HVC132
Silicon Epitaxial Planar Pin Diode for High Frequency Switching
ADE-208-429B (Z)
Rev. 2
Feb. 2000
Features
Low capacitance.(C=0.5pF max)
Low forward resistance. (rf=2.0 max)
Ultra small Flat Package (UFP) is suitable for surface mount design.
Ordering Information
Type No. Laser Mark Package Code
HVC132 P2 UFP
Outline
12
P2
Cathode mark
Mark
1. Cathode
2. Anode
HVC132
Rev.2, Feb. 2000, page 2 of 5
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Value Unit
Peak reverse voltage VRM 65 V
Reverse voltage VR60 V
Forward current IF100 mA
Power dissipation Pd150 mW
Junction temperature Tj 125 °C
Storage temperature Tstg -55 to +125 °C
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Reverse current IR——0.1µAV
R = 60V
Forward voltage VF——1.0V I
F = 10 mA
Capacitance C 0.5 pF VR = 1V, f = 1 MHz
Forward resistance rf——2.0IF = 10 mA, f = 100 MHz
HVC132
Rev.2, Feb. 2000, page 3 of 5
Main Characteristic
Fig.1 Forward current Vs. Forward voltage
Fig.3 Capacitance Vs. Reverse voltage Fig.4 Forward resistance Vs. Forward current
Fig.2 Reverse current Vs. Reverse voltage
Forward voltage V (V)
F
Forward current I (A)
F
Reverse voltage V (V)
R
Reverse current I (A)
R
0.1
10
100
10
1.0
1.0
f=1MHz
Reverse voltage V (V)
R
Capacitance C (pF)
10 10 10 10
10
10
10
2
-5 -4 -3 -2
10
3
-1
f=100MHz
Forward current I (A)
F
Forward resistance r ( )
f
10
1
0
0806040 100
10
-9
10
10
-7
10
-8
10
-10
10
-12
10
-13
-11
Ta= 75°C
Ta= -25°C
Ta= 25°C
0 0.2 0.4 0.6 0.8 1.0
10
10
-4
10
-6
10
-8
10
-10
10
-12
-2
Ta= 75°C
Ta= -25°C
Ta= 25°C
20
HVC132
Rev.2, Feb. 2000, page 4 of 5
Package Dimensions
Hitachi Code
JEDEC
EIAJ
Mass
UFP
Conforms
0.0016 g
Unit: mm
1.2 ± 0.10
1.6 ± 0.10
0.3 ± 0.05
0.8 ± 0.10
0.6 ± 0.10
0.13 ± 0.05
HVC132
Rev.2, Feb. 2000, page 5 of 5
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