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01/28/11
Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
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Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.28mH, RG = 50Ω, IAS = 15A.
Notes:
IRF6811SPbF
IRF6811STRPbF
DirectFET®plus Power MOSFET
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
Typical values (unless otherwise specified)
SQ SX ST MQ MX MT MP
Description
The IRF6811STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve
improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET® package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6811STRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in
switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6811STRPbF has been optimized for the control FET socket of synchronous buck
operating from 12 volt bus converters.
l RoHS Compliant and Halogen Free
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
l Optimized for High Frequency Switching
l Ideal for CPU Core DC-DC Converters
l Optimized for Control FET Application
l Compatible with existing Surface Mount Techniques
l 100% Rg tested
l Footprint compatible to DirectFET
ISOMETRIC
SQ
0 5 10 15 20 25 30
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VGS, Gate-to-Source Voltage (V)
VDS= 20V
VDS= 13V
VDS= 5.0V
ID= 15A
V
DSS
V
GS
R
DS(on)
R
DS(on)
25V max ±16V max 2.8mΩ @ 10V 4.1mΩ @ 4.5V
Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
11nC 4.2nC 1.4nC 23nC 11nC 1.6V
Absolute Maximum Ratin
s
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V
e
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V
e
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
f
I
DM
Pulsed Drain Current
g
E
AS
Single Pulse Avalanche Energy
h
mJ
I
AR
Avalanche Current
g
A
Max.
15
74
150
±16
25
19
32
15
V
A
012345678910 11 12 13 14 15 16
VGS, Gate -to -Source Voltage (V)
0
2
4
6
8
10
12
Typical RDS(on) (mΩ)
ID = 19A
TJ = 25°C
TJ = 125°C
PD-97634
D
G
DS