MBR1070CT thru MBR10100CT Wide Temperature Range and High Tjm Schottky Barrier Rectifiers A C A Dimensions TO-220AB A C A C(TAB) A B C D E F G H J K M N Q R A=Anode, C=Cathode, TAB=Cathode MBR1070CT MBR1080CT MBR1090CT MBR10100CT VRRM V 70 80 90 100 VRMS V 49 56 63 70 Symbol VDC V 70 80 90 100 Characteristics 10 A 120 A 10000 V/us @TJ=25oC @TJ=125oC @TJ=25oC @TJ=125oC 0.85 0.75 0.95 0.85 V @TJ=25oC @TJ=125oC 0.1 15 mA @TC=100oC IFSM Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Voltage Rate Of Change (Rated VR) VF Maximum Forward Voltage (Note 1) IR Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Thermal Resistance (Note 2) 3.0 CJ Typical Junction Capacitance Per Element (Note 3) 300 TJ Operating Temperature Range ROJC TSTG Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Unit Maximum Average Forward Rectified Current IF=5A IF=5A IF=10A IF=10A Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Maximum Ratings I(AV) dv/dt Dim. Storage Temperature Range o C/W pF -55 to +150 o -55 to +175 o NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. FEATURES MECHANICAL DATA * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applications * Case: TO-220AB molded plastic * Polarity: As marked on the body * Weight: 0.08 ounces, 2.24 grams * Mounting position: Any C C MBR1070CT thru MBR10100CT AVERAGE FORWARD CURRENT AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 10 8 6 4 2 RESISTIVE OR INDUCTIVE LOAD 0 50 25 75 100 125 150 PEAK FORWARD SURGE CURRENT, AMPERES Wide Temperature Range and High Tjm Schottky Barrier Rectifiers FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT 120 100 80 60 40 20 8.3ms Single Half-Sine-Wave (JEDEC METHOD) 0 175 1 2 CASE TEMPERATURE , C FIG.3 - TYPICAL REVERSE CHARACTERISTICS 20 10 50 100 FIG.4 - TYPICAL FORWARD CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT ,(A) 100 TJ = 100 C 10 TJ = 75 C 1.0 0.1 0.01 TJ = 25 C 0.001 10 1.0 TJ = 25 C PULSE WIDTH 300us 2% Duty cycle 0.1 0 20 40 60 80 100 140 120 0.1 0.2 0.3 0.4 FIG.5 - TYPICAL JUNCTION CAPACITANCE 1000 100 TJ = 25 C, f= 1MHz 10 0.1 1 0.5 0.6 0.7 0.8 0.9 INSTANTANEOUS FORWARD VOLTAGE , VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%) CAPACITANCE , (pF) INSTANTANEOUS REVERSE CURRENT ,(mA) 5 NUMBER OF CYCLES AT 60Hz 4 10 REVERSE VOLTAGE , VOLTS 100 1.0