2000. 2. 28 1/2
SEMICONDUCTOR
TECHNICAL DATA
BC337
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
ᴌHigh Current : IC=800mA.
ᴌDC Current Gain : hFE=100ᴕ630 (VCE=1V, Ic=100mA).
ᴌFor Complementary with PNP type BC327.
MAXIMUM RATING (Ta=25ᴱ)
TO-92
DIM MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2 3
B
AJ
KG
H
FF
L
E
C
E
C
M
N
0.45 MAXM
1.00N
1. COLLECTOR
2. BASE
3. EMITTER
+
_
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC800 mA
Emitter Current IE-800 mA
Collector Power Dissipation PC625 mW
Junction Temperature Tj150 ᴱ
Storage Temperature Range Tstg -55ᴕ150 ᴱ
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=45V, IE=0 - - 100 nA
DC Current Gain (Note) hFE VCE=1V, IC=100mA 100 - 630
Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA - - 0.7 V
Base-Emitter Voltage VBE(ON) VCE=1V, IC=300mA - - 1.2 V
Transition Frequency fTVCE=5V, IC=10mA, f=100MHz - 100 - MHz
Collector Output Capacitance Cob VCB=10V, f=1MHz, IE=0 - 16 - pF
Note : hFE Classification none:100ᴕ630, 16:100ᴕ250, 25:160ᴕ400, 40:250ᴕ630
2000. 2. 28 2/2
BC337
Revision No : 2
C
COLLECTOR CURRENT I (mA)
0
P (mW)
0
C
0
AMBIENT TEMPERATURE Ta ( C)
C
P - Ta
10
DC CURRENT GAIN hFE
1k30031
COLLECTOR CURRENT I (mA)
C
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CEC
I - V (LOW VOLTAGE REGION)
h - I
1
COLLECTOR CURRENT I (mA)
C
0.2
BASE-EMITTER VOLTAGE V (V)
BE
I - V
STATIC CHARACTERISTICS
B
BASE CURRENT
0.8
1.0
I (mA)
C
V - I
C
COLLECTOR CURRENT I (mA)
1 3 300 1k
0.01
CE(sat)
COLLECTOR-EMITTER SATURATION
COLLECTOR CURRENTBASE-EMITTER
BE
VOLTAGE V (V)
I (mA) VOLTAGE V (V)
COLLECTOR-EMITTER
CE
0.6 0.4 0.2 0 10 20 30 40
0.8
0.6
0.4
0.2
0
200
400
600
800
1k
COMMON
EMITTER
Ta=25 C
9
876
54
3
2
I =1mA
0
B
V =1V
CE
CE
V =1V
123456
200
400
600
800
1000
1200
8
7
6
5
4
3
2
0
I =1mA
B
CBE
0.4 0.6 0.8 1.0
3
10
30
100
300
1k
5k
COMMON EMITTER
V =1V
CE
Ta=100 C
Ta=25 C
Ta=-25 C
FE C
1003010
30
100
300
1k
3k
50
500
COMMON EMITTER
V =1V
CE
Ta=100 C
Ta=25 C
Ta=-25 C
CE(sat) C
VOLTAGE V (V)
1003010
0.03
0.1
0.3
1
3COMMON EMITTER
I /I =25
CB
Ta=100 C
Ta=25 C
Ta=-25 C
CE
V =5V
COMMON EMITTER
500
100
30
10 30 100
TRANSITION FREQUENCY
C
T
T
10
1k30031
COLLECTOR CURRENT I (mA)
C
f - I
f (MHz)
300 Ta=25 C
COLLECTOR POWER DISSIPATION
25 50 75 100 125 150 175
100
200
300
400
500
600
700
10
COMMON EMITTER
Ta=25 C
Ta=100 C
