector cut-off current ICBO VCB=-15V, IE=0 - - -50 nA DC current gain h VCE=-1V, IC=-50mA 85 - 300 - IC=-500mA, IB=-50mA - - -0.5 V VCE=-1V, IC=-500mA - - -1.2 V VCE=-5V, IC=-10mA - 120 - MHz VCB=-10V, IE=0, f=1MHz - 19 - pF Collector-Emitter saturation voltage * FE VCE(sat) Base-Emitter voltage VBE Transition frequency fT Collector output capacitance * : hFE Rank Cob / B : 85~160, C : 120~200, D : 160~300 KST-9013-000 2 STS8550 Electrical Characteristic Curves Fig. 1 Pc - Ta Fig. 2 IC - VBE Fig. 3 IC - VCE Fig. 4 VCE(SAT) - IC Fig. 6 hFE - IC Fig. 5 hFE - IC KST-9013-000 3