Document Number: 93449 For technical questions, contact: diodes-tech@vishay.com www.vishay.com
Revision: 06-Nov-08 1
Schottky Rectifier, 3 A
MBR340
Vishay High Power Products
FEATURES
Low profile, axial leaded outline
Very low forward voltage drop
High frequency operation
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Guard ring for enhanced ruggedness and long term
reliability
Lead (Pb)-free plating
Designed and qualified for industrial level
DESCRIPTION
The MBR340 axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
PRODUCT SUMMARY
IF(AV) 3 A
VF at 3 A at 25 °C 0.6 V
IRM 20 mA at 125 °C
VR40 V
C-16
Cathode Anode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 3.0 A
VRRM 40 V
IFSM tp = 5 µs sine 430 A
VF3 Apk, TJ = 25 °C 0.6 V
TJ- 40 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL MBR340 UNITS
Maximum DC reverse voltage VR40 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 4 IF(AV) 50 % duty cycle at TC = 92 °C, rectangular waveform 3.0
A
Maximum peak one cycle
non-repetitive surge current
See fig. 6
IFSM
5 µs sine or 3 µs rect. pulse Following any rated load
condition and with rated
VRRM applied
430
10 ms sine or 6 ms rect. pulse 80
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1 A, L = 12 mH 6.0 mJ
Repetitive avalanche current IAR
Current decaying linearly to zero in 1 µs
Frequency limited by, TJ maximum VA = 1.5 x VR typical 1.0 A
www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 93449
2Revision: 06-Nov-08
MBR340
Vishay High Power Products Schottky Rectifier, 3 A
Note
(1) Pulse width < 300 µs, duty cycle < 2 %
Notes
(1) thermal runaway condition for a diode on its own heatsink
(2) Mounted 1" square PCB, thermal probe connected to lead 2 mm from package
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1 VFM (1)
1.0 A
TJ = 25 °C
0.5
V
3.0 A 0.6
9.4 A 0.85
1.0 A
TJ = 125 °C
0.37
3.0 A 0.49
9.4 A 0.72
Maximum reverse leakage current
See fig. 2 IRM (1)
TJ = 25 °C
VR = Rated VR
0.6
mATJ = 100 °C 8
TJ = 125 °C 20
Typical junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 190 pF
Typical series inductance LSMeasured lead to lead 5 mm from package body 9.0 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ (1), TStg - 40 to 150 °C
Maximum thermal resistance,
junction to lead RthJL (2) DC operation
See fig. 4 28 °C/W
Approximate weight 1.2 g
0.042 oz.
Marking device Case style C-16 MBR340
dPtot
dTJ
------------- 1
RthJA
--------------<
Document Number: 93449 For technical questions, contact: diodes-tech@vishay.com www.vishay.com
Revision: 06-Nov-08 3
MBR340
Schottky Rectifier, 3 A Vishay High Power Products
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Allowable Lead Temperature vs.
Average Forward Current
Fig. 5 - Forward Power Loss Characteristics
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Forward Voltage Drop - V FM (V)
Instantaneous Forward Current - I F (A)
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
Tj = 150 °C
Tj = 125 °C
Tj = 25 °C
0.001
0.01
0.1
1
10
100
010203040
25°C
T = 150 °C
J
125°C
Reverse Voltage - V R (V)
Reverse Current - I R (mA)
10
100
1000
0 40 80 120 160 200
T = 25 °C
J
Junction Capacitance - C T (pF)
Reverse Voltage - V R (V)
Average Forward Current - I F(AV) (A)
Allowable Lead Temperature (°C)
30
50
70
90
110
130
150
170
012345
DC
Square wave (D = 0.50)
80% Rated Vr applied
see note (1)
Average Power Loss (Watts)
Average Forward Current - I F(AV) (A)
0
0.5
1
1.5
2
2.5
012345
DC
RMS Limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 93449
4Revision: 06-Nov-08
MBR340
Vishay High Power Products Schottky Rectifier, 3 A
Fig. 6 - Maximum Non-Repetitive Surge Current
ORDERING INFORMATION TABLE
Square Wave Pulse Duration - t p(microsec)
Non-Repetitive Surge Current - I FSM (A)
10
100
1000
10 100 1000 10000
At Any Rated Load Condition
And With rated Vrrm Applied
Following Surge
1- Schottky MBR series
2- Current rating: 3 = 3 A
3- Voltage rating: 40 = 40 V
4- TR = Tape and reel package (5000 pcs)
None = Box package (500 pcs)
Device code
1324
MBR 3 40 TR
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95242
Part marking information http://www.vishay.com/doc?95304
Packaging information http://www.vishay.com/doc?95309
Document Number: 95242 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 20-Nov-08 1
Axial DO-201AD (C-16)
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
21.0 (0.83) MIN.
(2 places)
10.0 (0.39)
MAX.
Ø 5.8 (0.23)
MAX.
10.0 (0.39)
MAX.
Ø 5.8 (0.23)
MAX.
21.0 (0.83) MIN.
(2 places)
2.54 (0.100) MAX.
Flash (2 places)
Ø 1.40 (0.055)
Ø 1.20 (0.047)
(2 places)
Ø 1.40 (0.055)
Ø 1.20 (0.047)
(2 places)
Cathode band
Document Number: 91000 www.vishay.com
Revision: 11-Mar-11 1
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