TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/301
T4-LDS-0010 Rev. 1 (072019) Page 1 of 2
DEVICES LEVELS
2N918 2N918UB JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Value Unit
Collector-Emitter Voltage VCEO 15 Vdc
Collector-Base Voltage VCBO 30 Vdc
Emitter-Base Voltage VEBO 3.0 Vdc
Collector Current IC 50 mAdc
Total Power Dissipation @ TA = +25°C (1) P
T 200 mW
Operating & Storage Junction Temperature Range Top & Tstg -65 to +200 °C
1) Derate linearly 1.14mW/°C above TA > 25°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 3mAdc V(BR)CEO 15 Vdc
Collector-Base Cutoff Current
VCB = 30Vdc
VCB = 25Vdc
ICBO
1.0
10
µAdc
ηAdc
Emitter-Base Cutoff Current
VEB = 3.0Vdc
VEB = 2.5Vdc
IEBO
10
10
µAdc
ηAdc
Forward-Current Transfer Ratio
IC = 0.5mAdc, VCE = 10Vdc
IC = 3.0mAdc, VCE = 10Vdc
IC = 10mAdc, VCE = 10Vdc
hFE
10
20
20
200
Collector-Emitter Saturation Voltage
IC = 10mAdc, IB = 1.0mAdc VCE(sat) 0.4 Vdc
Base-Emitter Voltage
IC = 10mAdc, IB = 1.0mAdc VBE(sat) 1.0 Vdc
TO-72
2N918
3 PIN
2N918UB
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/301
T4-LDS-0010 Rev. 1 (072019) Page 2 of 2
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Magnitude of Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 4mAdc, VCE = 10Vdc, f = 100MHz
|hfe| 6.0 18
Output Capacitance
VCB = 0Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz
VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz Cobo1
Cobo2
3.0
1.7
pF
Input Capacitance
VEB = 0.5Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz Cibo 1.7 pF
Noise Figure (1)
VCE = 6V, IC = 1.0mA, f = 60MHz
gs = 2.5mmho NF 6.0 dB
Small-Signal Power Gain (1)
VCB = 12V, IC = 6.0mA, f = 200MHz
Gpe 15
dB
Collector-Base Time Constant (1)
VCB = 10V, IE = -4.0mA, f = 79.8MHz Rb’CC 25 ps
Oscillator Power Output (1)
VCB = 1.5V, IC = 8.0mA, f ≥ 500MHz Po 30 mW
Collector Efficiency
VCB = 15V, IC = 8.0mA, f > 500MHz n 25 %
NOTES:
(1) For more detail see MIL-PRF-19500/301
