SOT89 NPN SILICON P LANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 – FEBRUARY 1996 ✪
COMPLEMENTA RY TYPES – BSR43 - BSR33
BSR41 - BSR31
PARTMARKIN G DETAIL – BSR43 - AR4
BSR41 - AR2
ABSOLUTE MAXI MUM RATI NGS.
PARAMETER SYMBOL BSR41 BSR43 UNIT
Collector-Base Voltage VCBO 70 90 V
Collector-Emitter Voltage VCEO 60 80 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 2A
Continuous Collector Current IC1A
Base Current IB100 mA
Power Dissipation at Tamb
=25°C PTOT 1W
Operating and Storage Temperature Range Tj:Tstg -65 to +150 °C
ELECTRIC AL CH ARACTERISTI CS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base BSR43
Breakdown Voltage BSR41 V(BR)CBO 90
70 VIC=100µA
Collector-Emitter BSR43
Breakdown Voltage BSR41 V(BR)CEO 80
60 VI
C=10mA *
Emitter-Base Breakdown Voltage V(BR)EBO 5V
IE=10µA
Collector Cut-Off Current ICBO 100
50 nA
µAVCB=60V
VCB=60V, Tamb =125°C
Collector-Emitter
Saturation Voltage VCE(sat) 0.25
0.5 V
VIC =150mA, IB =15mA
IC =500mA, IB =50mA
Base-Emitter
Saturation Voltage VBE(sat) 1.0
1.2 V
VIC =150mA, IB =15mA
IC =500mA, IB =50mA
Static Forward
Current Transfer Ratio hFE 30
100
50 300 IC =100µA, VCE =5V
IC =100mA, VCE =5V
IC =500mA, VCE =5V
Collector Capacitance Cc12 pF VCB =10V, f=1MHz
Emitter Capacitance Ce90 pF VEB =0.5V, f=1MHz
Transition Frequency fT100 MHz IC=50mA , VCE=10V
f =35MHz
Turn-On Time Ton 250 ns VCC =20V, IC =100mA
IB1 =IB2 =5mA
Turn-Off Time Toff 1000 ns
*Measure d under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
For typical characteristics graphs see FMMT493 datasheet.
BSR41
BSR43
C
C
B
E
SOT89
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