D W DAWIN Electronics TM DM2G150SH6NE Nov. 2010 High Power Rugged Type IGBT Module Equivalent Circuit and Package Description DAWIN'S IGBT module devices are optim ized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and other applications where switching losses are significant portion of the total losses. Equivalent Circuit 6 7 Features 5 4 High Speed Switching BVCES = 600V Low Conduction Loss : VCE(sat) = 2.1 V (typ.) Fast & Soft Anti-Parallel FWD Short circuit rated : Min.10uS at TC=100 Reduced EMI and RFI Isolation Type Package Package : 7DM-1 Series Applications Motor Drives, High Power Inverters, Welding Machine, Induction Heating, UPS , CVCF, Robotics , Servo Controls, High Speed SMPS Please see the package out line information Absolute Maximum Ratings @ Tj=25(Per Leg) Symbol Parameter Conditions Ratings Unit VCES Collector-Emitter Voltage - 600 V VGES Gate-Emitter Voltage - 20 V IC Collector Current TC = 25 175 A TC = 75 150 A - 300 A ICM (1) Pulsed Collector Current IF Diode Continuous Forward Current TC = 100 150 A IFM Diode Maximum Forward Current - 300 A TSC Short Circuit Withstand Time TC = 100 10 uS PD Maximum Power Dissipation TC = 25 568 W Tj Operating Junction Temperature - -40 ~ 150 Tstg Storage Temperature Range - -40 ~ 125 Viso Isolation Voltage AC 1 minute 2500 V Mounting screw Torque :M6 - 4.0 N.m Power terminals screw Torque :M5 - 2.0 N.m Note : (1) Repetitive rating : Pulse width limited by max. junction temperature Copyright@Dawin Electronics Corp. All right reserved 1/7 D W DAWIN Electronics TM DM2G150SH6NE Nov. 2010 Electrical Characteristics of IGBT @ TC=25 (unless otherwise specified) Values Symbol Parameter Conditions BVCES C - E Breakdown Voltage VGE = 0V , IC = 250uA BVCES/ Temperature Coeff. of TJ Breakdown Voltage VGE(th) Unit Typ. Max. 600 - - V VGE = 0V , IC = 1.0mA - 0.6 - V/ G - E threshold voltage IC =150mA , VCE = VGE 5.0 6.5 8.5 V ICES Collector cutoff Current VCE = 600V , VGE = 0V - - 250 uA IGES G - E leakage Current VGE =20V - - 150 nA VCE(sat) Collector to Emitter IC=150A, VGE=15V @TC= 25 - 2.1 2.9 V saturation voltage IC=150A, VGE=15V @TC=100 - 2.4 - V Cies Input Capacitance VCE = 30V , f = 1MHz - 12.840 - nF Coes Output Capacitance VGE =0V - 14.00 - nF Cres Reverse Transfer Capacitance - 3.54 - nF td(on) Turn on delay tim e VCC = 300V , IC =150A - 70 - nS Turn on rise time VGE = 15V - 80 - nS Turn off delay tim e RG = 5.1 - 115 - nS Turn off fall time Inductive Load, @TC = 25 - 120 220 nS tr td(off) tf Min. Eon Turn on Switching Loss - 5.4 - mJ Eoff Turn off Switching Loss - 11 - mJ Ets Total Switching Loss - 16.4 - mJ Tsc Short Circuit Withstand Time 10 - - uS VCC = 300V, VGE = 15V @TC = 100 Qg Total Gate Charge VCC = 300V - 460 - nC Qge Gate-Emitter Charge VGE = 15V - 130 - nC Qgc Gate-Collector Charge IC = 150A - 190 - nC Copyright@Dawin Electronics Corp. All right reserved 2/7 D W DAWIN Electronics TM DM2G150SH6NE Nov. 2010 Electrical Characteristics of FRD @ TC=25 (unless otherwise specified) Symbol VFM trr Irr Qrr Parameter Values Conditions Diode Forward Voltage IF=150A Min. Typ. Max. Tc =25 - 1.6 2.1 Tc =100 - 1.7 - Diode Reverse IF=150A, VR=300V Tc =25 - 120 140 Recovery Tim e di/dt= -300A/uS Tc =100 - 140 - Diode Peak Reverse Tc =25 - 30 45 Recovery Current Tc =100 - 47 - Diode Reverse Tc =25 - 2400 3150 Recovery Charge Tc =100 - 3290 - Unit V nS A nC Thermal Characteristics and Weight Symbol Parameter Conditions Values Min. Typ. Max. Unit RJC Junction-to-Case(IGBT Part, Per 1/2 Module) - - 0.22 /W RJC Junction-to-Case(DIODE Part, Per 1/2 Module) - - 0.49 /W RCS Case-to-Sink ( Conductive grease applied) 0.05 - - /W Weight Weight of Module - - 200 g Copyright@Dawin Electronics Corp. All right reserved 3/7 D W DAWIN Electronics TM DM2G150SH6NE Nov. 2010 Performance Curves 300 Common Emitter Tc= 25 300 15V Collector Current, IC [A] Collector Current, IC [A] Common Emitter Tc= 125 12V 250 20V 200 150 V GE= 10V 100 15V 250 20V 12V 200 150 V GE= 10V 100 50 50 0 0 0 1 2 3 4 5 6 7 0 8 1 Collector - Emitter Voltage, VCE(sat) [V] 2 3 4 5 6 7 8 Collector - Emitter Voltage, VCE(sat) [V] Fig 1. Typical Output characteristics Fig 2. Typical Output characteristics 200 300 180 160 T C=25 Load Current [A] Collector Current, IC [A] 250 200 T C=125 150 100 140 120 100 80 60 40 50 Duty cycle = 50% TC=125 Power Dissipation = 160W 20 0 0 0 1 2 3 4 5 6 7 8 0.1 1 10 Collector - Emitter Voltage, VCE(sat) [V] Fig 3. Typical Saturation Voltage characteristics 20 Collector - Emitter Voltage, VCE(sat) [V] Collector - Emitter Voltage, VCE(sat) [V] Common Emitter TC=25 16 14 12 10 8 6 150A 200A 4 IC=100A 2 0 0 4 8 12 16 1000 Fig 4. Load Current vs. Frequency 20 18 100 Frequency [KHz] 20 Gate - Emitter Voltage, VGE [V] Common Emitter TC=125 18 16 14 12 10 8 6 150A 4 200A IC=100A 2 0 0 4 8 12 16 20 Gate - Emitter Voltage, VGE [V] Fig 5. Typical Saturation Voltage vs. V GE Fig 6. Typical Saturation Voltage vs. V GE Copyright@Dawin Electronics Corp. All right reserved 4/7 W DAWIN Electronics DM2G150SH6NE Nov. 2010 1 15 Gate-Emitter Voltage ,VGE [V] TM Common Emitter RL = 5.1 TC = 25 12 Thermal Response Zthjc [/W] D Vcc=300V 9 6 3 0 0 100 200 300 400 0.1 0.01 IGBT : DIODE : TC=25 0.001 1.E-05 500 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 Rectangular Pulse Duration [sec] Gate Charge, Qg [nc] Fig 7. Gate Charge Characteristics Fig 8. Transient Thermal Impedance 1000 2000 1600 Collector Current, IC [A] Collector Current, IC [A] 1800 100 10 Single Non-repetitive Pulse T j125 VGE = 15V RG = 5.1 1 0 100 200 1400 1200 1000 800 600 400 200 0 300 400 500 600 0 700 100 Collector-Emitter Voltage, VCE [V] 100us Collector Current ,Ic [ A ] Collector Current, IC [A] 600 700 TJ 150 VGE 15V 180 100 1ms DC Operation 0.1 0.1 500 210 50us Ic MAX. (Continuous) 1 400 Fig 10. SCSOA Characteristic Ic MAX. (Pulsed) 10 300 Collector-Emitter Voltage, VCE [V] Fig 9. RBSOA Characteristic 1000 200 Single Non-repetitive Pulse Tc = 25 Curves must be derated linerarly with increase In temperature 150 120 90 60 30 0 1 10 100 1000 0 20 40 60 80 100 120 140 160 Case Temperature, Tc [ ] Collector-Emitter Voltage, VCE [V] Fig11. SOA characteristics Fig 12. rated Current vs. Case Temperature Copyright@Dawin Electronics Corp. All right reserved 5/7 D W DAWIN Electronics TM 300 TJ 150 VGE 15V Forward Current, IF [A] 600 Power Dissipation ,PD [ W ] DM2G150SH6NE Nov. 2010 500 400 300 200 250 T C=25 200 T C=125 150 100 50 100 0 0 0 20 40 60 80 100 120 140 0 160 Case Temperature, Tc [ ] Capacitance [pF ] 15000 10000 5000 0 1 10 3 Fig 14. Forward characteristics Common Emitter VGE=0V, f=1MHz TC=25 20000 2 Forward Drop Voltage, VF [V] Fig 13. Power Dissipation vs. Case Temperature 25000 1 100 Collector - Emitter Voltage, VCE [V] Fig 15. Capacitance characteristic Copyright@Dawin Electronics Corp. All right reserved 6/7 4 D W DAWIN Electronics TM Nov. 2010 Package Out Line Information 7DM-1 Copyright@Dawin Electronics Corp. All right reserved 7/7 DM2G150SH6NE