● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
VN2110
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
High input impedance and high gain
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
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General Description
The Supertex VN2110 is an enhancement-mode (normally-
off) transistor that utilizes a vertical DMOS structure
and Supertex’s well-proven silicon-gate manufacturing
process. This combination produces a device with the
power handling capabilities of bipolar transistors, and the
high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Ordering Information
Device Package Options BVDSS/BVDGS
(V)
RDS(ON)
(max)
(Ω)
TO-236AB (SOT-23) Die*
VN2110 VN2110K1-G VN2110ND 100 4.0
Absolute Maximum Ratings
Parameter Value
Drain-to-source voltage BVDSS
Drain-to-gate voltage BVDGS
Gate-to-source voltage ±20V
Operating and storage temperature -55°C to +150°C
Soldering temperature* +300°C
Absolute Maximum Ratings are those values beyond which damage to
the device may occur. Functional operation under these conditions is not
implied. Continuous operation of the device at the absolute rating level
may affect device reliability. All voltages are referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.
Pin Configuration
N-Channel Enhancement-Mode
Vertical DMOS FETs
DRAIN
SOURCE
GATE
-G indicates package is RoHS compliant (‘Green’)
* MIL visual screening available.
Product Marking
N1AW W = Code for Week Sealed
= “Green” Packaging
TO-236AB (SOT-23) (K1)
TO-236AB (SOT-23) (K1)
Package may or may not include the following marks: Si or
2
VN2110
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
Electrical Characteristics (TA = 25°C unless otherwise specified)
Sym Parameter Min Typ Max Units Conditions
BVDSS Drain-to-source breakdown voltage 100 - - V VGS = 0V, ID = 1.0mA
VGS(th) Gate threshold voltage 0.8 - 2.4 V VGS = VDS, ID = 1.0mA
ΔVGS(th) Change in VGS(th) with temperature - -3.8 -5.5 mV/OC VGS = VDS, ID = 1.0mA
IGSS Gate body leakage current - 0.1 100 nA VGS = ±20V, VDS = 0V
IDSS Zero gate voltage drain current
- - 1.0
µA
VGS = 0V, VDS = Max Rating
- - 100 VDS = 0.8 Max Rating,
VGS = 0V, TA = 125OC
ID(ON) On-state drain current 0.6 - - A VGS = 10V, VDS = 25V
RDS(ON) Static drain-to-source on-state resistance - 4.5 6.0 ΩVGS = 5.0V, ID = 75mA
- 3.0 4.0 VGS = 10V, ID = 500mA
ΔRDS(ON) Change in RDS(ON) with temperature - 0.7 1.0 %/OC VGS = 10V, ID = 500mA
GFS Forward transconductance 150 400 - mmho VDS = 25V, ID = 500mA
CISS Input capacitance - 35 50
pF
VGS = 0V,
VDS = 25V,
f = 1.0MHz
COSS Common source output capacitance - 13 25
CRSS Reverse transfer capacitance - 4.0 5.0
td(ON) Turn-on delay time - 3.0 5.0
ns
VDD = 25V,
ID = 600mA,
RGEN = 25Ω
trRise time - 5.0 8.0
td(OFF) Turn-off delay time - 6.0 9.0
tfFall time - 5.0 8.0
VSD Diode forward voltage drop - 1.2 1.8 V VGS = 0V, ISD = 600mA
trr Reverse recovery time - 400 - ns VGS = 0V, ISD = 600mA
Notes:
All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
All A.C. parameters sample tested.
1.
2.
Switching Waveforms and Test Circuit
Thermal Characteristics
Package
ID
(continuous)†
(mA)
ID
(pulsed)
(mA)
Power Dissipation
@TA = 25OC
(W)
θjc
(OC/W)
θja
(OC/W)
IDR
†
(mA)
IDRM
(mA)
TO-236AB (SOT-23) 200 800 0.36 200 350 200 800
Notes:
† ID (continuous) is limited by max rated Tj .
90%
10%
90% 90%
10%
10%
PULSE
GENERATOR
VDD
RL
OUTPUT
D.U.T.
t(ON)
td(ON)
t(OFF)
td(OFF) tF
tr
INPUT
INPUT
OUTPUT
10V
V
DD
RGEN
0V
0V
3
VN2110
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
Typical Performance Curves
Output Characteristics
2.0
1.6
1.2
0.8
0.4
0
VDS (volts) VDS (volts)
ID)serepm
a
(
ID)serepm
a
(
Saturation Characteristics
Maximum Rated Safe Operating Area
0.1 100101
VDS (volts)
I)serepma(
D
Thermal Response Characteristics
)de
z
ila
m
ron
(
ecn
at
sis
e
R l
a
mr
eh
T
1.0
0.8
0.6
0.4
0.2
0
0.001 100.01 0.1 1.0
tp(seconds)
Transconductance vs. Drain Current
0.5
0.4
0.3
0.2
0.1
0
0 0.40.2
GS
F)sn
em
e
i
s(
ID(amperes)
Power Dissipation vs. Ambient Temperature
0 15010050
2.0
1.0
0
1257525
TA(°C)
PD)stt
a
w(
TA = -55°C
VDS = 25V
0 10 20 30 5040
4V
3V
0 2 4 6 108
25°C
125°C
VGS =
7V
9V
0.6 1.00.8
10V
8V
6V
5V
2.0
1.6
1.2
0.8
0.4
0
4V
3V
7V
9V
10V
8V
6V
5V
VGS =
TA = 25°C
TO-236AB
10
1.0
0.1
0.01
SOT-23 (pulsed)
SOT-23 (DC)
TO-236AB
P
D
= 0.36W
T
A
= 25°C
4
VN2110
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
Typical Performance Curves (cont.)
Gate Drive Dynamic Characteristics
QG(nanocoulombs)
VS
G)stlo
v
(
Tj (°C)
V)ht(S
G)dezilamro
n
(
R)
NO
(S
D)dez
i
lam
r
on(
VGS(th) and RDS(ON) Variation with Temperature
On-Resistance vs. Drain Current
R)
NO
(S
D)smho(
VB SS
D)
de
zi
l
amr
on
(
Tj (°C)
Transfer Characteristics
VGS (volts)
ID)serepm
a
(
Capacitance vs. Drain-to-Source Voltage
50
)s
da
raf
o
cip( C
VDS (volts)
ID (amperes)
BVDSS Variation with Temperature
0 10 20 30 40
25
0
0 2 4 6 8 10
2.0
1.6
1.2
0.8
0.4
0
-50 0 50 100 150
1.1
1.0
10
8
6
4
2
0
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0 0.2 0.4 0.6 0.8 1.0
-50 0 50 100 150
30 pF VDS = 40V
VDS = 10V
VGS = 5V
VGS = 10V
T
A
= -55°C
VDS = 25V
125°C
0 0.5 1.0 1.5 2.52.0
f = 1MHz
CISS
C
OSS
C
RSS
0.9
90 pF
2.0
1.6
1.2
0.8
0.4
0
VGS(th) @ 1mA
25°C
0
R
DS(ON)
@ 10V, 0.5A
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an
adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the
replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications
are subject to change without notice. For the latest product specifications refer to the Supertex inc. website: http//www.supertex.com.
©2008 All rights reserved. Unauthorized use or reproduction is prohibited.
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
5
VN2110
(The package drawing (s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Doc.# DSFP-VN2110
A122308
3-Lead TO-236AB (SOT-23) Package Outline (K1)
2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch
Symbol A A1 A2 b D E E1 e e1 L L1 θ
Dimension
(mm)
MIN 0.89 0.01 0.88 0.30 2.80 2.10 1.20 0.95
BSC
1.90
BSC
0.20†
0.54
REF
0O
NOM - - 0.95 - 2.90 - 1.30 0.50 -
MAX 1.12 0.10 1.02 0.50 3.04 2.64 1.40 0.60 8O
JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999.
† This dimension is a non-JEDEC dimension.
Drawings not to scale.
Supertex Doc.#: DSPD-3TO236ABK1, Version B072208.
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