SEMICONDUCTOR BC337 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A High Current : IC=800mA. DC Current Gain : hFE=100630 (VCE=1V, Ic=100mA). For Complementary with PNP type BC327. N E K G J D MAXIMUM RATING (Ta=25) UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V Collector Current IC 800 mA Emitter Current IE -800 mA Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 Tstg -55150 Storage Temperature Range H F F 1 2 3 C RATING MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M SYMBOL L CHARACTERISTIC DIM A B C D E F G H J K L M N 1. COLLECTOR 2. BASE 3. EMITTER TO-92 ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT - - 100 nA Collector Cut-off Current ICBO VCB=45V, IE=0 DC Current Gain (Note) hFE VCE=1V, IC=100mA 100 - 630 Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA - - 0.7 V Base-Emitter Voltage VBE(ON) VCE=1V, IC=300mA - - 1.2 V Transition Frequency fT VCE=5V, IC=10mA, f=100MHz - 100 - MHz VCB=10V, f=1MHz, IE=0 - 16 - pF Cob Collector Output Capacitance Note : hFE Classification none:100630, 2000. 2. 28 16:100250, Revision No : 2 25:160400, 40:250630 1/2 BC337 3k 10 800 V CE 600 9 8 =1 V 7 6 5 400 4 DC CURRENT GAIN h FE 1k h FE - I C 3 2 I B =1mA 200 0 0 0.2 COMMON 0.4 Ta=25 C 1k 500 300 Ta=100 C Ta=25 C 100 Ta=-25 C 50 30 10 VCE =1V 1.0 0.8 1 0.4 0.2 0 10 20 30 COLLECTOR-EMITTER VOLTAGE VCE (V) 1200 COMMON EMITTER 1000 Ta=25 C 8 800 7 6 5 600 3 400 300 1k 0.3 100 Ta= Ta=25 C Ta=-25 C 0.1 0.03 Ta=100 C 0.01 1 3 10 0 2 3 4 5 6 COLLECTOR-EMITTER VOLTAGE V CE (V) 500 10 3 1 0.4 0.6 0.8 BASE-EMITTER VOLTAGE V BE (V) Revision No : 2 1.0 COLLECTOR POWER DISSIPATION P C (mW) C Ta= -25 =1 Ta Ta 00 C =2 5 C 300 30 1k 30 10 3 10 30 100 300 1k COLLECTOR CURRENT I C (mA) COMMON EMITTER VCE =1V 100 300 100 I C - V BE 1k 100 COMMON EMITTER Ta=25 C VCE =5V 300 1 5k 30 fT - I C I B =1mA 1 C COLLECTOR CURRENT I C (mA) 2 200 0.2 100 COMMON EMITTER I C/I B =25 1 4 0 30 VCE(sat) - I C 3 0 COLLECTOR CURRENT I C (mA) 10 40 I C - VCE (LOW VOLTAGE REGION) 2000. 2. 28 3 COLLECTOR CURRENT I C (mA) 0.6 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 0.8 BASE CURRENT I B (mA) COLLECTOR CURRENT IC (mA) COMMON EMITTER VCE =1V EMITTER 0.6 TRANSITION FREQUENCY f T (MHz) BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT I C (mA) STATIC CHARACTERISTICS P C - Ta 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 2/2