MICROPAC INDUSTRIES, INC.
OPTOELECTRONIC PRODUCTS DIVISION
•
••
•
725 E.Walnut St., Garland, TX 75040
•
••
•
(972)272-3571
•
••
•
Fax (972)487-6918
www.micropac.com
E-MAIL: OPTOSALES @ MICROPAC.COM
66260
6 PIN GULL WING
PROTON RADIATION TOLERANT OPTOCOUPLER
OPTOELECTRONIC PRODUCTS
DIVISION
12/23/2009
Features:
• High Reliability
• Base lead provided for conventional transistor
biasing
• Rugged package
• Stability over wide temperature
• +1000V electrical isolation
Applications:
• Eliminate ground loops
• Level shifting
• Line receiver
• Switching power supplies
• Motor control
DESCRIPTION
The 66260 is a single channel device electrically similar to the 4N48. This product has been designed to be more tolerant to
proton radiation. The 66260 optocoupler is packaged in a hermetically sealed 6 pin gull wing package. This device can be
supplied to customer specifications as well as tested and screened to the requirements of MIL-PRF-19500 up to space
(JANS) level.
ABS OLUTE MAX IMUM R AT I NGS
Input to Output Voltage .......................................................................................................................................................... 1 kV
Emitter-Base Voltage ............................................................................................................................................................... 7 V
Collector-Emitter Voltage (Value applies to emitter-base open-circuited & the input-diode equal to zero) ........................ 60 V
Collector-Base Voltage .......................................................................................................................................................... 60 V
Reverse Input Voltage ........................................................................................................ .................................................... 7 V
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1) .................................. 50 mA
Peak Forward Input Current (Value applies for tw
≤
1
µ
s, PRR
<
300 pps) ............................................................................ 1 A
Continuous Collector Current ............................................................................................................................................. 50 mA
Continuous Transistor Power Dissipation at (or below) 25
°
C Free-Air Temperature (see Note 2) ............................... 300 mW
Storage Temperature ......................................................................................................................................... -55°C to +150°C
Operating Free-Air Temperature Range ............................................................................................................ -55°C to +100°C
Lead Solder Temperature ( 10 seconds max.) ................................................................................................................... 240°C
Notes:
1. Derate linearly to 100°C free-air tem per ature at the rate of 0.80 mA/°C abov e 25°C.
2. Derate linearly to 100°C free-air tem per ature at the rate of 3 mW/°C above 25°C.
Package Dimensions Schematic Diagram
6X 0.015
0.125
4X 0.050 0.008 MAX.
0.130
0.1930.350±0.010
∆
A 1
K 3
4 C
5 B
6 E
1
A2
NC 3
K
E
6B
5C
4
A - ANODE OF DIODE
B - BASE OF TRANSISTOR
C - COLLECTOR OF TRANSISTOR
E - EMITTER OF TRANSISTOR
K - CATHODE OF DIODE
0.010
ALL TOLERANCES ARE ±0.005 UNLESS OTHERWISE NOTED.
79° MIN.
MICROPAC INDUSTRIES, INC.
OPTOELECTRONIC PRODUCTS DIVISION
•
••
•
725 E.Walnut St., Garland, TX 75040
•
••
•
(972)272-3571
•
••
•
Fax (972)487-6918
www.micropac.com
E-MAIL: OPTOSALES @ MICROPAC.COM
66260
6 PIN GULL WING
PROTON RADIATION TOLERANT OPTOCOUPLER
12/23/2009
ELECTRICAL CHARA CTERISTICS
T
A
= 25
°
C unless otherwise specified.
PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS NOTE
Input Diode Static Reverse Current I
R
100 µA V
R
= 3 V
Input Diode Static Forward Voltage -55
°
C V
F
1.0 2.2 V I
F
= 10 mA
Input Diode Static Forward Voltage +25
°
C V
F
0.8 1.8 2.0 V I
F
= 10 mA
Input Diode Static Forward Voltage +100
°
C V
F
0.8 2.2 V I
F
= 10 mA
OUTP U T TR ANSISTOR
T
A
= 25
°
C unless otherwise specified.
PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS NOTE
Collector-Base Breakdown Voltage V
(
BR
)
CBO
45 V I
C
= 100
µ
A, I
B
= 0, I
F
= 0
Collector-Emitt er Breakdown Voltage V
(
BR
)
CEO
40 V I
C
= 1mA, I
B
= 0, I
F
= 0
Emitter-Base Break down Voltage V
(
BR
)
EBO
7
V I
C
= 0 mA, I
E
= 100
µ
A, I
F
= 0
Off-State Collect or Current
+100
°
C I
CEO
I
CEO
100
100 nA
µ
A V
CE
= 20 V, I
F
= 0 mA, I
B
= 0
V
CE
= 20 V, I
F
= 0 mA, I
B
= 0
COUPLED CHARACTERISTICS
T
A
= 25
°
C unless otherwise specified.
PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS NOTE
On State Collector Current I
C(ON)
1.0 mA V
CE
= 5 V, I
F
= 1mA, I
B
= 0
On State Collector Current +100
°
C I
C(ON)
1.0 mA V
CE
= 5.0 V, I
F
= 2 mA, I
B
= 0
On State Collector Current -55
°
C I
C
(
ON
)
1.0 mA V
CE
= 5 V, I
F
= 2 mA, I
B
= 0
Collector-Emitter Saturation Voltage V
CE
(
SAT
)
0.3 V I
F
= 2 mA, I
C
= 1 mA
Input to Output Internal Resistance R
IO
10
11
Ω
V
IN-OUT
= 1000 V 1
Input to Output Capacit anc e C
IO
2.5 5 pF f = 1MHz, V
IN-OUT
= 1000 V 1
Rise Time-Phototransis t or Operation
t
r
5 10
µ
s V
CC
= 10 V, I
F
= 10 mA,
R
L
= 100
Ω
, I
B
= 0
Fall Time-Phototransist or Operat ion t
f
5 10
µ
s V
CC
= 10 V, I
F
= 10 mA,
R
L
= 100
Ω
, I
B
= 0
NOTES:
1. These parameters are measured betw een all phototransistor leads shorted together and with both input diode leads shorted together.
2. This parameter must be measured using pulse techniques (t
W
= 100
µ
s duty cycle
<
1%).
RECOMMENDED OPERATING CONDITIONS:
PARAMETER SYMBOL MIN MAX UNITS
Input Current, Low Level I
FL
0 90
µ
A
Input Current, High Level I
FH
1 10 mA
Supply Voltage V
CE
5 10 V
Operating Temperature T
A
-55 100
°
C
SELECTION GUIDE
PART NUMBER PART DESCRIPTION
66260-001 Commercial
66260-101 Screened to JAN Level
66260-103 Screened to JANTX Level
66260-105 Screened to JANTXV Level
66260-300 Screened to JANS Level
