NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTORS
ISSUE 1 MARCH 94
FEATURES
* 60 Volt VCEO
* Gain of 10K at IC=0.5 Amp
*P
tot=1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 60 V
Emitter-Base Voltage VEBO 10 V
Peak Pulse Current ICM 2A
Continuous Collector Current IC800 mA
Power Dissipation at Tamb
=25°C Ptot 1W
Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 80 V IC=10µA, IE=0
Collector-Emitter
Sustaining Voltage
VCEO(sus) 60 V IC=10mA, IB=0
Emitter-Base
Breakdown Voltage
V(BR)EBO 10 V IE=10µA, IC=0
Collector Cut-Off
Current
ICBO 100 nA VCB
=60V, IE=0
Emitter Cut-Off
Current
IEBO 100 nA VEB
=8V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat) 1.25 V IC=800mA, IB=8mA*
Base-Emitter
Turn-on Voltage
VBE(on) 1.8 V IC=800mA, VCE
=5V*
Static
Forward
Current
Transfer
Ratio
BCX38A hFE 500
1000
IC=100mA, VCE
=5V*
IC=500mA, VCE
=5V*
BCX38B 2000
4000
IC=100mA, VCE
=5V*
IC=500mA, VCE
=5V*
BCX38C 5000
10000
IC=100mA, VCE
=5V*
IC=500mA, VCE
=5V*
E-Line
TO92 Compatible
C
B
E
BCX38A/B/C
3-20
BCX38A/B/C
0.0001
50
150
100
Pulse Width (seconds)
10 10010.10.010.001
0
D=1 (D.C.)
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
0.001 0.01 0.1 1
0.8
0.2
1.0
TYPICAL CHARACTERISTICS
VCE(sat) v IC
IC - Collector Current (Amps)
V
CE(sat)
- (Volts)
IC - Collector Current (Amps)
VBE(sat) v IC
IC - Collector Current (Amps)
VBE(on) v IC
V
BE
- (Volts)
V
BE(sat)
- (Volts)
0.4
0.001 0.01 0.1 1
0
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
IC - Collector Current (Amps)
hFE v IC
h
FE
- Normalised Gain
10
1.0
0.5
2.0
1.5
VCE=5V
IC/IB=100
10
Safe Operating Ar ea
IC - Collector Current (Amps)
VCE - Collector Voltage (Volts)
1100010 100
0.01
0.1
1
10 Single Pulse Test at T amb=25°C
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.6
0.001 0.01 0.1 1 10
IC/IB=100
1.0
0.5
2.0
1.5
0.001 0.01 0.1 1 10
VCE=5V
-55°C
+25°C
+100°C
+175°C
-55°C
+25°C
+100°C
+175°C
-55°C
+25°C
+100°C
-55°C
+25°C
+100°C
+175°C
Maximum transient thermal im pe dance
Thermal Resistance (°C/W)
3-21
NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTORS
ISSUE 1 MARCH 94
FEATURES
* 60 Volt VCEO
* Gain of 10K at IC=0.5 Amp
*P
tot=1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 60 V
Emitter-Base Voltage VEBO 10 V
Peak Pulse Current ICM 2A
Continuous Collector Current IC800 mA
Power Dissipation at Tamb
=25°C Ptot 1W
Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 80 V IC=10µA, IE=0
Collector-Emitter
Sustaining Voltage
VCEO(sus) 60 V IC=10mA, IB=0
Emitter-Base
Breakdown Voltage
V(BR)EBO 10 V IE=10µA, IC=0
Collector Cut-Off
Current
ICBO 100 nA VCB
=60V, IE=0
Emitter Cut-Off
Current
IEBO 100 nA VEB
=8V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat) 1.25 V IC=800mA, IB=8mA*
Base-Emitter
Turn-on Voltage
VBE(on) 1.8 V IC=800mA, VCE
=5V*
Static
Forward
Current
Transfer
Ratio
BCX38A hFE 500
1000
IC=100mA, VCE
=5V*
IC=500mA, VCE
=5V*
BCX38B 2000
4000
IC=100mA, VCE
=5V*
IC=500mA, VCE
=5V*
BCX38C 5000
10000
IC=100mA, VCE
=5V*
IC=500mA, VCE
=5V*
E-Line
TO92 Compatible
C
B
E
BCX38A/B/C
3-20
BCX38A/B/C
0.0001
50
150
100
Pulse Width (seconds)
10 10010.10.010.001
0
D=1 (D.C.)
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
0.001 0.01 0.1 1
0.8
0.2
1.0
TYPICAL CHARACTERISTICS
VCE(sat) v IC
IC - Collector Current (Amps)
V
CE(sat)
- (Volts)
IC - Collector Current (Amps)
VBE(sat) v IC
IC - Collector Current (Amps)
VBE(on) v IC
V
BE
- (Volts)
V
BE(sat)
- (Volts)
0.4
0.001 0.01 0.1 1
0
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
IC - Collector Current (Amps)
hFE v IC
h
FE
- Normalised Gain
10
1.0
0.5
2.0
1.5
VCE=5V
IC/IB=100
10
Safe Operating Ar ea
IC - Collector Current (Amps)
VCE - Collector Voltage (Volts)
1100010 100
0.01
0.1
1
10 Single Pulse Test at T amb=25°C
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.6
0.001 0.01 0.1 1 10
IC/IB=100
1.0
0.5
2.0
1.5
0.001 0.01 0.1 1 10
VCE=5V
-55°C
+25°C
+100°C
+175°C
-55°C
+25°C
+100°C
+175°C
-55°C
+25°C
+100°C
-55°C
+25°C
+100°C
+175°C
Maximum transient thermal im pe dance
Thermal Resistance (°C/W)
3-21
BCX38A/B/C
VCE - Collector-Emitter Voltage - (V)
10 1001
Maximum Power Dissipation - (W)
0.8
0.6
0.4
0.2
1.0 RS≤10kΩ
RS=47kΩ
RS=1MΩ
RS= ∞
3-22
The maximum permissable operational
temperature can be obtained using the
equation:
T
amb
(
max
) =
Power (max ) −Power (actual )
0.0057 + 25° C
Tamb(max)
= Maximum operating ambient
temperature
Power (max) = Maximum power
dissipation figure, for a given VCE
and
source resistance (RS)
Power (actual) = Actual power dissipation
in users circuit
