© by SEMIKRON B 1 – 43
SEMIPACK
®
1
Thyristor/ Diode Modules
SKKT 41 SKKH 41
SKKT 42 SKKH 42
SKKT 42B SKKL 42
2)
SKKT 41 SKKH 41
SKKT 42 SKKH 42
SKKL 42
Features
•Heat transfer through aluminium
oxide ceramic isolated metal
baseplate
•Hard soldered joints for high
reliability
•UL recognized, file no. E 63 532
Typical Applications
•DC motor control (e. g. for
machine tools)
•AC motor soft starte rs
•Temperature control (e. g. fo r
ovens, chemical processes)
•Professional light dimming
(studios, theaters)
1)
Also available in SKKT 42 B
configuration (case A 48).
2)
SKKL 42 available on request
3)
/20 E, /22 E max. 30 mA
4)
See the assembly instructions
V
RSM
V
RRM
(dv/ I
TRMS
(maximum value for continuous operation)
V
DRM
dt)
cr
75 A
I
TAV
(sin. 180; T
case
= 68 °C)
VVV/µs48 A
500 400 500 – – SKKH 41/04 D –
700 600 500 SKKT 41/06 D SKKT 42/06 D SKKH 41/06 D SKKH 42/06 D
900 800 500 SKKT 41/08 D SKKT 42/08 D
1)
SKKH 41/08 D SKKH 42/08 D
1300 1200 500 SKKT 41/12 D – SKKH 41/12 D –
1300 1200 1000 SKKT 41/12 E SKKT 42/12 E
1)
SKKH 41/12 E SKKH 42/12 E
1500 1400 1000 SKKT 41/14 E SKKT 42/14 E
1)
SKKH 41/14 E SKKH 42/14 E
1700 1600 1000 SKKT 41/16 E SKKT 42/16 E
1)
SKKH 41/16 E SKKH 42/16 E
1900 1800 1000 SKKT 41/18 E SKKT 42/18 E
1)
SKKH 41/18 E SKKH 42/18 E
2100 2000 1000 SKKT 41/20 E SKKT 42/20 E
1)
––
2300 2200 1000 SKKT 41/22 E SKKT 42/22 E
1)
––
Symbol Conditions SKKT 41 SKKT 42
SKKH 41 SKKT 42B
SKKH 42
I
TAV
sin. 180; T
case
= 74 °C48 A
T
case
= 85 °C40 A
I
D
B2/B6 T
amb
= 45 °C; P 3/180 50 A/60 A
T
amb
= 35 °C; P 3/180 F 85 A/110 A
I
RMS
W1/W3 T
amb
= 35 °C; P 3/180 F 110 A/3 x 85 A
I
TSM
T
vj
= 25 °C; 10 ms 1 000 A
T
vj
= 125 °C; 10 ms 850 A
i
2
tT
vj
= 25 °C; 8,3 ... 10 ms 5 000 A
2
s
T
vj
= 125 °C; 8,3 ... 10 ms 3 600 A
2
s
t
gd
T
vj
= 25 °C; I
G
= 1 A; di
G
/dt = 1 A/µs1 µs
t
gr
V
D
= 0,67 . V
DRM
2 µs
(di/dt)
cr
T
vj
= 125 °C 150 A/µs
t
q
T
vj
= 125 °C typ. 80 µs
I
H
T
vj
= 25 °C; typ. 150 mA; max. 250 mA
I
L
T
vj
= 25 °C; R
G
= 33 Ωtyp. 300 mA; max. 600 mA
V
T
T
vj
= 25 °C; I
T
= 200 A max. 1,95 V
V
T(TO)
T
vj
= 125 °C1 V
r
T
T
vj
= 125 °C 4,5 mΩ
I
DD
; I
RD
T
vj
= 125 °C; V
DD
= V
DRM
; V
RD
= V
RRM
max. 15 mA
3)
V
GT
T
vj
= 25 °C; d. c. 3 V
I
GT
T
vj
= 25 °C; d. c. 150 mA
V
GD
T
vj
= 125 °C; d. c. 0,25 V
I
GD
T
vj
= 125 °C; d. c. 6 mA
R
thjc
cont. 0,65 °C/W / 0,33 °C/W
sin. 180 per thyristor/per module 0,69 °C/W / 0,35 °C/W
rec.120 0,73 °C/W / 0,37 °C/W
R
thch
0,2 °C/W / 0,1 °C/W
T
vj
, T
stg
– 40 ... +125 °C
V
isol
a. c. 50 Hz; r.m.s.; 1 s/1 min 3600 V∼ / 3000 V ∼
M
1
to heatsink SI units / US units 5 Nm/44 lb. in. ± 15 %
4)
M
2
to terminals 3 Nm/26 lb. in. ± 15 %
a5
.
9,81 m/s
2
w approx. 120 g
Case → page B 1 – 93 SKKT 41: A 5 SKKL 42: A 59
SKKH 41: A 6 SKKT 42: A 46
SKKH 42: A 47 SKKT 42B: A 48
0896
© by SEMIKRONB 1 – 44
© by SEMIKRON B 1 – 45
© by SEMIKRONB 1 – 46
