©2003 Fairchild Semiconductor Corporation Rev. B, May 2003
KSB1151
PNP Epitaxial Silicon Transistor
Absolute Maximu m Rating s TC=25°C unless otherwise noted
* PW≤10ms, Duty Cycle≤50%
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse test: PW≤350µs, Duty Cycle≤2% Pulsed
hFE Classifi cation
Symbol Parameter Value Units
VCBO Collector-Base Voltage - 60 V
VCEO Collector-Emitter Voltage - 60 V
VEBO Emitter-Base Voltage - 7 V
IC Collector Current (DC) - 5 A
ICP *Collector Current (Pulse) - 8 A
IB Base Current - 1 A
PC Collector Dissipation (Ta=25°C) 1.3 W
Collector Dissipation (TC=25°C) 20 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
ICBO Collector Cut-off Current VCB = - 50V, IE = 0 - 10 µA
IEBO Em itter Cut-off Current VEB = - 7V, IC = 0 - 10 µA
hFE1
hFE2
hFE3
* DC Current Gain VCE = - 1V, IC = - 0.1A
VCE = - 1V, IC = - 2A
VCE = - 2V, IC = - 5A
60
100
50 200 400
VCE(sat) * Collector-Emitter Sat uration Voltage IC = - 2A, IB = - 0.2A - 0.14 - 0.3 V
VBE(sat) * Base-Emi tter Saturation Voltage IC = - 2A, IB = - 0.2A - 0.9 - 1.2 V
tON Turn On Time VCC = - 10V, IC = - 2A
IB1 = - IB2 =0.2A
RL = 5Ω
0.15 1 µs
tSTG St orage Time 0.78 2.5 µs
tF Fall Time 0.18 1 µs
Classification O Y G
hFE2 100 ~ 200 160 ~ 320 200 ~ 400
KSB1151
Feature
• Low Collector-Emitter Saturation Voltage
• Large Collector Current
• High Power Dissipation : PC=1.3W (Ta=25°C)
• Complement to KSD 1691
1TO-126
1. Emitter 2.Collector 3.Base
©2003 Fairchild Semiconductor Corporation
KSB1151
Rev. B, May 2003
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage Figure 4. Forward Bias Operating Area
Figure 5. Reverse Bias Safe Operating Area Figure 6. Derating Curve of Safe Operating Areas
-0.4 -0.8 -1.2 -1.6 -2.0
-0
-2
-4
-6
-8
-10
IB = -200mA
IB = -80mA
IB = -40mA
IB = -20mA
IB = -100mA
IB = -60mA
I
B
= -150mA
I
B
= -30mA
IB = -10mA
IB = 0
IC[A], COLLECTOR CUR RENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-0.01 -0.1 -1 -10
-1
-10
-100
-1000
VCE = -1V
VCE = -2V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
-0.1 -1 -10
-0.01
-0.1
-1
-10 IC = 10 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
-1 -10 -100
-0.1
-1
-10
VCEO(MAX)
IC(Pulse)MAX
2mS
s/b Limited
IC(DC)MAX
200mS
10mS
Dissipation Limited
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-20 -40 -60 -80 -100
-0
-2
-4
-6
-8
-10
VCEO(SUS)
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
025 50 75 100 125 150 175 200
0
20
40
60
80
100
120
140
160
DISSIPATION LIMITED
s/b LIMITED
dT[%], Ic DERATING
TC[oC], CASE TEMPERATURE
©2003 Fairchild Semiconductor Corporation
KSB1151
Rev. B, May 2003
Typical Characteristics (Continued)
Figure 7. Power Derating
25 50 75 100 125 150 175
0
5
10
15
20
25
30
PC[W], POWER DIS SIPATION
TC[oC], CASE TEMPERATURE
Package Dimensions
KSB1151
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation Rev. B, May 2003
3.25 ±0.20
8.00 ±0.30
ø3.20 ±0.10
0.75 ±0.10
#1
0.75 ±0.10
2.28TYP
[2.28±0.20] 2.28TYP
[2.28±0.20]
1.60 ±0.10
11.00 ±0.20
3.90 ±0.10
14.20MAX
16.10 ±0.20
13.06 ±0.30
1.75 ±0.20
(0.50)
(1.00)
0.50 +0.10
–0.05
TO-126
©2003 Fairchild Semiconductor Corporation Rev. I2
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Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
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