VEMI85AA-HGK
www.vishay.com Vishay Semiconductors
Rev. 1.7, 03-Aug-12 1Document Number: 81386
For technical questions, contact: EMIFilter@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
8-Channel EMI-Filter with ESD-Protection
MARKING (example only)
Dot = pin 1 marking
Y = type code (see table below)
XX = date code
FEATURES
• Ultra compact LLP3313-17L package
• Low package profile of 0.6 mm
• 8-channel EMI-filter
• Low leakage current
• Line resistance RS = 100
• Typical cut off frequency f3dB = 100 MHz
• ESD-protection acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge
• e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
21840
20388
9
12345678
10
11
12
13
14
15
16
17
YYXX
20720
ORDERING INFORMATION
DEVICE NAME ORDERING CODE TAPED UNITS PER REEL
(8 mm TAPE ON 7" REEL) MINIMUM ORDER QUANTITY
VEMI85AA-HGK VEMI85AA-HGK-GS08 3000 15 000
PACKAGE DATA
DEVICE NAME PACKAGE
NAME
TYPE
CODE WEIGHT MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE
SENSITIVITY LEVEL
SOLDERING
CONDITIONS
VEMI85AA-HGK LLP3313-17L 9R 7.4 mg UL 94 V-0 MSL level 1
(according J-STD-020) 260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current All I/O pin to pin 17; acc. IEC 61000-4-5;
tp = 8/20 μs; single shot IPPM 4A
ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD
± 30 kV
Air discharge acc. IEC 61000-4-2; 10 pulses ± 30
Operating temperature Junction temperature TJ- 40 to + 125 °C
Storage temperature TSTG - 55 to + 150 °C
VEMI85AA-HGK
www.vishay.com Vishay Semiconductors
Rev. 1.7, 03-Aug-12 2Document Number: 81386
For technical questions, contact: EMIFilter@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
APPLICATION NOTE
With the VEMI85AA-HGK 8 different signal or data lines can be filtered and clamped to ground. Due to the different clamping
levels in forward and reverse direction the clamping behaviour is Bidirectional and Asymmetric (BiAs).
The 8 independent EMI-filter are placed between
pin 1 and pin 16,
pin 2 and pin 15,
pin 3 and pin 14,
pin 4 and pin 13,
pin 5 and pin 12,
pin 6 and pin 11,
pin 7 and pin 10 and
pin 8 and pin 9.
They all are connected to a common ground pin 17 on the backside of the package.
The circuit diagram of one EMI-filter-channel shows two identical Z-diodes at the input to ground and the output to ground.
These Z-diodes are characterized by the breakthrough voltage level (VBR) and the diode capacitance (CD). Below the
breakthrough voltage level the Z-diodes can be considered as capacitors. Together with these capacitors and the line
resistance RS between input and output the device works as a low pass filter. Low frequency signals (f < f3dB) pass the filter
while high frequency signals (f > f3dB) will be shorted to ground through the diode capacitances CD.
Each filter is symmetrical so that both ports can be used as input or output.
L1
IN
L1
OUT
L3
IN
L3
OUT
L2
IN
L2
OUT
L4
IN
L4
OUT
L5
IN
L5
OUT
L6
IN
L6
OUT
L7
IN
L7
OUT
L8
IN
L8
OUT
20389
1
2
3
4
17
5
6
7
89
10
11
12
13
14
15
16
R
S
Out
(
pin 9, 10, 11, 12, 13, 14, 15, 16)
In
(pin 1, 2, 3, 4, 5, 6, 7, 8)
GND
(pin 17)
C
D
20390
C
D
C
D
VEMI85AA-HGK
www.vishay.com Vishay Semiconductors
Rev. 1.7, 03-Aug-12 3Document Number: 81386
For technical questions, contact: EMIFilter@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 /150 pF)
Fig. 2 - 8/20 μs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
ELECTRICAL CHARACTERISTICS All inputs (pin 1, 2, 3, 4, 5, 6, 7, and 8) to ground (pin 17)
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of channels which can be protected Nchannel - - 8 channel
Reverse stand off voltage Max. reverse working voltage VRWM --5V
Reverse voltage at IR = 1 μA VR5--V
Reverse current at VR = VRWM IR--1μA
Reverse break down voltage at IR = 1 mA VBR 6--V
Pos. clamping voltage
at IPP = 1 A applied at the input, measured
at the output; acc. IEC 61000-4-5 VC-out --7V
at IPP = IPPM = 4 A applied at the input,
measured at the output; acc. IEC 61000-4-5 VC-out --8V
Neg. clamping voltage
at IPP = - 1 A applied at the input, measured
at the output; acc. IEC 61000-4-5 VC-out - 1 - - V
at IPP = IPPM = - 4 A applied at the input,
measured at the output; acc. IEC 61000-4-5 VC-out - 1.2 - - V
Input capacitance
at VR = 0 V; f = 1 MHz CIN -60-pF
at VR = 2.5 V; f = 1 MHz CIN -36-pF
ESD-clamping voltage at ± 30 kV ESD-pulse acc. IEC 61000-4-2 VCESD -7.5- V
Line resistance Measured between input and output;
IS = 10 mA RS90 100 110
Cut-off frequency VIN = 0 V; measured in a 50 system f3dB - 100 - MHz
0 %
20 %
40 %
60 %
80 %
100 %
120 %
- 10 0 10 20 30 40 50 60 70 80 90 100
Time (ns)
Discharge Current IESD
Rise time = 0.7 ns to 1 ns
53 %
27 %
20557
0 %
20 %
40 %
60 %
80 %
100 %
010203040
Time (µs)
I
PPM
20 µs to 50 %
8 µs to 100 %
20548
VEMI85AA-HGK
www.vishay.com Vishay Semiconductors
Rev. 1.7, 03-Aug-12 4Document Number: 81386
For technical questions, contact: EMIFilter@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Forward Current IF vs. Forward Voltage VF
Fig. 4 - Typical Reverse Voltage VR vs.
Reverse Current IR
Fig. 5 - Typical Peak Clamping Voltage VC vs.
Peak Pulse Current IPP
Fig. 6 - Typical Input Capacitance CIN vs. Input Voltage VIN
Fig. 7 - Typical Small Signal Transmission (S21)
at ZO = 50
0.5 0.6 0.7 0.8 0.9 1
0.001
0.01
0.1
1
10
100
VF (V)
IF (mA)
20705
0
1
2
3
4
5
6
7
8
0.01 0.1 1 10 100 1000 10 000
IR (µA)
VR (V)
20707
VC
0
10
20
30
40
50
60
70
0123456
20706
V
IN
(V)
C
IN
(pF)
f = 1 MHz
- 35
- 30
- 25
- 20
- 15
- 10
- 5
0
1 100 1000 10 000
Frequency (MHz)
Transmission (S21) (dB)
V
INPUT
= 5 V
20708
V
INPUT
= 0 V
V
INPUT
= 1 V
V
INPUT
= 2 V
Measured in a 50 Ω system
10
- 40
VEMI85AA-HGK
www.vishay.com Vishay Semiconductors
Rev. 1.7, 03-Aug-12 5Document Number: 81386
For technical questions, contact: EMIFilter@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters (inches): LLP3313-17L
20391
Document no.:S8-V-3906.04-003 (4)
3.35 (0.132)
3.25 (0.128)
Pin 1 marking
0.05 (0.002)
0 (0.000)
0.152 (0.006) ref.
2.8 (0.110) ref.
0.3 (0.012)
0.24 (0.009)
0.4 (0.016) bsc 0.23 (0.009)
0.17 (0.007)
2.65 (0.104)
2.55 (0.100) exp. DAP
0.6 (0.024)
0.5 (0.020)
1.4 (0.055)
1.3 (0.051)
0.45 (0.018)
0.35 (0.014)
exp. DAP
Solder
resist mask
Solder pad
0.4 (0.016) 0.2 (0.008)
7 x 0.4 = 2.8 (0.110)
2.6 (0.102)
0.4 (0.016)
0.15 (0.006)
0.4 (0.016)
0.2 (0.008) x 45°
0.42 (0.017)
Created - Date: 28. August 2006
Rev. 1 - Date: 27. May 2008
Foot print recommendation:
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www.vishay.com Vishay
Revision: 02-Oct-12 1Document Number: 91000
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