TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/301 DEVICES LEVELS 2N918 2N918UB JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 15 Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage VEBO 3.0 Vdc IC 50 mAdc PT 200 mW Top & Tstg -65 to +200 C Collector Current Total Power Dissipation @ TA = +25C (1) Operating & Storage Junction Temperature Range TO-72 1) Derate linearly 1.14mW/C above TA > 25C 2N918 ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Symbol Min. V(BR)CEO 15 Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 3mAdc Vdc Collector-Base Cutoff Current VCB = 30Vdc VCB = 25Vdc ICBO 1.0 10 Adc Adc Emitter-Base Cutoff Current VEB = 3.0Vdc VEB = 2.5Vdc IEBO 10 10 Adc Adc 3 PIN 2N918UB Forward-Current Transfer Ratio IC = 0.5mAdc, VCE = 10Vdc IC = 3.0mAdc, VCE = 10Vdc hFE IC = 10mAdc, VCE = 10Vdc 10 20 200 20 Collector-Emitter Saturation Voltage IC = 10mAdc, IB = 1.0mAdc VCE(sat) 0.4 Vdc Base-Emitter Voltage IC = 10mAdc, IB = 1.0mAdc VBE(sat) 1.0 Vdc T4-LDS-0010 Rev. 1 (072019) Page 1 of 2 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/301 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Magnitude of Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 4mAdc, VCE = 10Vdc, f = 100MHz Symbol Min. Max. |hfe| 6.0 18 Unit Output Capacitance VCB = 0Vdc, IE = 0, 100kHz f 1.0MHz Cobo1 3.0 VCB = 10Vdc, IE = 0, 100kHz f 1.0MHz Cobo2 1.7 Input Capacitance VEB = 0.5Vdc, IC = 0, 100kHz f 1.0MHz Cibo 1.7 pF NF 6.0 dB Noise Figure (1) VCE = 6V, IC = 1.0mA, f = 60MHz gs = 2.5mmho pF Small-Signal Power Gain (1) VCB = 12V, IC = 6.0mA, f = 200MHz Gpe Collector-Base Time Constant (1) VCB = 10V, IE = -4.0mA, f = 79.8MHz Rb'CC Oscillator Power Output (1) VCB = 1.5V, IC = 8.0mA, f 500MHz Po 30 mW Collector Efficiency VCB = 15V, IC = 8.0mA, f > 500MHz n 25 % 15 dB 25 ps NOTES: (1) For more detail see MIL-PRF-19500/301 T4-LDS-0010 Rev. 1 (072019) Page 2 of 2