4 FR151G-T - FR157G-T
Taiwan Semiconductor
1 Version:A1703
1.5A, 50V - 1000V Glass Passivated Fast Recovery Rectifier
FEATURES
● Glass passivated chip junction
● High current capability, Low VF
● High reliability
● High surge current capability
● Low power loss, high efficiency
● Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Switching mode power supply (SMPS)
● Adapters
● TV
● Monitor
MECHANICAL DATA
● Case: DO-204AC (DO-15)
● Molding compound meets UL 94V-0 flammability rating
● Packing code with suffix "G" means green compound
(halogen-free)
● Terminal: Pure tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 1A whisker test
● Polarity: As marked
● Weight: 0.4 g (approximately)
KEY PARAMETERS
PARAMETER
VALUE
UNIT
IF(AV)
1.5
A
VRRM
50 - 1000
V
IFSM
50
A
TJ MAX
150
°C
Package
DO-204AC (DO-15)
Configuration
Single die
DO-204AC (DO-15)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
SYMBOL
FR151
G-T
FR152
G-T
FR153
G-T
FR154
G-T
FR155
G-T
FR156
G-T
FR157
G-T
UNIT
FR151G
FR152G
FR153G
FR154G
FR155G
FR156G
FR157G
VRRM
50
100
200
400
600
800
1000
V
VR(RMS)
35
70
140
280
420
560
700
V
IF(AV)
1.5
A
IFSM
50
A
TJ
- 55 to +150
°C
TSTG
- 55 to +150
°C
4 FR151G-T - FR157G-T
Taiwan Semiconductor
2 Version:A1703
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to- ambient thermal resistance
RӨJA
60
°C/W
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
TYP
MAX
UNIT
Forward voltage per diode (1)
IF = 1.5A,TJ = 25°C
VF
-
1.3
V
Reverse current @ rated VR per diode (2)
TJ = 25°C
IR
-
5
µA
TJ = 125°C
-
100
µA
Junction capacitance
1 MHz, VR=4.0V
CJ
20
-
pF
Reverse recovery time
FR151G-T
IF=0.5A , IR=1.0A
IRR=0.25A
trr
-
150
ns
FR152G-T
FR153G-T
FR154G-T
FR155G-T
-
250
ns
FR156G-T
-
500
ns
FR157G-T
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
ORDERING INFORMATION
PART NO.
PACKING
CODE
PACKING CODE
SUFFIX
PACKAGE
PACKING
FR15xG-T
(Note 1, 2)
A0
G
DO-15
1,500 / Ammo box
R0
DO-15
3,500 / 13" Paper reel
B0
DO-15
1,000 / Bulk packing
Notes:
1. "x" defines voltage from 50V (FR151G-T) to 1000V (FR157G-T)
2. Whole series with green compound (halogen-free)
EXAMPLE P/N
EXAMPLE P/N
PART NO.
PACKING CODE
PACKING CODE
SUFFIX
DESCRIPTION
FR151G-T A0G
FR151G-T
A0
G
Green compound
4 FR151G-T - FR157G-T
Taiwan Semiconductor
3 Version:A1703
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
Fig.2 Typical Junction Capacitance
Fig.3 Typical Reverse Characteristics
Fig.4 Typical Forward Characteristics
0
0.5
1
1.5
2
25 50 75 100 125 150
AMBIENT TEMPERATURE (°C)
RESISTIVE OR
INDUCTIVE LOAD
1
10
100
110 100
REVERSE VOLTAGE (V)
f=1.0MHz
Vsig=50mVp-p
0.1
1
10
100
1000
020 40 60 80 100 120 140
TJ=25°C
TJ=75°C
TJ=125°C
0.1
1
10
0.4 0.6 0.8 1 1.2 1.4 1.6
Pulse Width=300us
1% Duty Cycle
CAPACITANCE (pF)
INSTANTANEOUS REVERSE CURRENT (μA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
INSTANTANEOUS FORWARD CURRENT (A)
(A)
0.001
0.01
0.1
1
10
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
Pulse width
TJ=25°C
TJ=125°C
UF1DLW
FORWARD VOLTAGE (V)
AVERAGE FORWARD CURRENT (A)
4 FR151G-T - FR157G-T
Taiwan Semiconductor
4 Version:A1703
0
10
20
30
40
50
60
110 100
NUMBER OF CYCLES AT 60 Hz
8.3ms Single Half Sine Wave
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.5 Maximum Non-repetitive Forward Surge Current
Fig.6 Reverse Recovery Time Characteristic And Test Circuit Diagram
PEAK FORWARD SURGE CURRENT (A)
4 FR151G-T - FR157G-T
Taiwan Semiconductor
5 Version:A1703
PACKAGE OUTLINE DIMENSIONS
DO-204AC (DO-15)
MARKING DIAGRAM
P/N = Marking Code
G = Green Compound
YWW = Date Code
F = Factory Code
DIM.
Unit (mm)
Unit (inch)
Min
Max
Min
Max
A
2.60
3.60
0.102
0.142
B
0.70
0.90
0.028
0.035
C
25.40
-
1.000
-
D
5.80
7.60
0.228
0.299
E
25.40
-
1.000
-
4 FR151G-T - FR157G-T
Taiwan Semiconductor
6 Version:A1703
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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